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Polishing solution containing ceric oxide powder/colloid silicon dioxide mixed abrasive and preparing process thereof

A technology of colloidal silica and ceria, which is applied in the direction of polishing compositions containing abrasives, can solve the problems of uneven size and shape of composite particles, complicated preparation methods, scratches and pits, etc., and achieves favorable Large-scale production, simple preparation process, smooth surface effect

Active Publication Date: 2014-08-20
杰明纳微电子股份有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The traditional glass rough polishing liquid generally uses a single abrasive of ceria, but due to the large particle size, it often produces hard impact when it hits the glass surface, which is easy to cause microscopic defects such as large scratches and pits, so the single abrasive is gradually compounded / mixed abrasive instead
[0005] Generally, the preparation of composite abrasives generally adopts the methods of precipitation, filtration, and high-temperature calcination. The preparation method is complicated, the time is long, and the size and shape of the prepared composite particles are not uniform.

Method used

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  • Polishing solution containing ceric oxide powder/colloid silicon dioxide mixed abrasive and preparing process thereof
  • Polishing solution containing ceric oxide powder/colloid silicon dioxide mixed abrasive and preparing process thereof
  • Polishing solution containing ceric oxide powder/colloid silicon dioxide mixed abrasive and preparing process thereof

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specific Embodiment approach

[0022] The polishing liquid containing ceria powder and colloidal silicon dioxide mixed abrasive uses cerium dioxide powder, colloidal silicon dioxide, dispersant and water as raw materials, and the weight percentage of each component is: cerium dioxide powder Colloid 3%-10%, colloidal silicon dioxide 5%-50%, dispersant 0.001%-0.5%, and the rest is water;

[0023] Wherein, the particle size of the ceria is 100-2000nm, and the particle size of the silicon dioxide is 10-200nm.

[0024] For the selected dispersant, sodium dodecylsulfonate, sodium dodecylbenzenesulfonate, Tween 80, polyethylene glycol 400, polyvinylpyrrolidone, carboxymethylcellulose, polyacrylamide , cetyltrimethylammonium bromide, polyethyleneimine, sodium hexametaphosphate, chlorododecylpyridinium, isopropanolamine, fatty alcohol polyoxyethylene ether phosphate or one or more Compositions.

[0025] There is also a pH regulator in the raw materials, the content of which ensures that the pH of the solution is c...

Embodiment 1

[0032] A polishing solution containing mixed abrasives of cerium dioxide powder and colloidal silicon dioxide, the weight percentage of each component is 3% of cerium dioxide powder with a particle size of 100nm, and 50% of colloidal particles with a particle size of 10nm Silicon dioxide (SiO 2 concentration is 35%), 0.001% of the dispersant is sodium dodecylbenzenesulfonate and polyethylene glycol 400, and the rest are water;

[0033] According to the amount of required polishing fluid, select an appropriate container (or storage equipment in actual production), and add 50% of colloidal silicon dioxide (SiO2) with a particle size of 10 nm to it. 2 Concentration is 35%), then add 3% cerium oxide powder with a particle size of 100nm and stir evenly, then add 0.001% of the composition of sodium dodecylbenzenesulfonate and polyethylene glycol 400 as a dispersant, Finally, add water to the required volume and stir evenly, add a pH adjuster, such as one or a mixture of ammonia, po...

Embodiment 2

[0036] A polishing solution containing mixed abrasives of cerium oxide powder and colloidal silicon dioxide, the weight percentage of each component is 5% of cerium oxide powder with a particle diameter of 600nm, and 45% of colloidal powder with a particle diameter of 80nm Silicon dioxide (SiO 2 Concentration is 35%), the composition of 0.008% sodium lauryl sulfonate and Tween 80 is used as dispersant, and all the other are water;

[0037] According to the amount of required polishing fluid, select an appropriate container (or storage equipment in actual production), and add 45% of colloidal silicon dioxide (SiO2) with a particle size of 80nm therein 2 Concentration is 35%), then add 5% cerium oxide powder with a particle size of 600nm and stir evenly, then add 0.008% sodium dodecylsulfonate and Tween 80 composition as a dispersant, finally add water to the required volume and stir evenly, add a pH adjuster, such as one or a mixture of ammonia, potassium hydroxide, and sodium...

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Abstract

The invention relates to a chemically mechanical polishing solution and a preparation process thereof, and particularly to a polishing solution containing a ceric oxide powder / colloid silicon dioxide mixed abrasive and a preparing process thereof. The polishing solution containing the mixed abrasive is simple in preparing process, practical and prone to production. Raw materials of the polishing solution comprise 3-10% of ceric oxide powder having a particle size of 100-2000 nm, 5-50% of colloid silicon dioxide having a particle size of 10-200 nm, and 0.001-0.5% of a dispersing agent, with the balance being water. The polishing solution is prepared by selecting a container, adding the colloid silicon dioxide solution, adding the ceric oxide powder, stirring uniformly, adding the dispersing agent and the water to the required volume, and stirring uniformly. The ceric oxide powder and the colloid silicon dioxide of different particle sizes are adopted as the abrasive. In the polishing solution, the smaller silicon dioxide particles decrease scratches, pits, and other defects so as to improve the surface quality, and the larger ceric oxide particles obtain a high removing rate.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid and a preparation process thereof, in particular to a polishing liquid containing cerium oxide powder and colloidal silicon dioxide mixed abrasives and a preparation process thereof. Background technique [0002] With the rapid development of computer technology, the requirements for the storage capacity of computer hard disks are getting higher and higher. Due to the high mechanical strength, impact resistance, and non-deformation characteristics of glass, glass substrate hard disks gradually replace the previous aluminum substrate hard disks. [0003] As the substrate of computer hard disk, glass requires a smooth surface without dents, and chemical mechanical polishing is an important means to reduce the surface roughness of glass substrates. [0004] The traditional glass rough polishing liquid generally uses a single abrasive of ceria, but due to the large particle size, it often prod...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 李维民陈杏辉
Owner 杰明纳微电子股份有限公司
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