Chemical-mechanical polishing solution

Abstract

A chemical-mechanical polishing liquid for polishing silicon is disclosed. The polishing liquid comprises water, abrasive particles, as least one accelerant for silicon, and at least one inhibitor for silicon. By adjusting the contents of the accelerant and the inhibitor for silicon, the polishing liquid can adjust the selectivity ratio of silicon to silicon dioxide, and improve the flattening efficiency.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid for polishing polysilicon. Background technique [0002] In the manufacture of integrated circuits, the standard of interconnect technology is increasing, and layers are deposited on top of each other, resulting in the formation of irregular topography on the substrate surface. One planarization method used in the prior art is chemical mechanical polishing (CMP). The CMP process uses a mixture containing abrasives and a polishing pad to polish the surface of a silicon wafer. In a typical chemical mechanical polishing method, the substrate is placed in direct contact with a rotating polishing pad, and a load is used to exert pressure on the backside of the substrate. During polishing, the pad and table are rotated while maintaining a downward force on the backside of the substrate to apply an abrasive and chemically active solution (co...

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Problems solved by technology

[0008] The purpose of the present invention is to solve the problem that the above-mentioned polysilicon / silicon dioxide selectivity ratio is too high, and the remaining polysilicon in the silicon dioxide butterfly-shaped depression is difficult to remove, and to provide a kind of polysilicon / silicon dioxide with suitable polysilicon for polishing polysilicon CMP

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