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Control method for high eliminating rate of saphire substrate material

The technology of a sapphire substrate and control method is applied in the direction of manufacturing tools, polishing compositions containing abrasives, and machine tools suitable for grinding the edge of workpieces, etc., which can solve the problem of low removal rate of the substrate surface and achieve high speed Smooth and low-damage polishing, good dispersion and little pollution

Inactive Publication Date: 2006-11-08
TIANJIN JINGLING MICROELECTRONIC MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve the problem of low substrate surface removal rate existing in the polishing process of existing sapphire substrate materials, and discloses a strong chemical action, rapid dissolution of products under strong chelation, fast removal rate, and no scratches, A technical method for high removal rate of low-cost sapphire substrate material

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Take particle size 15 ~ 25nm nanometer 40% SiO 2 Sol 1800g, put in 1720g deionized water while stirring, then weigh 40g KOH and dilute with 200g deionized water, pour in the above liquid while stirring. Then take 200g of amine base and 40g of FA / O active agent and pour them into the above liquid while stirring. After stirring evenly, 4000g of sapphire substrate polishing solution was obtained, and then chemical mechanical polishing was performed for 20min. The process conditions were: 40°C, 60rpm speed, 0.20MPa, 200g / min flow rate, and the achieved removal rate was 15μm / h.

Embodiment 2

[0033] Take 25% SiO with a particle size of 25-40nm 2 Sol 3600g, put in 180g deionized water while stirring, then weigh 20g KOH and dilute with 100g deionized water, pour in the above liquid while stirring. Then respectively take 90g of amine base and 10g of FA / O active agent and pour them into the above liquid while stirring. After stirring evenly, 4000g of sapphire substrate polishing solution was obtained, and then chemical mechanical polishing was carried out for 40min. The process conditions were: 50°C, 40rpm speed, 0.10MPa, 100g / min, and the achieved removal rate was 10μm / h.

Embodiment 3

[0035] Take the particle size of 20 ~ 30nm nanometer 35% SiO 2Sol 1800g, put in 1030g deionized water while stirring, then weigh 20g KOH and dilute with 100g deionized water, pour in the above liquid while stirring. Then take 100g of amine base and 10g of FA / O active agent and pour them into the above liquid while stirring. After stirring evenly, 4000g of sapphire substrate polishing solution was obtained, and then chemical mechanical polishing was carried out for 40min. The process conditions were: 50°C, 40rpm, 0.10MPa, 100g / min, and the achieved removal rate was 12μm / h.

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Abstract

The present invention discloses control method for eliminating sapphire substrate material in high speed. Sapphire substrate material is polished in a polishing machine with SiO2 abrasive of 15-40 nm grain size and pH 11-13.5 polishing fluid, and at the technological conditions of 40-60 deg.c temperature, 40-120 rpm rotation speed, 0.10-0.20 MPa pressure and 100-5000 ml / min flow rate for 0.2-3 hr. The said method can realize high speed mass transfer under strong chemical reaction and high polishing rate up to 10-18 micron / hr.

Description

technical field [0001] The invention belongs to chemical mechanical polishing technology, in particular to a method for controlling the polishing removal rate of sapphire substrate material. Background technique [0002] Sapphire single crystal (Sapphire), also known as white gem, the molecular formula is Al 2 o 3 , transparent, has the same optical and mechanical properties as natural gemstones, has good thermal properties, excellent electrical and dielectric properties, and chemical corrosion resistance, high infrared transmittance, and good wear resistance The hardness is second only to diamond, with a Ta Mok's grade of 9, and it still has good stability at high temperatures, with a melting point of 2030°C, so it is widely used in industry, national defense, scientific research and other fields, and is increasingly used as Manufacturing materials for parts in high-tech fields such as solid-state lasers, infrared windows, substrates for semiconductor chips, and precision...

Claims

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Application Information

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IPC IPC(8): B24B9/16C09G1/02
Inventor 刘玉岭牛新环
Owner TIANJIN JINGLING MICROELECTRONIC MATERIALS CO LTD
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