142results about How to "Process window width" patented technology

The invention discloses a resistance spot welding technique for steel workpiece with a coating layer. According to the technique, the steel workpiece to be welded is connected in a lap joint mode, pressure is applied to the lap joint, and is increased and maintained; a first welding current is applied to the lap joint, and is enabled to continuously act for a first time; then the first welding current is removed and a second time is maintained; after the second time is maintained, a second welding current is applied to the lap joint, and is enabled to continuously act for a third time; after keeping for the third time, the second welding current is gradually reduced to zero within a fourth time; and wherein the second welding current is larger than the first welding current, and the sum of the first time and the second time is larger than or equal to 600 ms. The technique has the advantages that the coating layer is damaged by outputting the first welding current, the second welding current is output to complete heating welding, a longer stopping output timing sequence is arranged between the two, coating material is promoted to be discharged, splashing is inhibited, and a wide process window can be obtained.

The present invention discloses a low-temperature co-fired ceramic material and a preparation method thereof, wherein the low-temperature co-fired ceramic material comprises 40-60 wt% of La2O3-B2O3-Al2O3 glass ceramic and 40-60 wt% of an Al2O3 ceramic filling phase. The preparation method comprises: La2O3-B2O3-Al2O3 glass ceramic preparation, Al2O3 ceramic powder pretreatment, composite powder preparation, composite powder molding, and low-temperature sintering. According to the present invention, the low-temperature co-fired ceramic material has advantages of wide process window, low dielectric loss and the like, and can be used in the high frequency field, and the preparation method has characteristics of simpleness, convenience, and low equipment investment.

The present invention relates to a preparation method for preparing the surface SiC coating of a silicon carbide-based composite material and belongs to the technical field of oxidation protection. According to the method, silicon powders are embedded in the surface of the silicon carbide-based composite material. After the high-temperature vacuum infiltration process, the composite material is embedded in a melt. After that, the composite material embedded in the melt is placed in an excess carbon source, and is subjected to the high-temperature heat treatment again. After residues on the surface of the composite material are removed, the composite material with the SiC coating can be obtained. According to the technical scheme of the invention, the coating is prepared through the reactive infiltration process. Therefore, during the preparation of the coating, the density of the base material can be further improved at the same time. the excess melt is removed by the carbon source, so that the formed SiC coating is uniform and smooth.

The invention discloses preparation of polymer including -(RO)- or -(RCOO)-groups in a repeating unit in polysilicon chemical mechanical polishing solution which can realize automatic stopping mechanism, and the application during the operation process of the polymer, wherein, the R is alkyl with 1 to 10 carbon atom(s). The polymer of the invention is used for the preparation of polishing solution and the use of the polishing solution, and can realize the polysilicon chemical mechanical polishing process under the fixed and conventional process parameter polishing condition, thus avoiding the generation of polysilicon dish shaped dent default in a silicon dioxide channel, removing the polysilicon residual in the polysilicon dish shaped dent default, and enhancing the smoothness of a wafer surface after being polished. The polymer has the advantage that the process window is wide, thereby the production efficiency is greatly improved, and the production cost is reduced greatly.

The invention discloses a steel plate for Ni-Mo low-temperature high-ductility X100 pipe fittings. The steel plate is prepared from the following chemical components in percentage by weight: 0.09-0.12% of C, 1.5-1.9% of Mn, 0.1-0.3% of Si, less than or equal to 0.003% of S, less than or equal to 0.015% of P, 0.04-0.065% of Nb, 0.008-0.003% of Ti, 0.02-0.10% of V, less than or equal to 0.06% of Alt, less than or equal to 0.010% of N, less than or equal to 0.006% of O, 0.40-0.50% of Mo, less than or equal to 0.35% of Cu, 0.51-0.65% of Ni, less than or equal to 0.35% of Cr, less than or equal to 0.01% of Ca and the balance of Fe. The manufacturing process of the steel plate comprises liquid steel smelting, external refining, plate blank reheating, TMCP process and quenched-tempered heat treatment; the finished product has high strength and high low-temperature ductility, and is welded and matched with an X100 main body pipeline; the process window of the heat treatment is widened by the ratio of the components Ni and Mo, and therefore, the yield and the percent of pass of the steel products are increased.

The invention discloses a high-speed dry-spray spinning method for preparing deformed section carbon fiber precursor fiber, pre-oxidized fiber or carbon fiber. An acrylonitrile polymer is dissolved byusing a solvent to obtain a uniform spinning solution, the spinning solution enters into a coagulating bath component of which the temperature is lower than the gelation temperature point of the spinning solution to form nascent fiber after passing through spinneret orifices to form a spinning trickle, and the working procedures of drafting, washing, drying and oil application aftertreatment arecarried out on the nascent fiber to obtain the carbon fiber precursor fiber. The carbon fiber precursor fiber is pre-oxidized and carbonized to obtain pre-oxidized fiber or carbon fiber. The method has the advantages of low cost and good fiber performance since fiber with similar straight toothed spur gear shape section characteristics is prepared in the condition of high-power drafting.

The invention discloses a copper nanometer wire-based copper-copper bonding process. An adhesion layer and a seed layer are sequentially precipitated on the surface of a substrate; a layer of photoresist is prepared on the seed layer, and a round hole is formed in the photoresist; copper is electroplated in the round hole to obtain a copper convex point; a Cu(OH)2 nanometer wire is grown on the surface of the copper convex point by a hydrothermal method; the residual photoresist is removed; the Cu(OH)2 nanometer wire is subjected to thermal decomposition to obtain a CuO nanometer wire; the CuO nanometer wire is reduced to obtain a copper nanometer wire; the copper nanometer wire is prepared on two substrates respectively by the steps, and the copper nanometer wires on the two substrates are bonded in a hot pressing way. The copper nanometer wires are prepared by reduction and are directly applied to subsequent bonding, an additional oxide layer removing step is avoided, a compact bonding layer can be obtained at relatively low temperature and pressure, the preparation process is simple, complex equipment is not required, the cost is low, and the bonding process has very high application value.

The invention discloses a copper nanorod based copper-tin-copper bonding process and structure. The process comprises the following steps of sequentially depositing an insulation layer, an adhesion layer and a seed layer on the surface of a substrate; spin-coating a layer of photoresist on the seed layer, and fabricating round holes in the photoresist; electroplating copper in the round holes to obtain copper convex points; removing the photoresist, and removing the exposed seed layer and the exposed adhesive layer; spin-coating the photoresist on the surfaces and the peripheries of the copper convex points, and exposing the upper surfaces of the copper convex points; electroplating tin convex points on the copper convex points of one of two substrate units obtained according to the above steps, and removing the photoresist; depositing copper nanorods on the copper convex points of the other substrate unit, and removing the photoresist; and bonding the two substrate units by a hot-pressing mode. The copper-tin-copper bonding structure is acquired according to the bonding process. According to the bonding process and the bonding structure, the copper nanorods are applied to copper-tin-copper bonding, the bonding temperature can be effectively reduced, and a tight bonding surface is obtained; and the preparation process is simple and controllable, is low in cost, and has great application value.

The invention discloses a method for manufacturing hot-rolled dual-phase steel based on a CSP (Compact Strip Production) process. The method comprises the following steps: (1) preparing a raw material comprising the following chemical compositions in percentage by weight: 0.055-0.070% of C, 0.40-0.50% of Si, 1.20-1.50% of Mn, less than or equal to 0.015% of P, less than or equal to 0.002% of S and the balance of Fe and unavoidable impurities; and (2) sequentially pretreating molten steel, carrying out converter top and bottom combined blowing, refining in an LF, continuously casting thin billet, soaking in a tunnel furnace, continuously rolling by virtue of an F1-F7 seven-stand hot continuous rolling mill group, cooling by virtue of a laminar cooling system, cooling by virtue of an ultra-fast cooling system and coiling. In the method, the out-of-furnace temperature of the continuous casting billet passing through the tunnel soaking furnace is equal to or greater than 1130 DEG C, the initial rolling temperature in the hot continuous rolling step is equal to or greater than 1010 DEG C, the reduction rate in an F1 stand is equal to or greater than 40%, the reduction rate in an F2 stand is equal to or greater than 33.3%, the temperature after the laminar cooling and air cooling is 600-690 DEG C, the temperature after ultra-fast cooling is 150-250 DEG C, the ultra-fast cooling speed is 70-150 DEG C/s. The microstructures of 11.0mm-thickness 590MPa-grade dual-phase steel in the thickness direction, which is produced from a simple low C-Mn-component system in an industrial mass manner, are ferrite and martensite duplex microstructures so that the dual-phase steel is excellent in comprehensive performance.

The invention provides preparation and degradation methods of hot-melt phenolic resin and a composite material thereof, and relates to the technical field of high polymer materials and chemical recovery thereof. The preparation method of the hot-melt phenolic resin comprises the following specific steps of: carrying out heating reaction on a phenolic compound and an aldehyde compound under the action of a catalyst, cooling, adding arylboronic acid and a derivative thereof, heating, boiling and refluxing again, carrying out decompression dehydration after the reaction is finished, adding a modifier and a flexibilizer, and vacuumizing to obtain the hot-melt phenolic resin. The preparation method of the hot-melt phenolic resin-based composite material comprises the following steps of: preparing a resin adhesive film from the hot-melt phenolic resin by adopting a hot-melt preimpregnation method, compounding the resin adhesive film with a fiber reinforcement body, and carrying out hot-pressing treatment to obtain the hot-melt phenolic resin-based composite material. The hot-melt phenolic resin and the hot-melt phenolic resin-based composite material are heated and decomposed in an ethanol or acetone solvent, and can be degraded and recycled. The preparation process is simple to operate and low in energy consumption, the production process is easy to control, and large-batch continuous production can be realized. The degradation process is safe, environment-friendly, green and pollution-free.

The invention provides an efficient crystalline silicon solar battery front side silver paste which is prepared by adding glass powder into the silver paste, wherein the glass powder is prepared from the following ingredients in weight percentage: 0-90% of Bi203, 0-30% of B203, 0-50% of SiO2, 0-20% of Al203 and 0-20% of ZnO. The efficient crystalline silicon solar battery front side silver paste provided by the invention has a wider process window, has excellent ohmic contact and at the same time has a high short-circuit current, so that the conversion efficiency is high, the stability is good and the cost performance is high.

The invention discloses a diffusion technology for preparing a Se battery by using an etching process. According to the diffusion technology, the gradient diffusion temperature, the source flow and the oxygen flow are adopted; and the diffusion technology specifically comprises the following steps of: a, putting a silicon sheet into a diffusion furnace; b, rising the temperature to 840-850 DEG C, introducing nitrogen and oxygen from a carrying source, keeping the temperature, gradually reducing the flow of a diffusion source, adding the flow of the oxygen and lasting the whole process for 10-30min; c, increasing the temperature to 860-870 DEG C, and keeping for 5-15min; and d, reducing the temperature and finishing the diffusion. By utilizing the diffusion technology for preparing the Se battery by using the etching process, high enough surface concentration and phosphorosilicate glass thickness are ensured with very good phosphorus concentration distribution curves, and a very low emitter saturation current and a very wide process window are ensured for a later etching method in etching a high sheet resistor.

The invention provides a preparation method of a solar battery electrode. The preparation method comprises the following steps: carrying out imaging to form an electrode slurry layer containing a conductive component; integrally carrying out a first heat treatment process on a semiconductor base including the electrode slurry layer containing the conductive component; and carrying out a second heat treatment process on the area of the electrode slurry layer. According to the preparation method of the solar battery electrode, the sintering temperature can be reduced, the contact resistance andseries resistance of the battery electrode can be reduced, and the sintering process window of a battery can be broadened, so that preferable battery conversion efficiency is achieved.

The invention discloses flame-retardant heat-resistant bismaleimide resin and a preparation method thereof, belonging to the technical field of high performance thermosetting resin. According to the technical scheme, the flame-retardant heat-resistant bismaleimide resin is prepared from the following raw materials in parts by weight: 5-20 parts of phenylphosphonic dichloride, 21-52 parts of 1-amino-5-naphthol and 10-40 parts of maleic anhydride. The bismaleimide resin has a good molding technology and a cured product has high heat resistance and excellent flame retardance; the glass-transition temperature of the cured product reaches 370 DEG C, and the limit oxygen index reaches 48; benzyl di(5-amino) naphthoxy phosphonic acid is prepared by reaction between phenylphosphonic dichloride and excessive 1-amino-5-naphthol, and prepared benzyl di(5-amino) naphthoxy phosphonic acid is reacted with maleic anhydride to obtain the flame-retardant heat-resistant bismaleimide resin. The flame-retardant heat-resistant bismaleimide resin and the preparation method disclosed by the invention have the beneficial effects that the reaction is stable, the process condition is easy to control, unreacted raw materials can be recycled, and no three wastes are generated, so that the flame-retardant heat-resistant bismaleimide resin and the preparation method are suitable for industrialized production.

The invention discloses a terminal structure of a super-junction semiconductor device and a manufacturing method thereof. The terminal structure comprises a plurality of super-junction P-pillars; each super-junction P-pillar comprises a top P-pillar and a bottom P-pillar; the top P-pillar of each super-junction P-pillar is narrower than the bottom P-pillar thereof. The thermal structure and the manufacturing method thereof have the advantages that the terminal structure can be high in reliability and small in size, the cost is low, the process is simple and easy to implement and a process window is wide.

The invention discloses a preparation method and application of an aluminum nitrogen scandium alloy target material, and belongs to the technical field of magnetic control sputtering target preparation. By using the method, the aluminum nitrogen scandium alloy target material is obtained by using AlN powder and Sc powder as raw materials through mixing, pressure sintering shaping and mechanical processing. The relative density of the obtained aluminum nitrogen scandium alloy target material is greater than 97 percent; the target material can be applied to sputtering deposition of a nitride film; in a sputtering film plating process, the stable film forming can be realized without introducing reaction gas of nitrogen gas.

The invention relates to the technical field of organic light-emitting diode manufacturing, particularly to a silicon-based OLED micro display device and a preparation method thereof. The display device is composed of a silicon-based CMOS drive circuit substrate, a top light-emitting multilayer composite anode, a blue light organic light-emitting layer, an antireflection layer, a quantum dot colorfilter layer, an inorganic or polymer composite film sealing layer and a glass cover plate. In the preparation of the display device, a dry etching process is used for preparing composite anode pixelpoints, and a doping mode is used for realizing the preparation of a blue light organic light-emitting layer. The display device has the characteristic of low optical loss.

The invention relates to a polishing fluid for chemi-mechanically polishing silicon. The polishing fluid contains water, grinding particles, at least one silicon accelerator and at least one silicon inhibitor. The amounts of the silicon accelerator and the silicon inhibitor can be adjusted to adjust the selection ratio of silicon to silicon dioxide, thereby enhancing the flattening efficiency.