25results about How to "Improve removal rate" patented technology

The application discloses a colloidal cerium oxide polishing liquid and a preparation method thereof, and steps are as follows: S1. Dissolving a soluble cerium salt in deionized water, and respectively dissolving a surfactant, a suspension aid and an imidazole modifier in the deionized water and stirring and clarifying, mixing all the solutions, and performing ultrasonic stirring and high-pressure homogenizer circulation treatment to prepare a modified reaction precursor; S2. Continuously stirring the precursor, adding a precipitant at a uniform speed, and stirring after aging by heating to form a colloidal cerium oxide nanosphere solution with a nanosphere appearance; S3. Centrifuging the solution, washing and freeze-drying the solid to obtain a cerium oxide powder, mixing and stirring the powder and deionized water to disperse, and preparing the colloidal cerium oxide polishing liquid. The polishing liquid has uniform particle size, stable dispersion, a high SiO2 / Si3N4 selection ratio, can reduce wafer scratches, guarantee stable polishing performance, and is suitable for the chemical mechanical polishing demand of a semiconductor wafer shallow trench isolation process.

The invention provides a Fe / Cu-BTC-BA catalyst as well as a preparation method and application thereof, and relates to the technical field of metal organic framework materials. The preparation method comprises the following steps: mixing an iron source, a copper source, trimesic acid, benzoic acid and hexadecyl trimethyl ammonium bromide with a solvent, carrying out solvothermal reaction at 120-140 DEG C for 20-28 hours, and filtering, washing and drying to obtain the target catalyst. Fe-Cu double active sites are constructed and are combined with double ligands to induce Cu < 2 + > to be converted into Cu < + >, so that the Lewis acidity and hydrogen sulfide adsorption activation capability are enhanced, the skeleton stability is improved, and meanwhile, the pore structure is optimized. The catalyst has the advantages of high specific surface area, highest sulfur capacity of 7.8%, high desulfurization rate and stable structure, and is suitable for catalytic desulfurization of sulfur-containing gas.

This invention aims to provide a chemical mechanical polishing (CMP) slurry for polyimide (PI) materials. The CMP slurry uses alumina abrasive, and by adjusting the pH, it can achieve a high PI removal rate while simultaneously reducing the surface roughness of the PI after polishing.

The utility model relates to the technical field of casting head separation, in particular to a separation device for a top casting head of a casting part, which comprises a separator and a first tool or a second tool matched with the separator for use, the casting part is placed on the inner side of the first tool and is pressed by the first tool, and the separator is used for separating the top casting head of the casting part. Or the pouring piece is arranged in the second tool and is fixed through the fastening piece; the separator comprises an overturning arm, an auxiliary supporting frame, a hydraulic cylinder and a pair of clamps, the overturning arm is arranged on one side of the clamps through a connecting frame, the auxiliary supporting frame is rotatably connected with the fixed end of the hydraulic cylinder through a rotating shaft, the hydraulic cylinder controls the pair of clamps to be opened or closed through a hydraulic system so as to clamp a pouring dead head of a pouring part, and the hydraulic cylinder is connected with the rotating shaft. And the overturning arm is overturned to pull away from the casting riser of the casting piece. According to the device disclosed by the utility model, the casting riser of the casting piece is pulled away by matching the separator with the first tool or the second tool, so that the defect that the riser is easily knocked by a sledge hammer is effectively overcome.

The application discloses a polishing head with master-slave partition cooperative pressurization and application thereof in wafer polishing, and belongs to the technical field of polishing heads. The polishing head comprises a connecting module, a retaining ring flexible pressurization module and a master-slave partition cooperative pressurization module. The connecting module is connected with a main shaft of a host computer, and is internally provided with a plurality of gas channels, so that stable transmission of a plurality of gases can be realized. The retaining ring flexible pressurization module is driven by a ring-shaped air bag to deform, so as to pressurize the retaining ring and ensure that the retaining ring is closely attached to a polishing pad, thereby avoiding wafer slip during polishing. The master-slave partition cooperative pressurization module comprises a physically isolated master partition and a plurality of slave partitions. The master partition has a large pressurization capacity and can control the overall material removal rate of the wafer through large pressure. The slave partitions can finely control the surface topography of the wafer through small pressure, so that high material removal rate and high flatness polishing of the wafer are comprehensively realized. In addition, the module adopts a wedge-shaped guide mechanism, so that the tolerance of the polishing head to wafer thickness difference is improved, and the safety of the polishing process is enhanced.

The present disclosure relates to a kind of iron-based amorphous alloy and its preparation method and the application of degrading tetracycline antibiotics, the molecular formula of iron-based amorphous alloy is FexSiyBz, wherein x, y, z respectively represent the atomic percentage of Fe, Si, B in alloy, 74≤x≤84, 6≤y≤16, 6≤z≤16, and x+y+z=100;Preparation method includes: S1, raw material is proportioned in smelting furnace under inert atmosphere and is smelted to prepare iron-based amorphous alloy;S2, the iron-based amorphous alloy prepared in step S1 is prepared into iron-based amorphous alloy strip by single-roll casting method;The application of degrading tetracycline antibiotics is that the iron-based amorphous alloy is applied to the treatment of wastewater containing tetracycline antibiotics, for degrading tetracycline antibiotics;The present application is more difficult to occur passivation in degradation reaction, and it is convenient to recycle.

A tungsten chemical mechanical polishing solution includes abrasive particles, a catalyst, a stabilizer, an oxidizer, a corrosion inhibitor, and a substituted pinacol borate, with the balance being water. The substituted pinacol borate used in the tungsten chemical mechanical polishing solution of the present invention increases the stability of the polishing solution and improves the removal rate.

The invention discloses a device and a method for preparing a solid-state battery cell material through magnetothermal evaporation and magnetic deposition, and the method specifically comprises the following steps: taking a roll of polymeric membrane to be unfolded as a substrate, and forming an aluminum metal current collector I on one side of the polymeric membrane through evaporation and deposition; an aluminum metal current collector II is formed on the other side of the polymeric membrane, and the surface of the aluminum metal current collector I is sequentially coated with a positive electrode material layer, an electrolyte layer and a negative electrode material layer; and taking another roll of polymeric membrane as a substrate after being unfolded, forming a copper metal current collector I on one side of the polymeric membrane through evaporation deposition, forming a copper metal current collector II on the other side of the polymeric membrane, and carrying out calendering compounding on the polymeric membrane attached with the negative electrode material layer and the polymeric membrane on the side of the copper metal current collector I to obtain the lithium ion battery negative electrode material. The problems of high production cost, low production efficiency and low drying efficiency in the preparation process of an existing solid-state battery cell material are solved.

This invention provides a cerium oxide-based polishing slurry for STI structures. The slurry comprises, by total mass, 0.05 wt%–5 wt% nano-cerium dioxide abrasive, 0.02 wt%–0.2 wt% hydroquinone, 0.05 wt%–0.25 wt% pyridinecarboxylic acid, 0.01 wt%–0.5 wt% D-sorbitol, and 0.001 wt%–0.01 wt% 1,2-benzisothiazolin-3-one, with a pH of 3–5. The cerium oxide-based polishing slurry provided by this invention, by adding a reducing agent to gently fine-tune the CeO2 surface activity to increase the Ce3+ content, promotes the removal rate of TEOS. Through the synergistic effect of other inhibitors and passivators, a high TEOS:Si3N4 selectivity ratio is obtained. Inhibiting the removal rate of Si3N4 indirectly avoids excessive grinding of oxides in the trenches, resulting in better wafer surface planarization efficiency.

This invention discloses a method for preparing a spatially confined copper-based catalyst for activating persulfate degradation of organic pollutants in water: (1) Dissolve nano-oxide materials and carbon sources in a solvent, stir thoroughly, centrifuge, dry, and then calcine the resulting powder at high temperature. After cooling, etch with an etching solution, centrifuge, and dry to obtain spatially confined carbon spheres; (2) Disperse the spatially confined carbon spheres obtained in step (1) with copper salt and precipitant in water, centrifuge, dry, and then calcine the resulting powder at high temperature. After cooling, the spatially confined copper-based catalyst is obtained. This invention also includes the spatially confined copper-based catalyst prepared by the above method and its application in activating persulfate degradation of organic pollutants in water. By constructing a carbon sphere-CuO heterostructure catalytic structure with spatial confinement effect, the synergistic effect of spatial confinement, interfacial electronic coupling, and active sites is fully utilized, achieving multiple synergistic regulation of pollutant enrichment, rapid electron transport, and selective activation of persulfate. Compared with traditional copper-based catalytic systems, this invention can effectively regulate the generation pathway of reactive oxygen species, significantly improve the utilization efficiency of persulfate and the selectivity of pollutant degradation, and significantly enhance the stability, anti-interference ability and recycling performance of the catalyst. It can be widely used in the deep purification of recalcitrant organic pollutants such as pesticides, antibiotics, and phenols, as well as in the treatment of complex wastewater.

This invention relates to the field of precision machining technology for semiconductor materials, and in particular to a chemical mechanical polishing (CMP) slurry, its preparation method, and its application. The CMP slurry comprises the following components by mass percentage: 6-12% composite abrasive, 3-7% composite oxidant, 2-5% complexing agent, 0.5-2% phosphine detoxifier, 0.3-1.5% dispersant stabilizer, 0.1-1% pH adjuster, and water as the balance. The composite abrasive is a composite material of alumina and silicon dioxide. The composite oxidant includes sodium hypochlorite solution and hydrogen peroxide solution. This invention, through the rational proportioning and synergistic effect of the composite abrasive, composite oxidant, complexing agent, phosphine detoxifier, dispersant stabilizer, and pH adjuster, is not only suitable for single substrates but also compatible with the CMP polishing of three typical third-generation semiconductor materials: indium phosphide, gallium arsenide, and germanium. It exhibits good versatility and process adaptability, helping to reduce production costs and process changeover complexity.

This invention discloses a high-efficiency electrical discharge machining (EDM) device and method with reverse flushing, belonging to the field of EDM technology. It includes an electrode tube body, electrode rotation direction, electrode inlet flushing fluid, electrode outlet flushing fluid, outer flushing fluid, main reverse flushing fluid, cavity-type workpiece, material removal, discharge erosion of particulate matter (I), electrode tube working end face, electrode tube feed motion, end face discharge area, forming electrode body, electrode feed motion, inlet reverse flushing fluid, outlet reverse flushing fluid, discharge erosion of particulate matter (II), forming electrode working end face, forming electrode discharge area, and workpiece inner cavity surface. The discharge power supply has a positive and a negative terminal. The negative terminal is connected to the electrode tube body or the forming electrode body, and the positive terminal is connected to the cavity-type workpiece. This invention has the technical effects of preventing erosion particles from adhering to the workpiece inner cavity, reducing the thickness of the recast layer on the machined surface, simplifying the electrode structure, improving machining stability, and enhancing machining quality.

A method for increasing the removal rate of polysilicon from a substrate includes mixing an acidic chemical mechanical polishing slurry containing water, an organic acid, and an abrasive with an alkaline solution containing water, an abrasive, and a lower alkyl amine compound; providing a chemical mechanical polishing pad having a polishing surface; creating a dynamic contact at an interface between the polishing pad and the substrate; and dispensing the mixture of the chemical mechanical polishing slurry and the alkaline solution onto the polishing surface at or near the interface between the polishing pad and the substrate, wherein some of the polysilicon is polished away from the substrate.

The invention discloses an application of a germanium-silicon etching solution with a high selection ratio. Specifically, the invention provides an application of the germanium-silicon etching liquid in selective etching of a sacrificial layer in a GAA MOSFET (Good Acrylic Acid Metal-Oxide-Semiconductor Field Effect Transistor) structure. The germanium-silicon etching liquid is prepared from the following components in percentage by mass: 0.1%-5% of fluoride, 5%-70% of an oxidizing agent, 0.1%-2% of an inhibitor and 1%-5% of a buffer component and a solvent, the sum of the mass percents of all the components is 100%, and the mass percents are the mass percents of all the components in the total mass of the germanium-silicon etching liquid; and the inhibitor is an EO-PO polymer. The germanium-silicon etching liquid can selectively accelerate the etching rate of a silicon-germanium alloy, and has a relatively high selection ratio.

This invention discloses a polishing slurry, its preparation method, and its application, relating to the field of polishing slurry technology. The polishing slurry of this invention comprises silica abrasive, citric acid, and sodium citrate, with a pH < 7. It effectively controls metal ion contamination during the polishing process of synthetic quartz, improves the removal rate during the polishing of quartz glass substrates, and reduces the surface roughness of the quartz. It synergistically optimizes chemical corrosion and mechanical removal, achieving an atomically smooth, scratch-free, and subsurface-damage-free quartz glass substrate surface while maintaining a high material removal rate. Furthermore, it possesses characteristics such as low contamination, easy cleaning, and environmental friendliness.

The present application provides a polishing liquid, which comprises abrasive and oxidizing agent; the oxidizing agent comprises the following raw materials: vanadium compound solution 0.1-35wt%; pH value regulator 0.001%-10wt%; flocculating agent 0.001%-10wt%; humectant 0.001%-15wt%; salt 0.001%-8wt%; water balance. The present application can polish the carbon face and silicon face of silicon carbide by the selection of vanadium compound solution, the cooperation of the rest auxiliary agents and the use of abrasive in the polishing liquid, and ensures the removal rate under the condition of less than 0.1 nanometer surface roughness.

This utility model belongs to the field of carbon fiber preparation technology, specifically relating to a solvent wave-generating washing device for dry-process PAN-based carbon fiber precursor. The device includes a delivery pump connected to a primary, secondary, and tertiary washing tank via pipelines. Spray guns and washing water inlets are installed on the side walls of both the primary and secondary washing tanks. Wave-generating pumps are installed on the bottom walls of all three tanks, and a conveyor roller assembly is installed at the precursor output end above the primary and tertiary washing tanks. This dry-process PAN-based carbon fiber precursor solvent wave-generating washing device utilizes wave-generating pumps at the bottom of the tanks to enhance mass transfer through dynamic wave water, promoting solvent diffusion from internal pores to the outside, shortening washing time, and reducing energy consumption. Furthermore, the combination of a spray device, an extrusion device, and multi-stage washing tanks improves washing efficiency.

The invention discloses a multi-source biological fermentation wastewater treatment method, system and equipment and a storage medium, and relates to the technical field of environmental engineering and wastewater treatment.The method comprises the steps that biological fermentation wastewater with different concentrations is collected to corresponding collecting pools, and water quality parameters of the collecting pools are monitored in real time; according to the monitored water quality parameters, the mixing proportion of the biological fermentation wastewater with all the concentrations is adjusted according to a preset proportion through an automatic control system, and the pH value of the mixed biological fermentation wastewater is adjusted; pumping the adjusted wastewater into a unitized anaerobic reactor for multilayer biological anaerobic treatment; the effluent subjected to anaerobic treatment sequentially passes through an A / O system and an aerobic biochemical system to be subjected to carbon-nitrogen synergistic degradation and mud-water separation. The method disclosed by the invention has the beneficial effects that the biological fermentation wastewater with different concentrations is efficiently and cooperatively treated, the effluent quality is improved, the energy consumption is reduced, and sludge recycling and stable operation of the system are realized.

The application discloses high-nitrogen carbon quantum dot composite biochar as well as a preparation method and application thereof, aims to provide high-nitrogen carbon quantum dot composite agaric biochar obtained by high-temperature co-carbonization of agaric as a carbon source and high-nitrogen carbon quantum dots as a nitrogen source, the preparation method is simple and low in cost, the high-nitrogen carbon quantum dot composite agaric biochar can realize degradation of naphthyl in water by dithionate with a small amount, so as to solve the problems of low catalytic efficiency and large dosage in current transition metal catalysts, the high-nitrogen carbon quantum dot composite agaric biochar is simple in preparation process, the synthesis of carbon quantum dots is simple, agaric, a precursor raw material of the biochar, is rich in source and cheap and easy to obtain, the prepared product is high in catalytic capacity and high in degradation rate, and can achieve the purpose of efficient pollution treatment.

This invention relates to a high-efficiency polishing slurry for silicon wafers using a synergistic silica sol, which is mainly composed of the following raw materials in the indicated weight ratios: 10-30 parts silica abrasive; 0.001-0.5 parts nitrogen-containing functional group promoter; 0.01-1 part surfactant; 0.1-5 parts acid-base adjuster; and 30-90 parts water. This polishing slurry, through the synergistic effect of the compound design of amino silica sol raw materials and the interfacial reaction regulation mechanism of the nitrogen-containing functional group promoter, effectively improves the material removal rate, significantly improves polishing uniformity, inhibits local over-corrosion and particle agglomeration, reduces surface roughness, and simultaneously reduces particle residue and metal ion contamination. It achieves a synergistic balance between high efficiency and low damage, meeting the performance requirements of polishing slurries for precision machining of high-end single-crystal silicon wafers.

The invention belongs to the field of polishing materials, and relates to boron-doped cerium oxide for a polishing solution as well as a preparation method and application of the boron-doped cerium oxide. In the boron-doped cerium oxide, the molar ratio of the boron element to the cerium element in the cerium oxide is 1: 1-1: 10. The boron-doped cerium oxide is prepared by carrying out co-precipitation reaction on cerium salt and a boron source to generate a precursor, and calcining the precursor. The boron element is introduced into cerium oxide crystal lattices, so that the problems of low chemical activity and poor polishing performance of traditional cerium oxide due to insufficient content of trivalent cerium are effectively solved. After boron is doped, an oxygen coordination environment in a cerium oxide crystal lattice is changed, part of oxygen atoms are converted from tetra-coordination combined with tetravalent cerium into tri-coordination combined with trivalent boron, and the structure change induces generation of more oxygen vacancies, so that the proportion of trivalent cerium in the material is remarkably increased.

The present application provides a chemical mechanical polishing liquid, comprising: abrasive, organic acid, five-membered nitrogen-containing heterocyclic compound, oxidizing agent and water; the abrasive is alumina. The polishing liquid of the present application has a high polyimide (PI) removal rate, and an adjustable copper (Cu) removal rate, and the PI and Cu surface roughness after polishing is low.

The application relates to the polishing technical field, in particular to a polishing grinding head for CNC (computer numerical control) and a preparation method and application thereof. The grinding head comprises modified cerium oxide abrasive, a resin binder and an additive. The modified cerium oxide abrasive has a core-shell structure, the inner core is a cerium oxide solid solution co-doped with zirconium and lanthanum and having oxygen vacancy enrichment, and the outer shell is an organic chelating layer anchored on the surface. In the preparation, the oxygen vacancy enrichment powder is obtained by co-precipitation and calcination, and then a polydentate ligand is grafted to form a chelating layer; then, the resin, a lubricant and the like are wet-mixed, granulated, pressed and formed, and solidified. The application improves the chemical mechanical polishing activity by means of oxygen vacancies, and enhances the interface bonding force between the abrasive and the resin by means of the chelating layer. The obtained grinding head has good wear resistance and abrasive grains are not easy to fall off, can efficiently polish materials such as optical glass and sapphire, the surface roughness of a workpiece reaches Ra 0.05-0.2 mu m, and the processing quality and efficiency are improved.

The application discloses a through silicon via copper film chemical mechanical polishing liquid and application thereof, and the through silicon via copper film chemical mechanical polishing liquid comprises abrasive, oxidizing agent, chelating agent, corrosion inhibitor and water; the mass percentage of the abrasive in the through silicon via copper film chemical mechanical polishing liquid is 0.002-20%, and the abrasive is composed of large-particle-size abrasive and small-particle-size abrasive; and the mass ratio of the large-particle-size abrasive to the small-particle-size abrasive is (1:4)-(3:7). The through silicon via copper film chemical mechanical polishing liquid provided by the application mixes abrasive with two particle sizes in a specific ratio, increases the contact area of the abrasive and the copper film layer in the polishing process, realizes high and adjustable copper film removal rate under lower pressure, and improves local and overall corrosion and reduces the butterfly-shaped depression of copper after polishing by improving the corrosion inhibitor and the butterfly-shaped depression inhibitor while rapidly removing the copper film.

The invention discloses a germanium-silicon etching solution with a high selection ratio. Specifically, the germanium-silicon etching liquid provided by the invention consists of the following components in percentage by mass: 0.1-5% of fluoride, 5-70% of an oxidizing agent, 0.1-2% of an inhibitor, and 1-5% of a buffer component and a solvent, the sum of the mass percents of all the components is 100%, and the mass percents are the mass percents of all the components in the total mass of the germanium-silicon etching liquid; and the inhibitor is an EO-PO polymer. The germanium-silicon etching liquid can selectively accelerate the etching rate of a silicon-germanium alloy, and has a relatively high selection ratio.