Chemical mechanical polishing solution

Abstract

The invention discloses a chemical mechanical polishing solution, which comprises grinding particles, a metal corrosion inhibitor, an organic acid, an oxidant, water and one or more quaternary ammonium salt cationic surfactants. The polishing solution plays a role in increasing the polishing rate of a low-dielectric material, but has no remarkable influence on the polishing rates of tantalum and copper, so that the polishing selectivity of a substrate material can be enhanced greatly.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid, more specifically, the invention relates to a polishing fluid for polishing low dielectric materials. Background technique [0002] In the manufacture of integrated circuits, the standard of interconnection technology is improving. With the increase of the number of interconnection layers and the reduction of process feature size, the requirements for the flatness of the silicon wafer surface are getting higher and higher. If there is no planarization ability, The creation of complex and dense structures on semiconductor wafers is very limited, and the chemical mechanical polishing method CMP is the most effective method to achieve the planarization of the entire silicon wafer. [0003] The CMP process uses an abrasive mixture and a polishing pad to polish the surface of an integrated circuit. In a typical chemical mechanical polishing method, the substrate is placed in direct contact wit...

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Problems solved by technology

[0006] The problem to be solved by the present invention is: provide a kind of chemical mechanical polishing fluid, under lower polishing pressure, it can improve the removal rate of low dielectric material and solve the difficult selection ratio of low dielectric material and metal removal rate in the polishing process problem of control

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