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Chemical mechanical polishing solution for polishing polycrystalline silicon

A chemical-mechanical and polishing liquid technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems affecting processes, polysilicon depressions, etc., and achieve the effect of improving planarization efficiency

Active Publication Date: 2015-03-25
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the past, when the polysilicon layer and the silicon dioxide layer were polished using alkaline slurry with silicon dioxide as abrasive particles, the removal rate of polysilicon was often much higher than that of silicon dioxide, which easily caused polysilicon Depression caused by excessive removal, affecting the subsequent process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Contrast polishing liquid 1' silicon dioxide (100nm) 15%, water balance, PH value is 11.2;

[0024] The polishing rate of polysilicon is 3330A / min, that of silicon dioxide is 521A / min, and the selectivity ratio of the two is 5.38.

[0025] Polishing liquid 1 silicon dioxide (120nm) 15%, hydrogen peroxide 0.5%, water balance, PH value is 11.2; the polishing rate of polysilicon is 1866A / min, the polishing rate of silicon dioxide is 482A / min, both The selection ratio is 3.87.

[0026] Polishing liquid 2 silicon dioxide (100nm) 15%, hydrogen peroxide 2%, water balance, pH value is 11.2; the polishing rate of polysilicon is 1747A / min, the polishing rate of silicon dioxide is 543A / min, both The selection ratio is 3.22.

[0027] Polishing liquid 3 silicon dioxide (100nm) 15%, hydrogen peroxide 5%, water balance, PH value is 11.2; The polishing rate of polysilicon is 950A / min, the polishing rate of silicon dioxide is 560A / min, both The selection ratio was 1.70.

[0028] Pol...

Embodiment 2

[0032] Contrast polishing liquid 2' silicon dioxide (100nm) 10%, water balance, PH value is 11.2;

[0033] The polishing rate of polysilicon is 2002A / min, that of silicon dioxide is 375A / min, and the selectivity ratio of the two is 5.34.

[0034] Polishing liquid 6 silicon dioxide (100nm) 10%, hydrogen peroxide 5%, water balance, pH value is 7; the polishing rate of polysilicon is 572A / min, the polishing rate of silicon dioxide is 151A / min, both The selection ratio is 3.79.

[0035] Polishing liquid 7 silicon dioxide (100nm) 10%, hydrogen peroxide 5%, water balance, pH value is 10; the polishing rate of polysilicon is 739A / min, the polishing rate of silicon dioxide is 286A / min, both The selection ratio is 2.58.

[0036] Polishing liquid 8 silicon dioxide (100nm) 10%, hydrogen peroxide 5%, water balance, PH value is 11.2; the polishing rate of polysilicon is 815A / min, the polishing rate of silicon dioxide is 379A / min, both The selection ratio is 2.15.

[0037] Polishing liq...

Embodiment 3

[0040] Polishing liquid 10 silicon dioxide (100nm) 2%, hydrogen peroxide 5%, water balance, PH value is 11.2; the polishing rate of polysilicon is 568A / min, the polishing rate of silicon dioxide is 160A / min, both The selection ratio is 3.55.

[0041] The process parameters during polishing are: downforce 3psi, polishing disc (diameter 14 inches) rotating speed 70rpm, polishing head rotating speed 80rpm, polishing liquid flow rate 200ml / min, polishing pad is PPG fast pad CS7, Logitech LP50 polishing machine.

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PUM

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Abstract

The invention discloses chemical mechanical polishing solution for polishing polycrystalline silicon. The polishing solution comprises ground particles, water and one or a plurality of oxidants. Under the alkaline condition, the polishing solution disclosed by the invention can obviously change removal rate of the polycrystalline silicon, regulates selection ratio of the polycrystalline silicon to silicon dioxide and obviously improves planarization efficiency of the polycrystalline silicon and removal of polishing residues.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid for polishing polysilicon. Background technique [0002] In the manufacture of integrated circuits, the standard of interconnect technology is increasing, and layers are deposited on top of each other, resulting in the formation of irregular topography on the substrate surface. One planarization method used in the prior art is chemical mechanical polishing (CMP). The CMP process uses a mixture of abrasives and chemicals and a polishing pad to polish the surface of a silicon wafer. In a typical chemical mechanical polishing method, the substrate is placed in direct contact with a rotating polishing pad, and a load is used to exert pressure on the backside of the substrate. During polishing, the pad and table are rotated while maintaining a downward force on the backside of the substrate, an abrasive and chemically active solution (comm...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304
Inventor 荆建芬张建蔡鑫元
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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