75results about How to "Reduced removal rate" patented technology

An abrasive composition comprising non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The inventive compositions preferably comprise soft water in combination with 0.001-20 w/w % of non-polymeric organic particles, 0.1-10 w/w % of an oxidizing agent, 0.05-10 w/w % of a chelating agent, 0.01-10 w/w % of a surfactant, and 0-10 w/w % of a passivation agent at a pH in the range of 2-12, wherein said percentages are w/w (weight/weight) percentages, based on the total weight of said compositions. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.

A sheet manufacturing apparatus includes a measuring unit configured to measure thickness and air permeability of a defibration object containing fibers, a defibrating unit configured to dry-defibrate the defibration object, and a classifying unit configured to separate and remove, by airflow classification, foreign substances other than the fibers from the defibrated material defibrated at the defibrating unit.

The invention discloses a polishing solution for chemically and mechanically polishing a cobalt barrier layer structure and applications thereof. The polishing solution comprises the following components in percentage by weight: 0.01 to 20 wt% of grinding particles, 0.01 to 10 wt% of oxidant, 0.01 to 10 wt% of metal complexing agent, 0.005 to 5 wt% of metal corrosion inhibitor, 0.001 to 1 wt% of surfactant, and the balance being water. The polishing solution can form a layer of protective passivation film on the surface of cobalt and copper so as to prevent over-corrosion during the polishing process, can reduce the removal rates of cobalt and copper materials, and obtains the removal rate selectivity of an adjustable material.

The chemical and mechanical polishing fluid includes at least one kind of grinding particle and one kind of carrier, as well as at least one kind of metal corrosion inhibitor. The present invention also discloses the use of this chemical and mechanical polishing fluid in polishing metal parts. The chemical and mechanical polishing fluid of the present invention has less faults in the polished metal surface, lowered metal eliminating rate and high surface quality of polished metal parts.

The invention relates to a chemically mechanical polishing solution for a silicon carbide substrate. The chemically mechanism polishing solution comprises the following components in percentage by weight: 1-50 percent of grinding material, 0.01-8 percent of chelant, 0.01-10 percent of surfactant, 0.01-10 percent of dispersing agent, 0.1-20 percent of oxidant and the balance of deionized water. The polishing solution has little damage to the surface of the silicon carbide substrate; the silicon carbide substrate has low roughness degree value and can reach the roughness Ra of being less than 0.5nm; no scratch and corrosion pit defect exists on the surface of the silicon carbide substrate; and the chemically mechanical polishing solution has high removing speed of scratch and corrosion pit, is easy to clean, does not corrode processing equipment and pollute the environment, and is low is price of raw materials, low in cost and easy to store. The chemically mechanical polishing solution is mainly used for chemically mechanical polishing of a silicon carbide wafer for the substrate.

The present invention discloses control method for eliminating sapphire substrate material in high speed. Sapphire substrate material is polished in a polishing machine with SiO2 abrasive of 15-40 nm grain size and pH 11-13.5 polishing fluid, and at the technological conditions of 40-60 deg.c temperature, 40-120 rpm rotation speed, 0.10-0.20 MPa pressure and 100-5000 ml/min flow rate for 0.2-3 hr. The said method can realize high speed mass transfer under strong chemical reaction and high polishing rate up to 10-18 micron/hr.

By providing an interlayer dielectric material with different removal rates, a desired minimum material height above gate electrode structures of sophisticated transistor devices of the 65 nm technology or 45 nm technology may be obtained. The reduced removal rate above the gate electrode may thus provide enhanced process robustness during the planarization of the interlayer dielectric layer stack prior to the formation of contact elements.

A polishing slurry including an abrasive, deionized water, a pH controlling agent, and polyethylene imine, can control the removal rates of a silicon oxide layer and a silicon nitride layer which are simultaneously exposed during chemical mechanical polishing (CMP) of a conductive layer. A relative ratio of the removal rate of the silicon oxide layer to that of the silicon nitride layer can be controlled by controlling an amount of the choline derivative.

This invention discloses a chemical mechanical polishing starch material that is used for barrier layer. It includes grinded particle, organic Phosphonic acid, polyacrylic acids and/or its salts and/or polyacrylic acids copolymer, oxidizing agent and carrying agent. The chemical mechanical polishing starch material of this invention can prevent corrosion of part or entirety of metallic material, reduce surface contamination of lining bottom, cut down content of grinded bead, raise tantalum removal velocity and cupric removal velocity, thus obtain polishing selectivity of different basal body.

The invention provides a slurry used for copper chemical mechanical polishing and application thereof. The slurry comprises: (a) grinding particles, (b) complexing agents, (c) oxidants, (d) corrosion inhibitors, and (e) phosphate ester surface active agents. The use of the slurry provided in the invention can maintain a high removal rate of copper and improve the defects such as butterfly recesses and over-throwing windows of the polished copper wire, and the polished copper surface has few contaminants and no corrosion.

The invention discloses polishing liquid used for a shallow trench isolation polishing process. The polishing liquid contains silicon-based abrasive, anion type surfactant and water. The polishing liquid has higher removing rate of high-density silicon dioxide (HDP-Oxide) and higher selection ratio to the removing rate of silicon nitride. A polished crystal circle has perfect surface appearance and lower surface pollutant residue.

The invention discloses a manganese dioxide-magnetic biochar composite catalyst as well as a preparation method and application thereof. The preparation method comprises the following steps: 1) pyrolyzing biomass under anaerobic or oxygen-limited conditions to generate biochar, washing with water and alcohol for three times respectively, drying, grinding and sieving; 2) uniformly stirring a ferricsalt and a ferrous salt in an aqueous solution, then adding the prepared biochar, and then adding an alkali liquor; under heating, conveying an obtained coprecipitate into ferroferric oxide, and obtaining magnetic biochar; washing with watert for three times, drying, grinding and sieving; 3) adding the magnetic biochar into a manganese salt solution, and uniformly stirring; then adding a potassium permanganate solution, uniformly mixing and heating at a high temperature for a period of time. The method is simple in process, low in cost, and is capable of achieving large-scale industrial production. The prepared manganese dioxide-magnetic biochar composite catalyst is excellent in catalytic performance, can be applied to degradation and removal of various pollutants, is easy to recycle, and is an efficient catalyst.

The invention discloses a chemical mechanical polishing liquid for polishing alloy phase change materials. The polishing liquid contains water, ground particles, an oxidant and a removal rate accelerator, wherein the removal rate accelerator is one ore more kinds of soluble compounds containing tungsten. In the invention, through adding the optimized removal rate accelerator in the polishing liquid, the lower SiO2 removal rate is remained while the removal rate of GST (germanium-stibonium-tellurium) alloy is increased, and the static corrosion of the polishing liquid on the GST material is remained at a lower level.

A method of patterning a platinum layer includes the following steps. A substrate is provided. A platinum layer is formed on the substrate. An etching process is performed to pattern the platinum layer, wherein an etchant used in the etching process simultaneously includes at least a chloride-containing gas and at least a fluoride-containing gas.

The present invention discloses a chemical machinery polishing solution which contains seat grinding granule and water, and seat grinding blocker like described in Formula I, wherein X and Y alone is C or N. The polishing solution provided in the invention can reduce polycrystalline silicon removal rate without effecting silicon dioxide removal rate, and can reduce depression caused by differencebetween removal rate of polycrystalline silicon and silicon dioxide in the process of polishing obviously, hence improve plainness of wafer surface.

The invention provides a chemi-mechanical polishing fluid for polishing a semiconductor wafer, which is prepared from the following components in percentage by weight: 0.2-5% of acidic pH regulator, 0.01-5% of piperidine nitroxide free radical, 0.1-15% of surfactant, 0.5-20% of grinding particle and the balance of water. The polishing fluid provided by the invention can obviously change the removal rate of silicon nitride under acidic conditions, can regulate the selection ratio of silicon dioxide to silicon nitride, and has the advantages of simple preparation technique, high polishing precision and the like.

Prior to performing a CMP process for planarizing a metallization level of an advanced semiconductor device, an appropriate cap layer may be formed in order to delay the exposure of metal areas of reduced height level to the highly chemically reactive slurry material. Consequently, metal of increased height level may be polished with a high removal rate due to the mechanical and the chemical action of the slurry material, while the chemical interaction with the slurry material may be substantially avoided in areas of reduced height level. Therefore, a high process uniformity may be achieved even for pronounced initial surface topographies and slurry materials having a component of high chemical reactivity.

The invention provides a method for treating bisphenol A-containing wastewater. The method comprises the following steps of: adjusting pH of the bisphenol A-containing wastewater to be less than 3.5 with acid; adding 1 to 10g of aluminum powder into every liter of wastewater; and reacting the mixture at the temperature of between 20 and 40 DEG C under the condition of stirring or auxiliary aeration for 4 to 12 hours to obtain the treated wastewater. The method has the main advantages that: the method is used for treating the bisphenol A-containing wastewater, the removal effect is obvious and the removal rate of the bisphenol A is over 95 percent within 8 hours under the conditions that the reaction temperature is 25 DEG C, the initial pH is 1.5, bisphenol A concentration is 2.0mg/L and aluminum powder content is 4.0g/L; in addition, if the temperature is raised, the removal rate is obviously enhanced. The method is simple to operate, and has the advantages of low cost, low energy consumption, good treatment effect and the like.

Disclosed is a chemical mechanical polishing planarization method for copper surface, including the following steps: depositing a dielectric layer on the copper surface, and polishing the copper surface having the dielectric layer thereon. The method for planarizing a copper surface by chemical mechanical polishing process according to the present invention can achieve the planarization of the surfaces of both the copper and the dielectric layer, so as to avoid the occurrence of the dishing phenomenon.

The invention relates to a polishing fluid for chemi-mechanically polishing silicon. The polishing fluid contains water, grinding particles, at least one silicon accelerator and at least one silicon inhibitor. The amounts of the silicon accelerator and the silicon inhibitor can be adjusted to adjust the selection ratio of silicon to silicon dioxide, thereby enhancing the flattening efficiency.

The invention discloses a chemical mechanical polishing solution, which comprises grinding particles, a metal corrosion inhibitor, an organic acid, an oxidant, water and one or more quaternary ammonium salt cationic surfactants. The polishing solution plays a role in increasing the polishing rate of a low-dielectric material, but has no remarkable influence on the polishing rates of tantalum and copper, so that the polishing selectivity of a substrate material can be enhanced greatly.

The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises grinding particles, a corrosion inhibitor, a complexing agent, an oxidizing agentand at least one polyacrylic acid anionic surfactant. The invention further provides application of the polishing solution in metal copper polishing. According to the chemical mechanical polishing solution and the application thereof, the effect of improving the polishing selection ratio of the polishing solution to the copper and tantalum barrier layer is achieved; and when the polishing solutionis used for polishing a wafer, dishing and dielectric layer erosion of the copper wire after polishing can be relieved, and the defects of copper residue, corrosion and the like after polishing are overcome.