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Compositions and methods for selective polishing of silicon nitride materials

A nitrogen heterocyclic compound and composition technology, applied in the field of polishing compositions, can solve the problems of structural complexity and changes in performance characteristics and the like

Active Publication Date: 2015-03-25
CMC MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In general, structural complexity and performance characteristics vary for different applications

Method used

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  • Compositions and methods for selective polishing of silicon nitride materials
  • Compositions and methods for selective polishing of silicon nitride materials
  • Compositions and methods for selective polishing of silicon nitride materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] This example describes the effect of cationic polymers and non-polymeric UNH compounds on the removal of silicon nitride, polysilicon and silicon oxide.

[0045] The polishing compositions were used to chemical mechanically polish silicon nitride, silicon oxide, and polysilicon blanket wafers, respectively, on a Mirra 200 mm CMP apparatus with a D100 polishing pad. Each polishing composition contained 0.2% by weight of an aqueous slurry (in deionized water at a pH of 4). Other components of the CMP composition are shown in Table 1, where "Quat" represents poly(methacryloxyethyltrimethylammonium chloride) from Alco Chemical (Alco 4773); p(4-PV) stands for poly(4-vinylpyridine); TMDP stands for 4,4'-trimethylenedipyridine; and PEG 1450 stands for poly(ethylene glycol) with a number average molecular weight of 1450 Daltons.

[0046] Table 1

[0047]

[0048] Each composition was used individually to polish 200 mm diameter blanket wafers of silicon nitride, polysilico...

Embodiment 2

[0053] Under the following conditions, when having Evaluations of other formulations lacking poly(4-vinylpyridine) were performed on a Mirra polisher of the pad: downforce 3 psi, head speed (HS) 101 rpm, platen speed (PS) 100 rpm, and slurry flow rate 150 ml / min. Each test composition was prepared as in Example 1 using calcined ceria in deionized water and had a pH of 4. The concentrations of the various components of the formulations are shown in Table 3, while the observed polishing rates in Angstroms / minute for nitride, polysilicon and oxide are shown in Table 4. In each of Table 3 and Table 4, the abbreviations used are the same as those used in Example 1.

[0054] table 3

[0055]

[0056] Table 4

[0057]

[0058] * = mean of two independent runs

[0059] As shown by the data in Table 4, all compositions exhibited high oxide removal rates. The removal rates of the compositions of the invention comprising the quaternary polymer were all greater than 1000 angs...

Embodiment 3

[0061]This example describes the effect of including EP / PO block copolymers in addition to PEG 1450 in the CMP compositions of the invention. Evaluations were performed on a Mirra polisher with a D100 pad under the following conditions: downforce 3 psi, polishing head speed (HS) 101 rpm, platen speed (PS) 100 rpm, and slurry flow rate 150 ml / min. Each test composition was prepared as in Example 1 using calcined ceria in deionized water and had a pH of 4, except that Examples 3K and 3L had a pH of 2.3. The individual component concentrations of the formulations are shown in Table 5, while the observed removal rates for nitride, polysilicon and oxide are shown in Angstroms / min and shown in Table 6. In each of Table 5 and Table 6, L31 represents L31 Surfactant (BASF), and the remaining abbreviations are the same as those used in Example 1.

[0062] table 5

[0063]

[0064] Table 6

[0065]

[0066] The results in Table 6 demonstrate a high degree of removal selectivit...

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Abstract

The present invention provides an acidic aqueous polishing composition suitable for polishing a silicon nitride-containing substrate in a chemical-mechanical polishing (CMP) process. The composition, at point of use, preferably comprises 0.01 to 2 percent by weight of at least one particulate ceria abrasive, 10 to 1000 ppm of at least one non-polymeric unsaturated nitrogen heterocycle compound, 0 to 1000 ppm of at least one cationic polymer, optionally, 0 to 2000 ppm of at least one polyoxyalkylene polymer, and an aqueous carrier therefor. The cationic polymer preferably is selected from a poly(vinylpyridine) polymer, a quaternary ammonium-substituted acrylate polymer, a quaternary ammonium-substituted methacrylate polymer, or a combination thereof. Methods of polishing substrates and of selectively removing silicon nitride from a substrate in preference to removal of polysilicon using the compositions are also provided.

Description

technical field [0001] The present invention relates to polishing compositions and methods. More specifically, the present invention relates to methods for polishing silicon nitride containing substrates and compositions therefor. Background technique [0002] Semiconductor wafers for integrated circuits typically include a substrate such as silicon or gallium arsenide on which a plurality of transistors have been formed. By patterning regions in the substrate and layers on the substrate, the transistors are chemically and physically connected to the substrate. Transistors and layer vias are primarily composed of some form of silicon oxide (SiO 2 ) separated by an interlayer dielectric (ILD). Transistors are connected to each other by using well-known multi-level interconnections. A typical multilevel interconnect consists of stacked thin films composed of one or more of the following materials: titanium (Ti), titanium nitride (TiN), tantalum (Ta), aluminum-copper (Al- ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14H01L21/306
CPCC09G1/02C09K3/1409C09K3/1463H01L21/31053H01L21/30625H01L21/31116H01L21/32139
Inventor W.沃德
Owner CMC MATERIALS INC
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