390results about How to "Improve removal rate" patented technology

The invention discloses a chemical-mechanical polishing solution. The chemical-mechanical polishing solution contains ground particles and water and also contains biguanide compound and nitrogen and azole compound, wherein the biguanide compound and the nitrogen and azole compound have synergistic effect and can remarkably improve the elimination rate of polysilicon.

The invention discloses an ion beam figuring processing method for aspheric surface processing, comprising the following steps of: firstly, detecting and testing to acquire a facial-contour error distribution data R and a removal function P; then, establishing an ion beam figuring processing path, and measuring and calculating incident angles phi of various points of an optical curved surface; calculating a resident time density function and a material removal amount M by using a calculation model and a resident time iterative algorithm, and calculating the resident times of ion beams in all processing points; carrying out linear triaxial-linkage numerical-control figuring processing on the optical surface of an optical element to be processed according to the established processing path and the resident time; then, carrying out facial-contour error detection, correcting the P according to the M and the facial-contour error distribution data before and after the processing, repeating the previous steps by using the corrected removal function P for iterative processing, and ending the processing till the requirement for facial-contour convergence precision is met. The processing method provided by the invention has the advantages of good stability, high processing precision, strong controllability and low requirement for equipment.

The present invention discloses one kind of polishing fluid for fine surfacing and its usage. The polishing fluid includes abradant and water, and the abradant is water dispersed sol type aluminum mixing silica abradant. When the polishing fluid is used in chemomechanical polishing, the downward pressure is 0.5-3 psi. The polishing fluid may be used to eliminate Ta, TaN, TEOS, FSG, BD and other low dielectric constant material effectively, and has especially high low dielectric constant material eliminating efficiency.

The invention relates to a chemical mechanical polishing solution for large-sized silicon wafers and a preparation method thereof, and the chemical mechanical polishing solution is mainly applied to the ultraprecision machining of large-sized semiconductor silicon substrate slices, and can obtain a nanometer-level ultrasmooth surface. The polishing solution consists of the following components inpercentage by weight: 5 to 50 percent of silicon dioxide abrasive, 1 to 10 percent of pH value regulator, 0.01 to 5 percent of surfactant, 0.01 to 0.05 percent of cleaning auxiliary, 0.01 to 2 percent of chelator and the balance of deionized water; and the silicon dioxide is added in the state of silicasol. Under proper polishing technological conditions, the polishing solution prepared with the components according to the contents can obtain a high-quality polished surface and meet the requirement of the semiconductor industry on the surface quality and removal rate of silicon substrate slices, and moreover, the invention has the advantages of low cost, easy cleaning, low corrosiveness and the like, and has a good application prospect.

The invention discloses a polishing solution for a sapphire substrate, and relates to the technical field of preparation of polishing materials. The polishing solution is prepared from the following active ingredients in percentage by weight: 90-95% of silica sol, 0.05-2% of polishing accelerator, 0.05-3% of complexing agent, 0.05-3% of pH regulator, and the balance of deionized water. The polishing solution has the characteristics of being high in removal rate, good in polishing effect, easy to clean, low in cost and the like, and is applicable to the polishing of sapphire substrate materials.

The invention relates to a preparation formula of a polishing solution for precision polishing of an LED sapphire substrate. The polishing solution comprises the following components in percentage by weight: 0.7-1.0% of organic base diethanol amine, 25-35% of silica solution with grain diameter of 50-70nm, 0.4-0.7% of dispersing agent ethanediamine, and 0.1-0.3% of activating agent nonylphenol polyoxyethylene ether. The removal rate of the polishing solution can be up to 28 nm/min; the surface roughness Ra is smaller than 0.5 nm, which can meet the main performance index requirements for sapphire substrate CMP (chemical mechanical polishing). The polishing solution has the advantages of high removal rate, low surface roughness and cost, non-pollution to the environment and non-corrosion to equipment.

The invention relates to a barium titanate chemico-mechanical polishing aqueous composition and its application. Specifically, the barium titanate chemico-mechanical polishing aqueous composition comprises: 1-20 wt%, preferably 8-15 wt% of an abrasive; 0.5-10 wt%, preferably 1-3 wt% of a complexing agent; and 0.01-5 wt%, preferably 0.1-1 wt% of a surface adsorbent, wherein the barium titanate chemico-mechanical polishing aqueous composition has a pH value of 8.0-12.0, preferably 10.0-11.5. The barium titanate chemico-mechanical polishing aqueous composition provided in the invention can be effectively applied to a barium titanate substrate chemico-mechanical polishing process, thereby being able to effectively obtain a polished barium titanate layer with a high polishing rate and high surface quality.

The invention relates to a method for controlling the surface roughness of silicon single-crystal liner material. According to the chemical property of silicon single-crystal liner material, the invention selects alkali medium; uses SiO2 hydrosol as abrasive; uses pH adjuster to adjust the pH value of solution 9-13.5; adds surface activator as FA/O to prepare the polish liquid. The invention uses two polishing steps as roughly polishing and finely polishing at different polishing conditions; roughly polishes for 10-20mins while the flux is 100-200ml/min, the temperature is 30-40Deg. C, the rotation speed is 40-120rpm and the pressure is 0.10-0.20MPa; finely polishing for 4-7mins while the flux is 800-1000ml/min, the temperature is 20-30Deg. C, the rotation speed is 30-60rpm, and the pressure is 0.05-0.10MPa. The invention can realize low roughness of single-crystal liner material.

The invention relates to a CMP (Chemical-Mechanical Polishing) polishing liquid with mixed grinding materials for an alkaline sapphire substrate and a preparation method thereof. The CMP polishing liquid consists of the following components in percentage by weight: 0.5-35% of a main grinding material, 0.015-0.09% of an auxiliary grinding material, 0.005-0.05% of a chelating agent, 0.005-0.05% of a surfactant, 0.01-0.5% of a pH adjustor, and the balance of deionized water, wherein the main grinding material is a nano SiO2 sol and the auxiliary grinding material is an Al2O3 sol. The auxiliary grinding material, the chelating agent, the surfactant and the alkaline pH adjustor are sequentially added into a nanosilicon sol suspension. In the polishing liquid, as the content of the main grinding material SiO2 sol is reduced, the phenomenon that the polishing liquid residue on the surface of the substrate after CMP is relatively severe is reduced to facilitate subsequent cleaning. A less amount of the auxiliary grinding material Al2O3 is added, so that the polishing speed is remarkably increased, and the roughness of the substrate after CMP is reduced.

The invention relates to a combined hydrogenation process method for treating coal tar and residual oil. The method comprises the following steps: distilling coal tar with water and solid particles removed to obtain light coal tar fraction not larger than 350 DEG C and heavy coal tar fraction larger than 350 DEG C; mixing the heavy coal tar fraction larger than 350 DEG C with residual oil, hydrogen and a catalyst, reacting the mixture in a slurry bed hydrogenation reactor, and conveying hydrogenation tail oil of 350-470 DEG C to a fixed bed residual oil hydrogenation unit; reacting the light coal tar fraction not larger than 350 DEG C with the residual oil and the hydrogen or the hydrogenation tail oil in the fixed bed residual oil hydrogenation unit, and separating the reaction products to obtain a dry gas, hydrogenated naphtha, hydrogenated diesel oil and hydrogenated residual oil. According to the method, slurry bed hydrogenation treatment is organically combined with the fixed bed residual oil hydrogenation process to process all coal tar fractions so as to improve the utilization rate of the coal tar, expand the source of residual oil hydrogenation raw materials, prolong the operation period of the fixed bed residual oil hydrogenation unit and improve the impurity removal rate of the residual oil hydrogenation product.

The invention relates to a system and a method for culturing aerobic grain sludge(AGS) and treating organic waste water generated during the culture of the aerobic grain sludge. An SBR system with short period is adopted to culture the aerobic grain sludge(AGS) and treat the organic waste water. The system consists of a main reactor, a water charging system, a water discharging system, an aeration system and a corresponding self-control device. A 2.5h short-period SBR operating mode is adopted, and four stages of water charging, aeration, precipitation and water discharging are included in each period. The water charging time is 5 min, the aeration is started while charging water, the aeration time is 132 to 144 min, the precipitation time is 3 to 15 min, and the water discharging time is 3 min. The pH value of the culture and treatment system is controlled by adding bicarbonate. The bicarbonate is sodium bicarbonate, and the adding range is between 0 and 1,200 mg/L. By utilizing the system and the method, the AGS can be quickly and economically cultured, and the organic substances, nitrogen and phosphorus in the organic waste water can be treated in high efficiency. The system and the method can be applied to the culture and production of the aerobic grain sludge and the treatment of the organic waste water, so that the system and the method have important practical values.

The invention relates to a method for relieving anaerobic ammonium oxidation system salinity shock with betaine as an additive. According to the invention, a successfully started anaerobic ammonium oxidation SBR reactor is used for processing salt-containing wastewater, wherein a volatile suspended sludge concentration is maintained at 6-9g/L, an inlet water NH4<+>-N concentration is 180-220mg/L, and the molar ratio of NH4<+>-N to NO2<->-N is controlled at 1:1-1:1.32 through adding (NH4) 2SO4 and NaNO2; the betaine concentration in the reactor is maintained at 0.1-5mmol/L through adding betaine; with a heating band, the temperature of the reactor is controlled at 30-35 DEG C; DO is controlled at 0-0.1mg/L; inlet water pH is stabilized at 7.0-8.5 through dropping NaOH/HCl; anoxic stirring is carried out for 4-8h after water feeding; when stirring is finished, the material is allowed to stand and to precipitate; when precipitation is finished, a supernatant is discharged. With the method provided by the invention, anaerobic ammonium oxidation activity recovery time when the anaerobic ammonium oxidation system is under salinity load shock can be effectively shortened, nitrogen removal rate can be improved, and a higher total nitrogen removal rate can be realized.

The invention provides a chemo-mechanical polishing slurry for copper, and its application. The slurry comprises abrasive particles, a complexing agent, an oxidant, a corrosion inhibitor, and at least one organic phosphate surfactant. The slurry has the advantages of maintenance of a high copper removal rate, improvement of the saucerization and the over polishing window of polished core wires, few pollutants the surface of polished copper, and no corrosion.

The invention discloses a denitrifying method for ammonia-containing waste water discharged in an acrylic production process. The denitrifying method comprises the following step: adding a certain quantity of denitrifier in a sewage treatment system, wherein the treatment temperature of the ammonia nitrogen-containing sewage is 18-40 DEG C, the dissolved oxygen is 0.2-3mg/L, and the pH is 7.5-8.5. Heterotrophic bacteria is used for performing superiority combination to be used as an enhanced microorganism of the waste water treatment so as to remove the ammonia nitrogen, total nitrogen and CODcr in the one reactor, and the waste water treatment effect is good; and in combination with an efficient device, the denitrifying method realizes the standard discharge of the ammonia nitrogen and persistent organic pollutant in the waste water.

The invention relates to a machine and at least one tool (10) for machining floor and road surfaces. The tool comprises at least one rotatably mounted disc (20) driven during use, which disc (20) comprises at least one machining element (30) being attached at one end (30a) to the disc. The machining element has a free end (30b) with a symmetrically blunt shape, so that the disc can be driven in different directions with the same machining element in a plane essentially in parallel with the plane of the disc.

The invention provides a container array, a formation method thereof and a semiconductor device. In the container array, a penetrating hole in an electrode group pattern layer communicates with a cylindrical internal part and a cylindrical external part of a cylindrical structure of a lower electrode, the projection of a linear boundary of the penetrating hole in a height direction penetrates through at least one top port of the lower electrode, thus, the area size, corresponding to the penetrating hole, of the top port of the lower electrode still cannot be effected even displacement deviation exists in the penetrating hole in an extension direction of the linear boundary, and a complete capacitance dielectric layer and an upper electrode can be enabled to be formed on an inner surface and an outer surface of the lower electrode. Moreover, the opening size of the penetrating hole is relatively large, so that the corresponding etching rate and the film formation rate are also favorablyimproved during etching an etching process and a film formation process via the penetrating hole.

The invention discloses chemical-mechanical polishing solution, which has good effect on polishing dielectric materials and higher rate of removing dielectric materials and simultaneously contains dimer dumbbell shaped and/or poly chain shaped silica sol ground particles. The particles have regular shapes. The wafer after polishing has better surface finish and flatness and can meet the requirements for the surfaces of the dielectric materials under various technological conditions.