The invention provides 
silicon dioxide-based CMP (Chemical Mechanical 
Polishing) solution which is applied to global planarization of a 
very large scale integrated circuit 
silicon substrate and an interlayer medium and a preparation method of the 
silicon dioxide-based CMP solution. The 
polishing solution contains the following components in percentage by weight: 10-50 percent of 
nano silicon dioxide 
grinding material, 0.1-10 percent of dispersant, 0.1-10 percent of 
wetting agent, 0.1-10 percent of chelating agent, 0.01-1 percent of pH (Potential of 
Hydrogen) 
regulator and the balance of de-ionized water. The 
polishing solution is prepared through the means of: modifying with a surfactant, strongly and mechanically stirring, performing high-shear 
grinding, performing 
ultrasonic dispersion and the like, and the problem of extreme easiness in 
flocculation and agglomeration of nano-scale 
grinding material particles is solved. Since the 
particle size distribution of the grinding material is narrow, the range is selectable, the 
polishing rate is easy to adjust and control and the polishing solution is alkaline, equipment is not corroded, less damage is caused, cleaning is easy and the environment is not polluted. The 
silicon dioxide-based CMP solution can be used for chemical mechanical polishing of the 
very large scale integrated circuit silicon substrate, the interlayer medium, a 
shallow trench isolation isolator, conductor and damascene 
metal.