Chemical mechanical polishing compositions for metal and associated materials and method of using same

a technology of mechanical polishing compositions and metals, applied in the direction of polishing compositions with abrasives, manufacturing tools, lapping machines, etc., can solve the problems of significant copper dishing on the surface of semiconductor wafers, step coverage problems, and/or dielectric erosion, etc., to achieve high removal rate, low removal rate, and high removal rate

Inactive Publication Date: 2006-07-20
MA YING +5
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0022] The present invention is directed to a stable, chemical mechanical polishing slurry comprising a first slurry, which has a high removal rate on copper and a low removal rate on barrier material and a second slurry, which has a high removal rate on barrier material and a low to moderate removal rate on copper and the associated dielectric material. The first slurry composition comprises at least a moderately hard organic polymeric abrasive, an oxidizing agent and an activating agent and the second slurry comprises at least a silica abrasive and an oxidizing agent. Also disclosed as the present invention, is a method for chemical mechanical polishing of copper, barrier material and dielectric material with the polishing slurry of the present invention. As will become apparent from the discussion that follows, the stable slurry and method of using the slurry provide for removal of material and polishing of semiconductor wafer surfaces with significantly no dishing, or oxide erosion, with significantly no surface defects and good planarization efficiency.

Problems solved by technology

If left unattended, the elevational disparities in each level of an integrated circuit can lead to various problems.
For example, when dielectric, conductive, or semiconductive material is deposited over a topological surface having elevationally raised and recessed regions, step coverage problems may arise.
If appropriate film removal selectivity is not maintained dishing of copper and / or erosion of the dielectric may occur.
This disparity in removal rates during the removal and polishing of the barrier material results in significant dishing of copper on the surface of the semiconductor wafer and / or poor removal of the barrier material.
Wide particle size distribution may significantly impact the planarization efficiency.
This produces defects in the form of scratches, voids, defects or pits on the polished wafer surface.
As a result, defects in the form of micro-scratches are produced on copper surfaces during and after polishing.
Slurry remains behind in the micro-scratches causing the semiconductor device to fail.
Micro scratches and poor planarization efficiency result in integrated circuits with increased defects and a lower yield.

Method used

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  • Chemical mechanical polishing compositions for metal and associated materials and method of using same
  • Chemical mechanical polishing compositions for metal and associated materials and method of using same
  • Chemical mechanical polishing compositions for metal and associated materials and method of using same

Examples

Experimental program
Comparison scheme
Effect test

example 1

Slurry 1 Formulations Showing Static Etch Rate of Copper

[0083] Several formulations of the first slurries were prepared. The static etch removal rates of these formulations are described in Table 2. As can be seen from Table 2, the first step slurry formulations of the present invention were effective in achieving acceptable static copper removal rates of 50 Å / min

TABLE 2 Removal Rate Under Static Conditions (SRR). Component Values in Weight PercentCitricSRRSlurryH2O2AcidIDAAbrasiveNH3pH{acute over (Å)}150.22.5300(2)250.12.6237(2)3554.1208(5)45152N / A(5)550.252.3N / A(5)6510.22.11600(2)944(3)7510.252.2N / A(5)80.550.002733.51.17(1)950.50.005233.5661(1)1050.20.002983.7150(1)90(2)1150.50.20.008913.5640(1)501(3)1250.550.005293.5793(1)1350.250.0033.6149(1)98(2)70(5)1450.50.250.008853.5858(1)627(2)453(5)15100.50.250.009123.51029(1)578(2)468(5)439(10)1610.50.250.008513.5855(1)666(2)563(5)520(10)1750.250.550.013.5601(1)488(2)450(5)1850.25150.0173.5836(1)561(2)377(5)1950.250.550.443.5960(1)504...

example 2

[0084] Table 3 outlines twelve formulations and polishing conditions for the second step polishing slurry tested on Ta, TaN, Cu and thermal oxide blanket wafers (Table 4). The various formulations comprise between 0 to 13 percent hydrogen peroxide (H2O2) as oxidizing agent, 0 to 0.05 percent ethylenediamine as complexing agent, between 0 to 0.1 percent BTA, or between 0 to 0.2 percent iminodiacetic acid as passivating agent, and between 5 to 10 percent colloidal silica or 5 to 10 percent precipitated silica. The pH of the formulations ranged from 6.8 to 8.8. The polishing conditions ranged from table speed (TS) of 45 to 125 rpm, quill speed (QS) of 42 to 116 rpm, down force (DF) of 3.5 to 4 psi, and a flow rate (FR) of 160 mL / min.

TABLE 3 Compositions and Polishing Conditions for Second Step SlurryColloidalPrecipitatedPolish ConditionsSlurry:H2O2EDABTAIDASilicaSilicaKOHpHTS / QS / DF / FR10.0558.8125 / 116 / 4.0 / 16025*6.8125 / 116 / 4.0 / 16030.50.0556.845 / 42 / 3.5 / 160413108.1125 / 116 / 4.0 / 1605130.210...

example 3

Stability Experiment

[0087] The poly (methyl methacrylate) colloid of the step one slurry formulation shows outstanding chemical and mechanical stability. The particles did not show any significant changes in terms of particle size and particle size distribution after aging two months, that is, the mean particle size remains about 45 nm and the range of distribution is from about 5 nm to 100 nm.

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Abstract

A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.

Description

TECHNICAL FIELD OF THE INVENTION [0001] The present invention relates generally to the chemical mechanical polishing of semiconductor devices systems and methods, and more particularly, to a formulation and method for use in polishing metal films in semiconductor interconnection processes. BACKGROUND OF THE INVENTION [0002] The present invention relates to a chemical mechanical polishing composition for surfaces of a semiconductor wafer, and more particularly, to a chemical mechanical polishing slurry and a method for using the slurry to remove and polish copper containing materials, barrier materials and dielectric materials layered on semiconductor wafer surfaces. [0003] Semiconductor wafers are used to form integrated circuits. The semiconductor wafer typically includes a substrate, such as silicon, upon which dielectric materials, barrier materials, and metal conductors and interconnects are layered. These different materials have insulating, conductive or semi-conductive proper...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B24B7/30B24B37/005B24B37/04C09G1/02H01L21/321
CPCB24B37/0056B24B37/044C09G1/02H01L21/3212
Inventor MA, YINGWOJTCZAK, WILLIAMREGULSKI, CARYBAUM, THOMAS H.BERNHARD, DAVID D.VERMA, DEEPAK
Owner MA YING
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