Chemical mechanical polishing solution for polishing polycrystalline silicon

A chemical mechanical and polishing liquid technology, applied in the direction of polishing compositions containing abrasives, etc., can solve the problems of polysilicon sag and affect the process, etc., achieve the effect of changing the removal rate, reducing the surface roughness of silicon, and improving the planarization efficiency

Inactive Publication Date: 2021-04-06
芯越微电子材料(嘉兴)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the past, when the polysilicon layer and the silicon dioxide layer were polished using alkaline slurry with silicon dioxide as abrasive particles, the removal rate of polysilicon was often much higher than that of silicon dioxide, which easily caused polysilicon Depression caused by excessive removal, affecting the subsequent process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Contrast polishing liquid 1 ' silicon dioxide (100nm) 15%, water surplus, pH value are 11.2;

[0017] The polishing rate of polysilicon is 3050A / min, the polishing rate of silicon dioxide is 554A / min, the selection ratio of the two is 5.5, and the surface roughness Ra of the silicon wafer is 100nm;

[0018] Polishing liquid 1 silicon dioxide (120nm) 15%, hydrogen peroxide 0.5%, water balance, PH value is 11.2;

[0019] The polishing rate of polysilicon is 2100A / min, the polishing rate of silicon dioxide is 512A / min, the selectivity ratio of the two is 4.1, and the surface roughness Ra of the silicon wafer is 90nm;

[0020] Polishing liquid 2 silicon dioxide (l00nm) 15%, hydrogen peroxide 2%, AEO-9 0.5%, water balance, PH value is 11.2; the polishing rate of polysilicon is 1749A / min, the polishing rate of silicon dioxide is 544A / min, the selection ratio of the two is 3.22, and the surface roughness Ra of the silicon wafer is 5nm;

[0021] Polishing liquid 3 silicon di...

Embodiment 2

[0026] Comparative polishing liquid 2' silicon dioxide (100nm) 10%, water balance, PH value is 11.2;

[0027] The polishing rate of polysilicon is 2000A / min, the polishing rate of silicon dioxide is 370A / min, the selectivity ratio of the two is 5.4, and the surface roughness of the silicon wafer is 120nm;

[0028] Polishing liquid 6 silicon dioxide (100nm) 10%, hydrogen peroxide 5%, AEO-9 0.1% water balance, PH value is 7; the polishing rate of polysilicon is 588A / min, the polishing rate of silicon dioxide is 154A / min min, the selection ratio of the two is 3.8, and the surface roughness of the silicon wafer is 5nm;

[0029] Polishing liquid 7 silicon dioxide (100nm) 10%, hydrogen peroxide 5%, AEO-9 0.8% water balance, PH value is 10; the polishing rate of polysilicon is 739A / min, the polishing rate of silicon dioxide is 286A / min min, the selection ratio of the two is 2.58, and the surface roughness of the silicon wafer is 2nm;

[0030] Polishing liquid 8 silicon dioxide (100...

Embodiment 3

[0034] Polishing liquid 10 silicon dioxide (100nm) 2%, hydrogen peroxide 5%, water surplus, pH value is 11.2; The polishing rate of polysilicon is 568A / min, and the polishing rate of silicon dioxide is 160A / min, both The selection ratio is 3.55, and the surface roughness of the silicon wafer is 85nm;

[0035] The process parameters during polishing are: downforce 3psi, polishing disc (14 inches in diameter) rotating speed 70rpm, polishing head rotating speed 80rpm, polishing liquid flow rate 200ml / min>the polishing pad is DOW IC1010 pad Logitech LP50 polishing machine.

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Abstract

The invention discloses a chemical mechanical polishing solution for polishing polycrystalline silicon. The chemical mechanical polishing solution comprises grinding particles, water, one or more oxidants and a nonionic surfactant for reducing the surface roughness of a silicon wafer, the polishing solution comprises the following components in percentage by weight: 0.1-30% of grinding particles, 0.1-20% of an oxidant and 0.001-5% of a nonionic surfactant. According to the method, the removal rate of polycrystalline silicon can be remarkably changed under the alkaline condition, the silicon surface roughness is low, the selection ratio of the polycrystalline silicon to silicon dioxide is adjusted, the planarization efficiency of the polycrystalline silicon is remarkably improved, and polishing residues are removed.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid, in particular to a chemical mechanical polishing liquid for polishing polysilicon. Background technique [0002] In the manufacture of integrated circuits, the standard of interconnect technology is increasing, and layers are deposited on top of each other, resulting in the formation of irregular topography on the substrate surface. A planarization method used in the prior art is chemical mechanical polishing (CMP). The CMP process uses a mixture of abrasives and chemicals and a polishing pad to polish the surface of a silicon wafer. In a typical chemical mechanical polishing method, the substrate is placed in direct contact with a rotating polishing pad, and a load is used to apply pressure on the backside of the substrate. During polishing, the pad and stage rotate while maintaining a downward direction on the backside of the substrate. Force, the abrasive and chemically active solutio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 张建冯继恒尹淞鲁晨泓
Owner 芯越微电子材料(嘉兴)有限公司
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