73results about How to "Improve removal rate" patented technology

The invention discloses a spherical nano aluminum oxide polishing solution for silicon carbide wafer polishing, and relates to the technical field of preparation of semiconductor silicon carbide wafer polishing materials, and the spherical nano aluminum oxide polishing solution comprises the following raw materials by weight: 0.5-55% of aluminum oxide, 0.05-25% of an oxidant, 0.1-10% of an inhibitor, 0.01-12% of a surfactant, 0.01-15% of a dispersant, 0.1-10% of a pH regulator, and the balance of high purity water. The preparation process comprises the following steps: (1) preparing materials; (2) grinding material pretreatment; (3) mixing; (4) adjusting the pH value; and (5) high-pressure homogenization. The CMP polishing solution has the characteristics of high removal rate, good suspension dispersion performance, no damage to the surface of the silicon carbide wafer, extremely low surface roughness value, long cycle service life, easiness in cleaning, good universality and the like, and is suitable for CMP polishing of semiconductor silicon carbide wafers.

The invention provides a modified epoxy-cerium oxide polishing solution and a preparation method thereof, and the modified epoxy-cerium oxide polishing solution is mainly prepared from the following raw materials by mass: 0.2-0.5% of a modified cerium oxide abrasive; 0.02%-0.35% of a stabilizer; 0.25%-0.4% of ammonia water; 99.08%-99.2% of deionized water; wherein the modified cerium oxide abrasive is formed by mixing cerium oxide and epoxy carboxylic acid according to the mass ratio of (20: 1)-(200: 1). According to the epoxy-cerium oxide polishing solution, a grinding material can be more uniformly dispersed in the solution, so that the uniformity of suspension liquid is improved; and under the condition of ensuring the removal rate, the suspension property (D50) of the compound can be kept for 2 months.

The invention provides a phosphonic acid ligand modified cerium oxide polishing solution and a preparation method thereof. The polishing solution is mainly prepared by mixing water and phosphonic acid ligand modified cerium oxide according to a mass ratio of (94: 5)-(92: 7). According to the polishing solution, through modification of the phosphoric acid ligand, the chemical and physical properties of the cerium oxide abrasive are optimized, and the reactivity and the removal rate in the chemical mechanical polishing process can be improved, so that the polishing efficiency is effectively improved; a stable surface modification layer is formed through interaction with the surfaces of cerium oxide particles, so that the aggregation tendency among the particles is reduced, the grinding material can be more uniformly dispersed in a solution, and the uniformity of suspension liquid is improved; hydrophilic groups are arranged on the surface, so that the solubility of the particles in a solution is improved, and the settling velocity of the particles is reduced, thereby prolonging the stabilization time of a suspension.

The invention provides an electrochemical mechanical polishing device and wafer processing equipment comprising the same. The electrochemical mechanical polishing device comprises a polishing head and a polishing pad, the electrochemical mechanical polishing device further comprises an electrochemical workstation and an electrolyte supply assembly, an anode of the electrochemical workstation is connected with a gas film at the polishing head, a cathode of the electrochemical workstation is connected with a polishing disc, and a reference electrode is connected with a reference electrode measuring head at the polishing disc. According to the invention, the semiconductor surface polishing removal rate can be improved through electrochemical reaction, and the consumption of consumables is reduced.

The invention discloses a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises the following components in percentage by mass: 0.8%-10% of grinding particles, 0.001%-0.5% of an accelerating agent, 0.001%-0.5% of an acylamino Gemini quaternary ammonium salt cationic surfactant, 0.001%-1% of a cyclic oligosaccharide compound and the balance of water. The invention also discloses a preparation method and application of the chemical mechanical polishing solution. The chemical mechanical polishing solution can adjust the selection ratio of polycrystalline silicon to silicon dioxide, and avoids or reduces the generation of defects such as recesses, scratches and the like in the polishing process.

The invention discloses a stably suspended water-based diamond grinding fluid and a preparation method thereof. The grinding fluid comprises the following components in percentage by mass: 0.4-0.8% of diamond micro powder, 1-5% of a Gemini type polyether quaternary ammonium salt surfactant, 0.1-2% of a pH regulator, 1-6% of a suspending agent, 0.01-0.2% of a preservative, 20-60% of a solvent and 10-40% of deionized water, and the sum of the mass percentages is 100%. The water-based diamond grinding fluid is high in grinding rate, small in TTV and high in grinding material dispersion stability, has the advantage of being not prone to sedimentation compared with a traditional water-based diamond grinding fluid, is safer, more environmentally friendly and easy to clean compared with an oily grinding fluid, and can avoid quality and potential safety hazards caused by temperature rise due to long-time operation.

The invention discloses a novel alkaline copper CMP polishing solution and a preparation method thereof, and relates to the technical field of polishing solutions, the novel alkaline copper CMP polishing solution comprises a grinding material, a pH regulator, a complexing agent, an oxidizing agent, a composite inhibitor, a lubricant and deionized water, the grinding material is SiO2, the pH regulator is a potassium hydroxide solution, the composite inhibitor comprises dodecylbenzene sulfonic acid and 2-aminobenzimidazole, and the lubricant is a potassium hydroxide solution. The lubricant comprises a multi-walled carbon nanotube; according to the polishing solution, the removal rate can be effectively regulated and controlled, and the surface quality can be greatly improved; according to the polishing solution, the MWCNTs are added to serve as a lubricating agent, and scratches of abrasive materials to the copper surface are effectively reduced; the polishing solution is an alkaline polishing solution and is friendly to equipment and operators; inhibitors DBSA and 2-ABI used in the polishing solution are non-toxic and harmless and easy to dissolve in water, a layer of compact passive film can be attached to the copper surface, and corrosion of the polishing solution to the copper surface is effectively prevented.

The invention provides a modified epoxy-cerium oxide polishing liquid and a preparation method thereof, which is mainly prepared from the following raw materials by mass percentage: 0.2%-0.5% of modified cerium oxide abrasive; 0.02%-0.35% of stabilizer; 0.25%-0.4% of ammonia water; 99.08%-99.2% of deionized water; wherein the modified cerium oxide abrasive is cerium oxide and epoxy carboxylic acid mixed in a mass ratio of (20:1)-(200:1). The epoxy-cerium oxide polishing liquid can make the abrasive more evenly dispersed in the solution, improve the uniformity of the suspension; and maintain its suspension (D50) for up to 2 months under the condition of ensuring the removal rate.

The invention discloses a conductive aeration membrane cathode electro-Fenton sewage treatment device and method based on iron circulation and application. The invention belongs to the technical field of electro-Fenton sewage treatment. The invention aims to solve the technical problems of low O2 utilization rate, poor ferrous cyclic regeneration performance and poor selective degradation effect in the current electro-Fenton complex water treatment technology. The nano confinement conductive gas diffusion film is composed of a base film and an active layer, wherein the active layer is composed of fractured CNT and internal BN. An aeration membrane assembly is arranged in the reaction chamber of the device, and the surface, adjacent to the anode, of the assembly is composed of the gas diffusion membrane. By means of the design, oxygen directly makes contact with the catalyst layer through the gas diffusion film and is consumed immediately, and mass transfer resistance generated by water when the oxygen is diffused to the catalyst layer is avoided while 100% utilization of the oxygen is achieved. The nanometer confinement conductive aeration membrane cathode is high in ferrous cyclic regeneration capacity and has a good treatment effect in actual nanofiltration concentrated water, and selective degradation of ECs is achieved.

The invention relates to the technical field of chemical mechanical polishing, in particular to a polishing solution and a preparation method thereof, and the polishing solution comprises the following components by weight: 600-850 parts of silica sol; 2-6 parts of a metal chelating agent; 3-7 parts of a pH regulator; 0.01 to 0.10 part of a surfactant; 1-10 parts of organic amine; 125 to 380 parts of deionized water; the surfactant is selected from at least one of fatty alcohol ether phosphate, fatty alcohol-polyoxyethylene ether, alkylphenol polyoxyethylene ether and nonylphenol polyoxyethylene ether. According to the polishing solution provided by the invention, through the synergistic effect of the surfactant and other components in the polishing solution, not only is the removal rate improved, but also a corrosion inhibition protection layer can be formed on the surface of a silicon wafer, and chemical corrosion generated on the surface of the silicon wafer due to too strong chemical action is reduced, so that the surface of the silicon wafer is prevented from being damaged; therefore, the polishing quality is improved while the removal rate is increased.

The invention discloses a continuous and high-repetition-frequency nanosecond pulse laser pore-forming method, which comprises the following steps of: focusing laser on the surface of a metal material in a low-pressure environment, and continuously adding high-repetition-frequency nanosecond pulse laser in a continuous laser irradiation process so as to increase the removal rate of the material. Compared with an existing continuous laser drilling technology, the continuous laser drilling method has higher machining efficiency, the area of a recast layer can be reduced by 50% or above, and the continuous laser drilling method can be used for machining thicker metal plates.

The invention provides a preparation method and application of a dopamine hydrochloride modified cerium oxide core-shell abrasive, comprising the following steps: adding water to a cerium salt until the cerium salt is completely dissolved, taking out a silica powder with a mass ratio of cerium salt to silica powder of (0.5:1)-(7:1), ultrasonically dispersing the powder in anhydrous ethanol to obtain a dispersion; mixing the dispersion with a hexamethylenetetramine aqueous solution and a cerium salt aqueous solution, heating and stirring the dispersion in an oil bath to obtain a mixed solution, centrifuging the mixed solution, washing with deionized water and anhydrous ethanol, and drying the mixed solution to obtain a mixed solid, calcining the mixed solid to obtain a cerium precursor; dispersing the cerium precursor in a mixed solution obtained by deionized water and ethanol, slowly adding dopamine hydrochloride and a buffer solution, stirring the solution, centrifuging, washing, and drying the solution to obtain a cerium precursor; and preparing a polishing liquid using the abrasive to obtain a removal rate of 0.1458 mg / min.

The invention relates to the technical field of chemical mechanical polishing, in particular to a polishing solution for improving edge roughness, which comprises the following components in parts by weight: 10-80 parts of sol-type silicon dioxide; 0.05 to 8 parts of a rate accelerator; 0.01 to 0.5 part of a surfactant; 0.04 to 0.45 part of a pH (Potential of Hydrogen) regulator; 15 to 25 parts of water; the rate accelerator is selected from at least one of alkali metal hydroxide, alkali metal carbonate, quaternary ammonium hydroxide and amine. By introducing the rate accelerator, the invention provides the chemical mechanical polishing solution which is high in alkali content, high in silicon removal rate and capable of protecting edges from being stained; and meanwhile, by introducing the rate accelerator, a relatively high silicon removal rate is obtained, so that the use amount of the grinding material in the polishing solution is reduced, and the cost is reduced.

The application discloses a colloidal cerium oxide polishing liquid and a preparation method thereof, and steps are as follows: S1. Dissolving a soluble cerium salt in deionized water, and respectively dissolving a surfactant, a suspension aid and an imidazole modifier in the deionized water and stirring and clarifying, mixing all the solutions, and performing ultrasonic stirring and high-pressure homogenizer circulation treatment to prepare a modified reaction precursor; S2. Continuously stirring the precursor, adding a precipitant at a uniform speed, and stirring after aging by heating to form a colloidal cerium oxide nanosphere solution with a nanosphere appearance; S3. Centrifuging the solution, washing and freeze-drying the solid to obtain a cerium oxide powder, mixing and stirring the powder and deionized water to disperse, and preparing the colloidal cerium oxide polishing liquid. The polishing liquid has uniform particle size, stable dispersion, a high SiO2 / Si3N4 selection ratio, can reduce wafer scratches, guarantee stable polishing performance, and is suitable for the chemical mechanical polishing demand of a semiconductor wafer shallow trench isolation process.

The invention provides a Fe / Cu-BTC-BA catalyst as well as a preparation method and application thereof, and relates to the technical field of metal organic framework materials. The preparation method comprises the following steps: mixing an iron source, a copper source, trimesic acid, benzoic acid and hexadecyl trimethyl ammonium bromide with a solvent, carrying out solvothermal reaction at 120-140 DEG C for 20-28 hours, and filtering, washing and drying to obtain the target catalyst. Fe-Cu double active sites are constructed and are combined with double ligands to induce Cu < 2 + > to be converted into Cu < + >, so that the Lewis acidity and hydrogen sulfide adsorption activation capability are enhanced, the skeleton stability is improved, and meanwhile, the pore structure is optimized. The catalyst has the advantages of high specific surface area, highest sulfur capacity of 7.8%, high desulfurization rate and stable structure, and is suitable for catalytic desulfurization of sulfur-containing gas.

This invention aims to provide a chemical mechanical polishing (CMP) slurry for polyimide (PI) materials. The CMP slurry uses alumina abrasive, and by adjusting the pH, it can achieve a high PI removal rate while simultaneously reducing the surface roughness of the PI after polishing.

The utility model relates to the technical field of casting head separation, in particular to a separation device for a top casting head of a casting part, which comprises a separator and a first tool or a second tool matched with the separator for use, the casting part is placed on the inner side of the first tool and is pressed by the first tool, and the separator is used for separating the top casting head of the casting part. Or the pouring piece is arranged in the second tool and is fixed through the fastening piece; the separator comprises an overturning arm, an auxiliary supporting frame, a hydraulic cylinder and a pair of clamps, the overturning arm is arranged on one side of the clamps through a connecting frame, the auxiliary supporting frame is rotatably connected with the fixed end of the hydraulic cylinder through a rotating shaft, the hydraulic cylinder controls the pair of clamps to be opened or closed through a hydraulic system so as to clamp a pouring dead head of a pouring part, and the hydraulic cylinder is connected with the rotating shaft. And the overturning arm is overturned to pull away from the casting riser of the casting piece. According to the device disclosed by the utility model, the casting riser of the casting piece is pulled away by matching the separator with the first tool or the second tool, so that the defect that the riser is easily knocked by a sledge hammer is effectively overcome.

The invention relates to the technical field of polyurethane polishing pads, in particular to a preparation method of a polyurethane polishing pad and the polyurethane polishing pad, the preparation method comprises the steps that first coating slurry is prepared, the first coating slurry comprises resin slurry, modified jute fiber powder and DMF, and the particle size of the modified jute fiber powder is 30-40 microns; second coating slurry is prepared, the second coating slurry comprises resin slurry, superfine wool powder and DMF, and the particle size of the superfine wool powder is 20-25 microns; the first coating slurry and the second coating slurry are sequentially and evenly coated on the base cloth, and the coating thickness of the first coating slurry accounts for 0.2-0.25 of the total coating thickness; and curing and treating to obtain the polyurethane polishing pad. The method has the effects of improving the polishing effect of the polishing pad and reducing the influence on the function of the semiconductor.

The application discloses a polishing head with master-slave partition cooperative pressurization and application thereof in wafer polishing, and belongs to the technical field of polishing heads. The polishing head comprises a connecting module, a retaining ring flexible pressurization module and a master-slave partition cooperative pressurization module. The connecting module is connected with a main shaft of a host computer, and is internally provided with a plurality of gas channels, so that stable transmission of a plurality of gases can be realized. The retaining ring flexible pressurization module is driven by a ring-shaped air bag to deform, so as to pressurize the retaining ring and ensure that the retaining ring is closely attached to a polishing pad, thereby avoiding wafer slip during polishing. The master-slave partition cooperative pressurization module comprises a physically isolated master partition and a plurality of slave partitions. The master partition has a large pressurization capacity and can control the overall material removal rate of the wafer through large pressure. The slave partitions can finely control the surface topography of the wafer through small pressure, so that high material removal rate and high flatness polishing of the wafer are comprehensively realized. In addition, the module adopts a wedge-shaped guide mechanism, so that the tolerance of the polishing head to wafer thickness difference is improved, and the safety of the polishing process is enhanced.

Various embodiments disclosed relate to shaped abrasive particles having sharp tips, methods of making shaped abrasive particles, methods of grinding a substrate with shaped abrasive particles, and coated abrasive articles including shaped abrasive particles. The shaped abrasive particle includes a ceramic having a polygonal cross-sectional shape along a longitudinal axis of the shaped abrasive particle, and at least one tip of the shaped abrasive particle has a radius of curvature less than or equal to about 19.2 microns.

The present disclosure relates to a kind of iron-based amorphous alloy and its preparation method and the application of degrading tetracycline antibiotics, the molecular formula of iron-based amorphous alloy is FexSiyBz, wherein x, y, z respectively represent the atomic percentage of Fe, Si, B in alloy, 74≤x≤84, 6≤y≤16, 6≤z≤16, and x+y+z=100;Preparation method includes: S1, raw material is proportioned in smelting furnace under inert atmosphere and is smelted to prepare iron-based amorphous alloy;S2, the iron-based amorphous alloy prepared in step S1 is prepared into iron-based amorphous alloy strip by single-roll casting method;The application of degrading tetracycline antibiotics is that the iron-based amorphous alloy is applied to the treatment of wastewater containing tetracycline antibiotics, for degrading tetracycline antibiotics;The present application is more difficult to occur passivation in degradation reaction, and it is convenient to recycle.

The present invention is a recyclable silicon wafer chemical mechanical polishing liquid, comprising silica sol abrasive, surfactant, deionized water, pH regulator A, and pH regulator B, wherein the components are respectively as follows by mass percentage: silica sol abrasive: 15-25%; pH regulator A: 1%-3%, which is a quaternary ammonium base; pH regulator B: 5%-15%, which is one or more of primary amine base, secondary amine base, and tertiary amine base; surfactant: 0.01%-0.1%, which is a nonionic surfactant; and the balance is deionized water. The removal rate of the polishing liquid is above 0.9 μm / min, and the removal rate after eight cycles is still above 0.8 μm / min, and the attenuation rate is controlled within 8%, which can be recycled multiple times under the premise of high removal rate.

A tungsten chemical mechanical polishing solution includes abrasive particles, a catalyst, a stabilizer, an oxidizer, a corrosion inhibitor, and a substituted pinacol borate, with the balance being water. The substituted pinacol borate used in the tungsten chemical mechanical polishing solution of the present invention increases the stability of the polishing solution and improves the removal rate.

The invention discloses a device and a method for preparing a solid-state battery cell material through magnetothermal evaporation and magnetic deposition, and the method specifically comprises the following steps: taking a roll of polymeric membrane to be unfolded as a substrate, and forming an aluminum metal current collector I on one side of the polymeric membrane through evaporation and deposition; an aluminum metal current collector II is formed on the other side of the polymeric membrane, and the surface of the aluminum metal current collector I is sequentially coated with a positive electrode material layer, an electrolyte layer and a negative electrode material layer; and taking another roll of polymeric membrane as a substrate after being unfolded, forming a copper metal current collector I on one side of the polymeric membrane through evaporation deposition, forming a copper metal current collector II on the other side of the polymeric membrane, and carrying out calendering compounding on the polymeric membrane attached with the negative electrode material layer and the polymeric membrane on the side of the copper metal current collector I to obtain the lithium ion battery negative electrode material. The problems of high production cost, low production efficiency and low drying efficiency in the preparation process of an existing solid-state battery cell material are solved.

The invention provides a green chemical mechanical polishing composition and a preparation method thereof, the polishing composition comprises, by mass, 0.1-5% of grinding particles, 0.01-3% of an oxidizing agent, 0.01-5% of a complexing agent and the balance water, and the complexing agent is maltol and / or ethyl maltol. In order to solve the technical problems that cobalt is large in hardness and difficult to remove, and especially the polishing rate is low in an alkaline environment, the maltol and / or ethyl maltol complexing agent is adopted to be matched with grinding particles and an oxidizing agent, the removal rate of the cobalt interconnection layer is remarkably increased, and better surface quality is obtained; and meanwhile, the used additive is green and environment-friendly, and conforms to the concept of green manufacturing.

The intelligent grapefruit seed removing device comprises a conveying mechanism, a support, a peeling mechanism and a seed removing mechanism, the peeling mechanism and the seed removing mechanism are each provided with two parts, one part is arranged at the top of the conveying mechanism through the support, and the other part is arranged in the conveying mechanism; a mechanical arm is arranged on one side of the feeding end of the conveying mechanism. An image recognition module is arranged at the feeding end of the conveying mechanism. The conveying mechanism, the peeling mechanism and the seed removing mechanism are combined, so that the seed removing work of Majia pomelos can be completed on one line without other treatment, and compared with traditional manual seed removing, the seed removing efficiency of the Majia pomelos is greatly improved; the posture of the Majia pomelo can be recognized through the arranged image recognition module, the posture of the Majia pomelo is corrected to be in a vertical state through the mechanical arm, and it is guaranteed that when the Majia pomelo subsequently enters the peeling mechanism and the seed removing mechanism for peeling and seed removing, incomplete peeling and seed removing cannot be caused due to the skew posture problem.

This invention provides a cerium oxide-based polishing slurry for STI structures. The slurry comprises, by total mass, 0.05 wt%–5 wt% nano-cerium dioxide abrasive, 0.02 wt%–0.2 wt% hydroquinone, 0.05 wt%–0.25 wt% pyridinecarboxylic acid, 0.01 wt%–0.5 wt% D-sorbitol, and 0.001 wt%–0.01 wt% 1,2-benzisothiazolin-3-one, with a pH of 3–5. The cerium oxide-based polishing slurry provided by this invention, by adding a reducing agent to gently fine-tune the CeO2 surface activity to increase the Ce3+ content, promotes the removal rate of TEOS. Through the synergistic effect of other inhibitors and passivators, a high TEOS:Si3N4 selectivity ratio is obtained. Inhibiting the removal rate of Si3N4 indirectly avoids excessive grinding of oxides in the trenches, resulting in better wafer surface planarization efficiency.

This invention discloses a method for preparing a spatially confined copper-based catalyst for activating persulfate degradation of organic pollutants in water: (1) Dissolve nano-oxide materials and carbon sources in a solvent, stir thoroughly, centrifuge, dry, and then calcine the resulting powder at high temperature. After cooling, etch with an etching solution, centrifuge, and dry to obtain spatially confined carbon spheres; (2) Disperse the spatially confined carbon spheres obtained in step (1) with copper salt and precipitant in water, centrifuge, dry, and then calcine the resulting powder at high temperature. After cooling, the spatially confined copper-based catalyst is obtained. This invention also includes the spatially confined copper-based catalyst prepared by the above method and its application in activating persulfate degradation of organic pollutants in water. By constructing a carbon sphere-CuO heterostructure catalytic structure with spatial confinement effect, the synergistic effect of spatial confinement, interfacial electronic coupling, and active sites is fully utilized, achieving multiple synergistic regulation of pollutant enrichment, rapid electron transport, and selective activation of persulfate. Compared with traditional copper-based catalytic systems, this invention can effectively regulate the generation pathway of reactive oxygen species, significantly improve the utilization efficiency of persulfate and the selectivity of pollutant degradation, and significantly enhance the stability, anti-interference ability and recycling performance of the catalyst. It can be widely used in the deep purification of recalcitrant organic pollutants such as pesticides, antibiotics, and phenols, as well as in the treatment of complex wastewater.

The invention relates to the related technical field of integrated circuit multi-layer wiring processes, and discloses a method for improving the integrated circuit multi-layer wiring ruthenium CMP rate, and the method comprises the steps: preparing a polishing solution containing nitrilotriacetic acid triammonium salt; and polishing the ruthenium barrier layer pattern sheet of the integrated circuit below 14nm by using the polishing solution. In the application of a large-scale integrated circuit, NTA (NH4) 3 can react with ruthenium oxide (but nonmetal ruthenium) on the ruthenium surface to generate a large number of complexes through the triple synergistic effect of NTA (NH4) 3, the oxidizing agent and the silica sol, the dissolving corrosion capacity on ruthenium and the ruthenium oxide is enhanced, meanwhile, the ruthenium and the ruthenium oxide are rapidly removed along with the mechanical effect, and therefore the ruthenium CMP removal efficiency is higher. According to the efficient removal synergistic effect method for Ru, the high removal rate and low surface defect of Ru can be taken into account, the CMP performance of the Ru barrier layer is remarkably improved, and therefore the performance of an integrated circuit is enhanced.

The invention discloses a preparation method and a use method of sulfate reducing bacteria modified nanoscale zero-valent iron, and particularly relates to the field of water environment pollution remediation. Comprising a preparation method of the sulfate reducing bacteria modified nanoscale zero-valent iron, and a method for removing sulfamethoxazole (SMX) in a water body by using the sulfate reducing bacteria modified nanoscale zero-valent iron and the sulfate reducing bacteria modified nanoscale zero-valent iron. Compared with physical and chemical sulfur modified nZVI preparation methods, the preparation method disclosed by the invention is more environment-friendly and free of energy, ball-milling wastes or chemical agent wastes are remained, and the raw material source of the process is stable; the SRB-nZVI modified nano zero-valent iron material (SRB-nZVI) has the advantages that SMX can be more efficiently and quickly removed by the aid of the prepared SRB-nZVI modified nano zero-valent iron material as compared with single action of nZVI or SRB (sulfate reducing bacteria) liquid, the SRB-nZVI modified nano zero-valent iron material has the advantages that the SRB-nZVI modified nano zero-valent iron material can be obviously improved in removal rate and removal rate in 7 h as compared with single removal of SMX by the nZVI, the removal rate in 7 h can reach 75%, and the final removal rate can reach 93% or above.