66results about How to "Low removal rate" patented technology

The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, one or more nonionic polymers, optionally one or more phosphonic acids, optionally one or more nitrogen-containing zwitterionic compounds, optionally one or more sulfonic acid copolymers, optionally one or more anionic copolymers, optionally one or more polymers comprising quaternary amines, optionally one or more compounds that adjust the pH of the polishing compositions, water, and optionally one or more additives. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.

A method of forming an oxygen-containing ceramic hard mask film on a semiconductor substrate involves receiving a semiconductor substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber and depositing forming by PEVCD on the substrate an oxygen-containing ceramic hard mask film, the film being etch selective to low-k dielectric and copper, resistant to plasma dry-etch and removable by wet-etch. The method may further involve removing the oxygen-containing ceramic hard mask film from the substrate with a wet etch. Corresponding films and apparatus are also provided.

The invention discloses a method of removing arsenic from an acid arsenic-containing solution. The method comprises the following steps: the pH value of the acid arsenic-containing solution is adjusted to be 1.0-5.0, an iron-containing material and an oxidizing agent are added, the temperature of the solution is controlled at 25-90 degrees, after reaction, ferric arsenate sediment and arsenic-removed post liquid are obtained, and the removal of arsenic is realized. When copper contained in the acid arsenic-containing solution is greater than or equal to 0.2g/L, iron powder replacement copper removal treatment is required to be carried out first. The method has the advantages that the method is simple in process, low in cost and high in arsenic removal rate and obtained ferric arsenate sediment is stable; valuable metals can be recycled effectively; and the method has very high practicability and economic value.

A wafer carrier with a back pressure applicator system adapted to provide high resolution back pressure control. A plurality of millimeter scale distensible elements are disposed between the wafer carrier pressure plate and a process wafer, and selectively distended to provide excess backpressure to select small areas of a wafer known to exhibit resistance to removal vis-á-vis the surrounding wafer surface. Distensible elements may be in the form of expandable pneumatic chambers or electro-mechanical elements such as solenoids, shape memory elements, electrostatic plates, etc.

The invention belongs to the technical field of supergravity dedusting, aims at solving the problem that existing supergravity dedusting methods are low in fine particle removing rate, high and unstable in energy consumption, prone to causing packing blockage when being used for treating high-concentration dust-containing gas and incapable of realizing continuous running and provides a device and a method for removing fine particles in gas in a supergravity manner. A gas inlet of a supergravity rotating packing bed is connected with a dust-containing gas source through a vortex shedding flowmeter, a liquid inlet is connected with a liquid storage tank through a liquid pump, a liquid outlet is connected with the liquid storage tank through a U-shaped liquid sealing device, the gas inlet is tangentially arranged outside a shell of the supergravity rotating packing bed, a square diversion inlet plate is mounted at the gas inlet, a packing layer is arranged in the supergravity rotating packing bed, and packing is plastic Pall ring packing. Total dedusting efficiency is up to 99.6%, grading efficiency is remarkably improved, and the device and the method are more suitable for removing the fine particles in the gas. The device is lower in economic cost, more stable in running, low in energy consumption, suitable for industrial application, free of blockage, supportive of continuous running, light in weight and convenient to transport.

A polishing compound for chemical mechanical polishing of a substrate, which comprises (A) abrasive grains, (B) an aqueous medium, (C) tartaric acid, (D) trishydroxymethylaminomethane and (E) at least one member selected from the group consisting of malonic acid and maleic acid, and more preferably, which further contains a compound having a function to form a protective film on the wiring metal surface to prevent dishing at the wiring metal portion, such as benzotriazole. By use of this polishing compound, the copper wirings on the surface of a semiconductor integrated circuit board can be polished at a high removal rate while suppressing formation of scars as defects in a polishing step. Particularly in a first polishing step of polishing copper wirings having a film made of tantalum or a tantalum compound as a barrier film, excellent selectivity will be obtained, dishing and erosion due to polishing are less likely to occur, and an extremely high precision flat surface of a semiconductor integrated circuit board can be obtained.

A method for material removal and planarization of a substrate includes formation of a weak passivating film on overburden to be removed in the presence of an electrolyte bath and an applied electric potential. An engineered polishing substrate is brought into compliance with the weak passivating film, and using low pressure to minimize shear stress realized at the surface of the substrate, material removal is controlled by mechanical contact between the polishing substrate and the weak passivating film. The weak passivating film is periodically reformed, and mechanical contact continued until desired material removal and substrate planarization is achieved.

The invention discloses a high selective separability nanofiltration membrane preparation method which comprises the following steps: (1) preparing a separation layer with high flux and a low inorganic salt removing rate; (2) preparing a separation layer with high negative charge density. The high selective separability nanofiltration membrane preparation method disclosed by the invention has theadvantages that the defined amount of dendritic polyfunctional group membrane material is added into a water phase solution to form a polypiperazine-amide separation layer with smaller osmotic resistance; then interface polymerization reaction is utilized to finish residual acyl chloride groups on the surface of an initial polypiperazine-amide membrane, reacting with strong-electronegativity compound containing hydroxyl or amino and utilizing a chemical bond mode to durably enhance membrane surface electronegativity to obtain a high selective separability nanofiltration membrane. In addition,as the introduced strong-electronegativity compound contains sulfonic acid groups or phosphate groups, an isoelectric point is lower than that of a general polypiperazine-amide nanofiltration membrane, and the electronegativity of the membrane surface can be kept under a lower pH value; thus, a wider pH value application range is obtained.

The invention discloses a method for removing magnesium oxide in phosphate concentrate through phosphatic fertilizer and phosphorus chemical industry acid wastewater. The method comprises the steps as follows: adding the acid wastewater and the phosphate concentrate pulp to a reacting groove to be reacted for 0.5 to 6 hours at 15 to 50 DEG C, so as to obtain reactive size; carrying out solid-liquid separation to the reactive size, wherein the solid phase produced by the separation is the phosphate concentrate with the magnesium oxide removed; and then preparing via a phosphoric acid by wet process. The method provided by the invention is simple in technology, easy to operate in the reaction, high in removal rate of magnesium oxide, low in loss ratio of the phosphorus in the phosphate concentrate, and high in economy.

The invention relates to a catalyst for removing hydrogen gas in carbonic oxide (CO) mixed gas by selective oxidation, which mainly solves the technical problems of low hydrogen gas removing rate and high CO loss rate in the prior art. The invention adopts the technical scheme that the catalyst comprises the following components (carrier, active component and assistant) metered by simple substances in percentage by weight of the catalyst: 0.003-1% of at least one active component selected from platinum metals, 0.005-15% of at least one assistant selected from alkali metal compounds, alkali earth metal compounds or transition metal compounds, and 84-99.5% of at least one carrier selected from aluminum oxide, silicon carbide, silicon oxide, molecular sieve, magnesium oxide, zirconium oxide or titanium dioxide, thereby preferably solving the problems in the prior art. The catalyst of the invention can be used for industrial production for removing the hydrogen gas in the CO mixed gas by the selective oxidation.

A polishing solution, comprising copper ions and chloride ions in Cu/Cl molar ratio of 10⁻¹ to 10³ and at pH 0.5 to 10, is suited for polishing a surface composed of a nonferrous metal material such as copper or copper alloy. Thicker metal film can be polished at high removal rate, so that distribution in film thickness becomes uniform.

A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

An abrasive free formulation for chemical mechanical polishing and method for using the formulation for polishing copper and related materials. The abrasive free formulation has a high removal rate on copper and a low removal rate on barrier material. The abrasive free formulation comprises at least an oxidizing agent and an activating agent.

A polishing compound for chemical mechanical polishing of a substrate, which comprises (A) abrasive grains, (B) an aqueous medium, (C) tartaric acid, (D) trishydroxymethylaminomethane and (E) at least one member selected from the group consisting of malonic acid and maleic acid, and more preferably, which further contains a compound having a function to form a protective film on the wiring metal surface to prevent dishing at the wiring metal portion, such as benzotriazole. By use of this polishing compound, the copper wirings on the surface of a semiconductor integrated circuit board can be polished at a high removal rate while suppressing formation of scars as defects in a polishing step. Particularly in a first polishing step of polishing copper wirings having a film made of tantalum or a tantalum compound as a barrier film, excellent selectivity will be obtained, dishing and erosion due to polishing are less likely to occur, and an extremely high precision flat surface of a semiconductor integrated circuit board can be obtained.

The invention relates to a method for purifying materials containing metal impurities, in particular to a method for removing at least one metal impurity of iron, sodium and calcium from hydrocarbon materials, which comprises that the materials containing metal impurities are mixed with flash gas (low grade gas) in a low-pressure separator of a hydrogenation unit to obtain the materials with a higher impurity removal rate by a fixed bed layer of filtering materials, absorbent or catalyst. Compared with the prior art, the method in the invention has mild operation conditions and high impurity removal rate, and can be used in processing various materials containing metal impurities.

The invention discloses a high efficient desulfurizing agent with low energy consumption. The desulfurizing agent contains the following components by mass percent: 93-98% of MDEA (methyldiethanolamine), 0.1-2% of desulfurizing defoaming agent, 0.1-2% of MDEA degradation inhibitor, 0.5-4% of organic sulfur adsorbent and 0.1-2% of hydrotropy agent. The novel desulfurizing agent can work under high concentration without foaming, and has high desulfurizing efficiency for H2S (hydrogen sulfide); the desulfurizing agent is also capable of desulfurizing the organic sulfur; the novel desulfurizing agent has large sulfur capacity and high using concentration and is a saving type solvent; and the novel desulfurizing agent has small corrosion to a gasometer, and does not degrade, foam, and discolor easily.

The invention relates to the field of mineral processing engineering, and discloses a method for recovering carbon, iron and zinc from blast furnace gas dust. The method includes the following steps that (1) the gas dust is evenly mixed with a collecting agent and a foaming agent; (2) rough concentration is performed on evenly-mixed pulp, and carbon concentrate and rough tailings are obtained; (3)the collecting agent and the foaming agent are added to the rough tailings for scavenging, and carbon concentrate and scavenging tailings are obtained; (4) the scavenging tailings are ground and fedinto a hydrocyclone for classification, and settling sand and overflow products are obtained; (5) the overflow products are fed into the hydrocyclone for classification, and overflow products and settling sand are obtained; (6) zinc concentrate is obtained from the overflow products, magnetic separation is performed on the settling sand, and iron concentrate is obtained. By the aid of the method,useful components, including the carbon, the iron and the zinc, in the blast furnace gas dust can be recovered simultaneously, and meanwhile, the tailings can be used as cement production raw materials, so that comprehensive utilization of the blast furnace gas dust is realized; and the method has the characteristics of low energy consumption, low pollution, high zinc removal rate and low cost.

The present invention includes a method of allele-specific amplification, utilizing an allele-specific oligonucleotide, at least partially complementary to more than one variant of the target sequence, having an internally-placed selective nucleotide complementary to only one variant of the target sequence wherein the allele-specific oligonucleotide is extended by a nucleic acid polymerase predominantly or exclusively when hybridized to the variant of the target sequence for which it has said complementary selective nucleotide.