Application of non-ionic polyalcohol in producing and using self-stopping polysilicon polishing solution

Abstract

The invention discloses preparation of polymer including -(RO)- or -(RCOO)-groups in a repeating unit in polysilicon chemical mechanical polishing solution which can realize automatic stopping mechanism, and the application during the operation process of the polymer, wherein, the R is alkyl with 1 to 10 carbon atom(s). The polymer of the invention is used for the preparation of polishing solution and the use of the polishing solution, and can realize the polysilicon chemical mechanical polishing process under the fixed and conventional process parameter polishing condition, thus avoiding the generation of polysilicon dish shaped dent default in a silicon dioxide channel, removing the polysilicon residual in the polysilicon dish shaped dent default, and enhancing the smoothness of a wafer surface after being polished. The polymer has the advantage that the process window is wide, thereby the production efficiency is greatly improved, and the production cost is reduced greatly.

Description

technical field [0001] The present invention relates to the application of polymers containing -(RO)- or -(RCOO)-groups in repeating units in the preparation and use of polysilicon chemical mechanical polishing fluids capable of realizing a self-stopping mechanism, wherein R is the number of carbon atoms It is an alkyl group of 1-10. Background technique [0002] In the polishing process of polysilicon, there are usually the following two problems: 1. Because the polishing rate selection ratio of polysilicon / silicon dioxide is too high, when the final polishing process stops on the silicon dioxide layer, it is inevitable that there will be polysilicon discs. Shape concave. Such as figure 1 As shown, a and b in the figure are the structures before and after polishing, respectively. And this problem will be exacerbated with the increase of the trench width between silicon dioxide. This can severely impact device performance. 2. During the shallow trench isolation (STI) ch...

AI Technical Summary

Problems solved by technology

[0002] In the polishing process of polysilicon, there are usually the following two problems: 1. Because the polishing rate selection ratio of polysilicon / silicon dioxide is too high, when the final polishing process stops on the silicon dioxide layer, it is inevitable that there will be polysilicon discs. shape denting

Although the above technologies have achieved a certain planarization effect to a certain extent and shortened the polishing time and cost, they are either operated in two steps, or only suppress the polishing rate of polysilicon, and the operation is complicated and the polishing effect is limited.

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