Chemi-mechanical polishing fluid

Abstract

The invention relates to a polishing fluid for chemi-mechanically polishing silicon. The polishing fluid contains water, grinding particles, at least one silicon accelerator and at least one silicon inhibitor. The amounts of the silicon accelerator and the silicon inhibitor can be adjusted to adjust the selection ratio of silicon to silicon dioxide, thereby enhancing the flattening efficiency.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid for polishing polysilicon. Background technique [0002] In the manufacture of integrated circuits, the standard of interconnect technology is increasing, and layers are deposited on top of each other, resulting in the formation of irregular topography on the substrate surface. A planarization method used in the prior art is chemical mechanical polishing (CMP). The CMP process uses a mixture containing abrasives and a polishing pad to polish the surface of a silicon wafer. In a typical chemical mechanical polishing method, the substrate is placed in direct contact with a rotating polishing pad, applying pressure on the backside of the substrate. During polishing, the pad and stage are rotated while maintaining a downward force on the backside of the substrate to apply an abrasive and chemically active solution (commonly called a polis...

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Problems solved by technology

[0008] The purpose of the present invention is to solve the problem that the above-mentioned polysilicon / silicon dioxide selectivity ratio is too high, and the remaining polysilicon in the silicon dioxide butterfly-shaped depression is difficult to remove, and to provide a kind of polysilicon / silicon dioxide with suitable polysilicon for polishing polysilicon CMP

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