Chemical mechanical polishing pads having a consistent pad surface microtexture

a technology of chemical mechanical polishing and microtexture, which is applied in the direction of lapping tools, metal-working equipment, abrasive surface conditioning devices, etc., can solve the problems of limited ability to achieve a consistent microtexture of the pad surface, continuous wear of the skiver blade, and unreliable skiving process

Inactive Publication Date: 2018-03-29
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0006]1. In accordance with the present invention, methods to provide pre-conditioned chemical mechanical (CMP) polishing pads having a CMP polishing layer of one or more polymer, the CMP polishing layer having a radius, and having a surface roughness of from 0.01 μm to 25 μm, Sq, and having a pad surface microtexture effective for polishing comprise grinding the surface of a polymeric, preferably, polyurethane or polyurethane foam, CMP polishing layer, more preferably, a po

Problems solved by technology

These methods have limited capability to achieve a consistent pad surface microtexture required for low defectivity in polished substrates and uniform removal of material from substrates.
In fact, the methods generally create a visible design, such as grooves of a given width and depth and a visible but inconsistent texture.
For example, a skiving process is unreliable for pad surface shaping because the stiffness of the mold changes with mold thickness and the skiver blade continuously wears.
Single point facing techniques have been unable to yield a consistent pad surface microtexture due to continuous tooling wear and lathe positioning accuracy.
Pads made by injection molding processes lack

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical mechanical polishing pads having a consistent pad surface microtexture
  • Chemical mechanical polishing pads having a consistent pad surface microtexture
  • Chemical mechanical polishing pads having a consistent pad surface microtexture

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0062]Trials were conducted with two versions of a VP5000™ CMP polishing layer or pad (Dow Chemical, Midland, Mich. (Dow)) having a 330 mm (13″) radius. The pads had no windows. In Example 1-1, the CMP polishing layer comprised a single porous polyurethane pad which was 2.03 mm (80 mil) thick, and wherein the polyurethane had a Shore D hardness of 64.9. In Example 1-2, the CMP polishing layer comprised a stacked pad having the same polyurethane pad of Example 1-1 stacked using a pressure sensitive adhesive onto a SUBA IV™ sub-pad made from polyester felt (Dow).

[0063]The Comparatives in Examples 1-A and 1-B were the same pads, respectively, as in Examples 1-1 and 1-2, but not treated in accordance with the methods of the present invention: The stacked pad had a SIV sub-pad.

[0064]All pads had 1010 grooves (a concentric circle groove pattern with 0.0768 cm (0.030″) deep×0.0511 cm (0.020″) wide×0.307 cm (0.120″) pitch), and no window.

[0065]The porous abrasive material was a vitrified, p...

example 2

[0074]Trials were conducted with a large 419 mm (16.5″) radius IC1000™ single layer polyurethane pads (Dow) having a Shore D hardness at 61.0, with the Example 2 pad treated in the manner as in Example 1 above, except that the rotary grinder assembly was fed down towards the flat bed platen at a rate of 20.3 μm (0.0007″) increments every 8 pad revolutions and grinding was continued for 5.5 min. The Comparative Example 2-A pad was the same pad as in Example 2 not treated in accordance with the methods of the present invention.

[0075]Trials were run on 14 pads and average results are reported for thickness variation, which was tested, as follows:

[0076]Thickness Variation:

[0077]Was determined using a coordinate-measurement machine across the surface of the polishing pads. A total of 9 discrete measurement locations from pad center to edge were collected per pad. Thickness variation was calculated by subtracting the thinnest measurement from the thickest measurement. Results are shown in...

example 3

[0082]Trials were conducted with large 419 mm (16.5″) radius IK2060H™ single layer polyurethane pads (Dow) having a Shore D hardness at 33.0, with the Examples 3-1, 3-2, 3-3 pads treated in the manner as in Example 2, above, except that the rotary grinder assembly was fed down towards the flat bed platen and stopped at different heights to achieve light (least grinding, stopped after removing 12.7 μm (0.5 mil) of the pad as measured from the highest peak on the pad surface at which the grinding surface first contacts the pad), medium (stopped after removing 50.8 μm (2 mil) of the pad as measured from the highest peak on the pad surface), and full surface microtexturing (most grinding, stopped after removing 101.6 μm (4 mil) of the pad as measured from the highest peak on the pad surface). The Comparative Example 3-A pad was the same pad as in Example 3-1, 3-2, and 3-3 but was not treated in accordance with the methods of the present invention.

[0083]All pads had 1010 grooves (a conce...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention provides pre-conditioned chemical mechanical (CMP) polishing pads comprising a polymer, preferably, a porous polymer having a pad surface microtexture effective for polishing having a series of visibly intersecting arcs on the polishing layer surface, the intersecting arcs having a radius of curvature equal to or greater than half of the radius of curvature of the pad and extending all the way around the surface of the pad in radial symmetry around the center point of the pad wherein the resulting CMP polishing pad has a surface roughness of from 0.01 μm to 25 μm, Sq. The CMP polishing pads may be made by methods comprising grinding the surface of a CMP polishing pad with a rotary grinder to form the surface microtexture.

Description

[0001]The present invention relates to chemical mechanical polishing (CMP) pads having a consistent pad surface microtexture. More particularly, the present invention relates to CMP polishing pads having a CMP polishing layer of one or more polymer, preferably, a porous CMP polishing layer, having a radius, and having a surface roughness of at least 0.01 μm to 25 μm, Sq, or, preferably, from 1 μm to 15 μm, Sq, and having a series of visibly intersecting arcs on the polishing layer surface and having a radius of curvature equal to or greater than half, preferably, equal to half the radius of curvature of the polishing layer.[0002]The manufacture of polishing pads for use in chemical mechanical planarization is known to include the molding and curing of a foamed or porous polymer in a mold having the desired diameter of the final polishing pad, such as a polyurethane, followed by demolding and cutting the cured polymer in a direction parallel to the top surface of the mold to form a l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B24B37/26B24B37/20B24B37/22B24B37/24B24B53/017
CPCB24B37/26B24B37/205B24B53/017B24B37/24B24B37/22B24B37/245B24D3/32
Inventor HENDRON, JEFFREY JAMESSTACK, JEFFREY ROBERT
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap