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The application discloses a preparation process of a lead zirconate titanate (PZT) film layer, a film layer structure and application thereof, and relates to the technical field of piezoelectric material film layer preparation. The preparation process comprises the following steps: S1, forming a low tensile stress silicon nitride layer on the surface of a substrate, which is used for homogenizing the in-plane stress gradient of a wafer; and S2, forming a piezoelectric functional layer on the surface of the silicon nitride layer in a sputtering mode, wherein the piezoelectric thin film material of the piezoelectric functional layer is lead zirconate titanate (PZT). The film layer structure and the preparation process thereof adopt the silicon nitride layer to relieve the thermal mismatch stress of the piezoelectric functional layer system, can improve the piezoelectric constant e31 of the central region of the wafer, and improve the uniformity of the whole wafer.