59results about How to "Improve planarization efficiency" patented technology

A slurry for chemical mechanical polishing of Co. The slurry comprises components by weight as follows, Inhibitor 0.01-2%, Oxidant 0-5%, Abrasive 0.1-10%, Complexing agent 0.001-10%, and the rest of water. The pH value of the slurries is adjusted to 3-5 by a pH value adjustor. The inhibitor is chosen from one or more kinds of five-membered heterocycle compound containing S and N atoms or containing S or N atom. The oxidant is one or more chosen from H₂O₂, (NH₄)₂S₂O₈, KIO₄, and KClO₅. The abrasive is one or more chosen from SiO₂, CeO₂, and Al₂O₃. The complexing agent is one or more chosen from amino acid and citric acid. The slurry can effectively prevent Co over corrosion and reduce the polishing rate of Co in the polishing process.

A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.

The polishing pad (104) is useful for polishing at least one of magnetic, optical and semiconductor substrates (112) in the presence of a polishing medium (120). The polishing pad (104) includes a three-dimensional network of interconnected unit cells (225). The interconnected unit cells (225) are reticulated for allowing fluid flow and removal of polishing debris. A plurality of polishing elements (208, 308 and 408) form the three-dimensional network of interconnected unit cells (225). The polishing elements (208, 308 and 408) have a first end connected to a first adjacent polishing element at a first junction (209, 309 and 409) and a second end connected to a second adjacent polishing element at a second junction (209, 309 and 409) and having a cross-sectional area (222, 322 and 422) that remains within 30% between the first and the second junctions (209, 309 and 409). The polishing surface (200, 300 and 400) formed from the plurality of polishing elements (208, 308 and 408) remains consistent for multiple polishing operations.

The invention provides silicon dioxide-based CMP (Chemical Mechanical Polishing) solution which is applied to global planarization of a very large scale integrated circuit silicon substrate and an interlayer medium and a preparation method of the silicon dioxide-based CMP solution. The polishing solution contains the following components in percentage by weight: 10-50 percent of nano silicon dioxide grinding material, 0.1-10 percent of dispersant, 0.1-10 percent of wetting agent, 0.1-10 percent of chelating agent, 0.01-1 percent of pH (Potential of Hydrogen) regulator and the balance of de-ionized water. The polishing solution is prepared through the means of: modifying with a surfactant, strongly and mechanically stirring, performing high-shear grinding, performing ultrasonic dispersion and the like, and the problem of extreme easiness in flocculation and agglomeration of nano-scale grinding material particles is solved. Since the particle size distribution of the grinding material is narrow, the range is selectable, the polishing rate is easy to adjust and control and the polishing solution is alkaline, equipment is not corroded, less damage is caused, cleaning is easy and the environment is not polluted. The silicon dioxide-based CMP solution can be used for chemical mechanical polishing of the very large scale integrated circuit silicon substrate, the interlayer medium, a shallow trench isolation isolator, conductor and damascene metal.

The invention relates to a method for preparing an infrared cut-off filter, specifically comprising the steps of cutting, shaping, slicing, chamfering, grinding, double-sided chemical polishing, coating, and the like. An infrared cut-off filter prepared by the method has high quality. The rejection rate is low. The production efficiency is high.

The present invention relates to a polishing pad and a method for making the same. The polishing pad has a grinding layer. The grinding layer includes a plurality of fibers and a main body. The fineness of the fibers is 0.001 den to 6 den. The main body is a foam and encloses the fibers. The main body has a plurality of first pores and a plurality of second pores, wherein the first pores are communicated with each other, and the second pores are independent from each other. The size of the first pores is at least 5 times greater than the size of the second pores. The hardness of the grinding layer is 30 to 90 shore D, and the compression ratio thereof is 1% to 10%.

A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

The present invention relates to a polishing pad and its manufacturing method. The polishing pad includes a plurality of fibers and a polymer elastomer compound. These fibers are interlaced to form a fibrous matrix. The polymer elastomer compound is composed of a first polymer elastomer resin and a second polymer elastomer resin, wherein the weight average molecular weight of the first polymer elastomer resin is 100,000-300,000, and the second polymer elastomer resin is elastic The body resin is a two-component polymer elastomer resin, which includes a first component and a second component. The first component is a polyester polyol with a molecular weight of 1500 to 2500, and its weight percentage is 1% to 15% %, the second component is a polyester polyol with a molecular weight of 3500 to 4500, and its weight percentage is 85% to 99%. Therefore, the polishing pad not only has better rigidity and high planarization efficiency, but also has interconnected holes and active fibers, so that the workpiece to be polished/grinded has excellent surface quality.

The invention relates to a manufacturing method for a sapphire fingerprint recognition panel. The manufacturing method comprises the specific steps of crystal growth, crystal bar drawing, crystal cutting, laser wafer taking, grinding, chamfering, annealing, double-face polishing, film plating, ink smearing, hot drying and the like. According to the manufacturing method for the sapphire fingerprint recognition panel, the quality of finished wafers is high, the rejection rate is low, and the production efficiency is high.

The invention provides an STI forming method, comprising the following steps: providing a semiconductor substrate; forming a nitride layer with an atomic layer deposition method on the semiconductor substrate; forming a hard mask on the nitride layer, wherein the nitride layer and the hard mask form an etching barrier layer; etching the hard mask, the nitride layer and the semiconductor substrate so as to form a groove in the hard mask, the nitride layer and the semiconductor substrate; deposing an insulated medium, wherein the insulated medium covers the side wall and the bottom of the groove and the hard mask; planarizing the insulated medium; and removing the nitride layer and the hard mask. The method reduces the possibility that the etching barrier layer is easy to drop off in etching process.

The invention discloses a polishing pad and a preparation method and application thereof. The polishing pad is provided with a buffer layer and a polishing layer, wherein the buffer layer is formed bycombined pieces with different compression ratios and resilience rates, and the polishing layer is overlapped on the buffer layer; and a center circle center buffer area, one or more middle annular buffer areas sequentially arranged around the center buffer area and an outer edge annular buffer area arranged around the middle buffer areas are formed by the different combined pieces. The compression ratios and the resilience rates of the combined pieces of the buffer layer are different in the direction from the center of the polishing pad to the outer edge of the polishing pad, in the mechanical polishing process, the wear rate of the combined pieces is basically kept consistent, and therefore the surface of a wafer to be polished can become flat, and the flattening efficiency is high.

The invention discloses chemical mechanical polishing solution for polishing polycrystalline silicon. The polishing solution comprises ground particles, water and one or a plurality of oxidants. Under the alkaline condition, the polishing solution disclosed by the invention can obviously change removal rate of the polycrystalline silicon, regulates selection ratio of the polycrystalline silicon to silicon dioxide and obviously improves planarization efficiency of the polycrystalline silicon and removal of polishing residues.

The invention discloses a polishing pad and a preparation method and application thereof. The polishing pad is provided with combination pieces and a bottom lining, the combination pieces are fixed tothe bottom lining, the combination pieces form a polishing layer together, the polishing layer is provided with a central polishing area, one or more intermediate polishing areas which are sequentially arranged around the central polishing area and outer edge polishing areas which are arranged around the intermediate polishing areas, the central polishing area is circular, the intermediate polishing areas are annular, and the outer edge polishing areas are annular; annular gaps are correspondingly formed between adjacent two polishing areas, and are used for receiving polishing fluid in the polishing process; the shore hardness of the polishing layer is sequentially decreased in the direction from the central polishing area to the outer edge polishing areas; and the shore hardness gradient of the two adjacent polishing areas is 0.5-5 D. The hardness of the polishing pad is decreased gradually in the diameter direction, in the process of mechanical polishing, the wear rate of the polishing pad is basically kept to be same, thus the surface of a to-be-polished crystal plate can be flat, and the flattening efficiency is high.

The invention relates to a preparation method of a sapphire fingerprint identification panel, which specifically comprises the working procedures of crystal growth, crystal extracting, crystal cutting, laser slice taking, grinding, chamfering, annealing, double-sided polishing, film coating, ink printing, baking and the like. The preparation method of the sapphire fingerprint identification panel is high in slice forming quality, low in rejection rate and high in production efficiency.

The present invention provides methods for making a pre-conditioned chemical mechanical (CMP) polishing pad having a pad surface microtexture effective for polishing comprising grinding the surface of the CMP polishing pad having a radius with a rotary grinder while it is held in place on a flat bed platen surface, the rotary grinder having a grinding surface disposed parallel to or substantially parallel to the surface of the flat bed platen and made of a porous abrasive material, wherein the resulting CMP polishing pad has a surface roughness of from 0.01 μm to 25 μm, Sq. The present invention also provides a CMP polishing pad having a series of visibly intersecting arcs on the polishing layer surface, the intersecting arcs having a radius of curvature equal to or greater than half of the radius of curvature of the pad and extending all the way around the surface of the pad in radial symmetry around the center point of the pad.

The present invention provides pre-conditioned chemical mechanical (CMP) polishing pads comprising a polymer, preferably, a porous polymer having a pad surface microtexture effective for polishing having a series of visibly intersecting arcs on the polishing layer surface, the intersecting arcs having a radius of curvature equal to or greater than half of the radius of curvature of the pad and extending all the way around the surface of the pad in radial symmetry around the center point of the pad wherein the resulting CMP polishing pad has a surface roughness of from 0.01 μm to 25 μm, Sq. The CMP polishing pads may be made by methods comprising grinding the surface of a CMP polishing pad with a rotary grinder to form the surface microtexture.