Chemical mechanical polishing solution for polishing polycrystalline silicon
A chemical-mechanical and polishing liquid technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems affecting processes, polysilicon depressions, etc., and achieve the effect of improving planarization efficiency
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Embodiment 1
[0023] Contrast polishing liquid 1' silicon dioxide (100nm) 15%, water balance, PH value is 11.2;
[0024] The polishing rate of polysilicon is 3330A / min, that of silicon dioxide is 521A / min, and the selectivity ratio of the two is 5.38.
[0025] Polishing liquid 1 silicon dioxide (120nm) 15%, hydrogen peroxide 0.5%, water balance, PH value is 11.2; the polishing rate of polysilicon is 1866A / min, the polishing rate of silicon dioxide is 482A / min, both The selection ratio is 3.87.
[0026] Polishing liquid 2 silicon dioxide (100nm) 15%, hydrogen peroxide 2%, water balance, pH value is 11.2; the polishing rate of polysilicon is 1747A / min, the polishing rate of silicon dioxide is 543A / min, both The selection ratio is 3.22.
[0027] Polishing liquid 3 silicon dioxide (100nm) 15%, hydrogen peroxide 5%, water balance, PH value is 11.2; The polishing rate of polysilicon is 950A / min, the polishing rate of silicon dioxide is 560A / min, both The selection ratio was 1.70.
[0028] Pol...
Embodiment 2
[0032] Contrast polishing liquid 2' silicon dioxide (100nm) 10%, water balance, PH value is 11.2;
[0033] The polishing rate of polysilicon is 2002A / min, that of silicon dioxide is 375A / min, and the selectivity ratio of the two is 5.34.
[0034] Polishing liquid 6 silicon dioxide (100nm) 10%, hydrogen peroxide 5%, water balance, pH value is 7; the polishing rate of polysilicon is 572A / min, the polishing rate of silicon dioxide is 151A / min, both The selection ratio is 3.79.
[0035] Polishing liquid 7 silicon dioxide (100nm) 10%, hydrogen peroxide 5%, water balance, pH value is 10; the polishing rate of polysilicon is 739A / min, the polishing rate of silicon dioxide is 286A / min, both The selection ratio is 2.58.
[0036] Polishing liquid 8 silicon dioxide (100nm) 10%, hydrogen peroxide 5%, water balance, PH value is 11.2; the polishing rate of polysilicon is 815A / min, the polishing rate of silicon dioxide is 379A / min, both The selection ratio is 2.15.
[0037] Polishing liq...
Embodiment 3
[0040] Polishing liquid 10 silicon dioxide (100nm) 2%, hydrogen peroxide 5%, water balance, PH value is 11.2; the polishing rate of polysilicon is 568A / min, the polishing rate of silicon dioxide is 160A / min, both The selection ratio is 3.55.
[0041] The process parameters during polishing are: downforce 3psi, polishing disc (diameter 14 inches) rotating speed 70rpm, polishing head rotating speed 80rpm, polishing liquid flow rate 200ml / min, polishing pad is PPG fast pad CS7, Logitech LP50 polishing machine.
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