Chemical mechanical polishing solution for large-sized silicon wafers and preparation method thereof
A chemical-mechanical, polishing liquid technology, applied in the direction of polishing compositions containing abrasives, to achieve the effect of enhancing the high-low selectivity ratio, low hardness, and reducing the damage layer
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[0043] The preparation method of chemical mechanical polishing fluid for large-size silicon chip of the present invention comprises the following steps:
[0044] (1) Take a certain amount of deionized water, add an organic base pH regulator to it, and prepare a solution with a mass fraction of 1-10%;
[0045] (2) under the condition of stirring, add 0.01~5% nonionic surfactant to the above solution;
[0046] (3) Add 0.01 to 0.05% of cleaning aid to it under the condition of stirring;
[0047] (4) under the condition of stirring, add 0.01~2% chelating agent and 0.01~0.03% inorganic alkali pH value adjusting agent thereinto;
[0048] (5) Under the condition of agitation, add the silica sol with particle diameter 30~150nm, concentration 1~50%, pH=10.5±0.5 to it, finally get the large-size silicon chip with pH value of 11.50±0.20. Polishing fluid.
Embodiment 1
[0049] Embodiment 1: preparation of chemical mechanical polishing fluid
[0050] Take 2000 g of deionized water, add 370 g of piperazine, 555 g of ethylene glycol, and 4 g of isopropanol in sequence, and stir evenly. Diameter 50~80nm, silicon dioxide sol 8400g of concentration 30%, the silicon single crystal substrate polishing liquid prepared after stirring evenly, after diluting by 1:9 volume ratio, directly put on machine experiment.
[0051] Polishing experiment:
[0052] On the AMAT Refelxion LK machine, a 300mm silicon wafer (100) was tested, the polishing pad was Rhom&HaasIC1010, the polishing pressure was 3psi, the polishing disc speed was 121 rpm, and the polishing liquid flow rate was 300ml / min. Under the conditions, high quality was obtained. The polished surface, Ra=0.683nm (2μm×2μm), removal rate RR=1.74μm / min, which meets the requirements of the semiconductor industry for the surface quality and removal rate of silicon single crystal substrates.
Embodiment 2
[0053] Embodiment 2: preparation of chemical mechanical polishing fluid
[0054] Take 2000 g of deionized water, add 370 g of piperazine, 555 g of ethylene glycol, and 4 g of isopropanol in sequence, and stir evenly. Diameter 30~50nm, concentration 30% silicon dioxide sol 8400g, the silicon single crystal substrate polishing liquid that makes after stirring evenly, after diluting by the volume ratio of 1:19, go directly to experiment on the machine.
[0055] Polishing experiment:
[0056] On the AMAT Refelxion LK machine, a 300mm silicon wafer (100) was tested, the polishing pad was Rhom&HaasIC1010, the polishing pressure was 2psi, the polishing disc speed was 121 rpm, and the polishing liquid flow rate was 300ml / min. Under the conditions, high quality was obtained. The polished surface, Ra=0.642nm (2μm×2μm), removal rate RR=1.59μm / min, which meets the requirements of the semiconductor industry for the surface quality and removal rate of silicon single crystal substrates.
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