8results about How to "Improve removal rate" patented technology

The application discloses a colloidal cerium oxide polishing liquid and a preparation method thereof, and steps are as follows: S1. Dissolving a soluble cerium salt in deionized water, and respectively dissolving a surfactant, a suspension aid and an imidazole modifier in the deionized water and stirring and clarifying, mixing all the solutions, and performing ultrasonic stirring and high-pressure homogenizer circulation treatment to prepare a modified reaction precursor; S2. Continuously stirring the precursor, adding a precipitant at a uniform speed, and stirring after aging by heating to form a colloidal cerium oxide nanosphere solution with a nanosphere appearance; S3. Centrifuging the solution, washing and freeze-drying the solid to obtain a cerium oxide powder, mixing and stirring the powder and deionized water to disperse, and preparing the colloidal cerium oxide polishing liquid. The polishing liquid has uniform particle size, stable dispersion, a high SiO2 / Si3N4 selection ratio, can reduce wafer scratches, guarantee stable polishing performance, and is suitable for the chemical mechanical polishing demand of a semiconductor wafer shallow trench isolation process.

This invention aims to provide a chemical mechanical polishing (CMP) slurry for polyimide (PI) materials. The CMP slurry uses alumina abrasive, and by adjusting the pH, it can achieve a high PI removal rate while simultaneously reducing the surface roughness of the PI after polishing.

This invention provides a cerium oxide-based polishing slurry for STI structures. The slurry comprises, by total mass, 0.05 wt%–5 wt% nano-cerium dioxide abrasive, 0.02 wt%–0.2 wt% hydroquinone, 0.05 wt%–0.25 wt% pyridinecarboxylic acid, 0.01 wt%–0.5 wt% D-sorbitol, and 0.001 wt%–0.01 wt% 1,2-benzisothiazolin-3-one, with a pH of 3–5. The cerium oxide-based polishing slurry provided by this invention, by adding a reducing agent to gently fine-tune the CeO2 surface activity to increase the Ce3+ content, promotes the removal rate of TEOS. Through the synergistic effect of other inhibitors and passivators, a high TEOS:Si3N4 selectivity ratio is obtained. Inhibiting the removal rate of Si3N4 indirectly avoids excessive grinding of oxides in the trenches, resulting in better wafer surface planarization efficiency.

This invention relates to the field of precision machining technology for semiconductor materials, and in particular to a chemical mechanical polishing (CMP) slurry, its preparation method, and its application. The CMP slurry comprises the following components by mass percentage: 6-12% composite abrasive, 3-7% composite oxidant, 2-5% complexing agent, 0.5-2% phosphine detoxifier, 0.3-1.5% dispersant stabilizer, 0.1-1% pH adjuster, and water as the balance. The composite abrasive is a composite material of alumina and silicon dioxide. The composite oxidant includes sodium hypochlorite solution and hydrogen peroxide solution. This invention, through the rational proportioning and synergistic effect of the composite abrasive, composite oxidant, complexing agent, phosphine detoxifier, dispersant stabilizer, and pH adjuster, is not only suitable for single substrates but also compatible with the CMP polishing of three typical third-generation semiconductor materials: indium phosphide, gallium arsenide, and germanium. It exhibits good versatility and process adaptability, helping to reduce production costs and process changeover complexity.

This invention discloses a polishing slurry, its preparation method, and its application, relating to the field of polishing slurry technology. The polishing slurry of this invention comprises silica abrasive, citric acid, and sodium citrate, with a pH < 7. It effectively controls metal ion contamination during the polishing process of synthetic quartz, improves the removal rate during the polishing of quartz glass substrates, and reduces the surface roughness of the quartz. It synergistically optimizes chemical corrosion and mechanical removal, achieving an atomically smooth, scratch-free, and subsurface-damage-free quartz glass substrate surface while maintaining a high material removal rate. Furthermore, it possesses characteristics such as low contamination, easy cleaning, and environmental friendliness.

The present application provides a polishing liquid, which comprises abrasive and oxidizing agent; the oxidizing agent comprises the following raw materials: vanadium compound solution 0.1-35wt%; pH value regulator 0.001%-10wt%; flocculating agent 0.001%-10wt%; humectant 0.001%-15wt%; salt 0.001%-8wt%; water balance. The present application can polish the carbon face and silicon face of silicon carbide by the selection of vanadium compound solution, the cooperation of the rest auxiliary agents and the use of abrasive in the polishing liquid, and ensures the removal rate under the condition of less than 0.1 nanometer surface roughness.

The application relates to the polishing technical field, in particular to a polishing grinding head for CNC (computer numerical control) and a preparation method and application thereof. The grinding head comprises modified cerium oxide abrasive, a resin binder and an additive. The modified cerium oxide abrasive has a core-shell structure, the inner core is a cerium oxide solid solution co-doped with zirconium and lanthanum and having oxygen vacancy enrichment, and the outer shell is an organic chelating layer anchored on the surface. In the preparation, the oxygen vacancy enrichment powder is obtained by co-precipitation and calcination, and then a polydentate ligand is grafted to form a chelating layer; then, the resin, a lubricant and the like are wet-mixed, granulated, pressed and formed, and solidified. The application improves the chemical mechanical polishing activity by means of oxygen vacancies, and enhances the interface bonding force between the abrasive and the resin by means of the chelating layer. The obtained grinding head has good wear resistance and abrasive grains are not easy to fall off, can efficiently polish materials such as optical glass and sapphire, the surface roughness of a workpiece reaches Ra 0.05-0.2 mu m, and the processing quality and efficiency are improved.

The application discloses a through silicon via copper film chemical mechanical polishing liquid and application thereof, and the through silicon via copper film chemical mechanical polishing liquid comprises abrasive, oxidizing agent, chelating agent, corrosion inhibitor and water; the mass percentage of the abrasive in the through silicon via copper film chemical mechanical polishing liquid is 0.002-20%, and the abrasive is composed of large-particle-size abrasive and small-particle-size abrasive; and the mass ratio of the large-particle-size abrasive to the small-particle-size abrasive is (1:4)-(3:7). The through silicon via copper film chemical mechanical polishing liquid provided by the application mixes abrasive with two particle sizes in a specific ratio, increases the contact area of the abrasive and the copper film layer in the polishing process, realizes high and adjustable copper film removal rate under lower pressure, and improves local and overall corrosion and reduces the butterfly-shaped depression of copper after polishing by improving the corrosion inhibitor and the butterfly-shaped depression inhibitor while rapidly removing the copper film.