Preparing method for sapphire touch screen panel
A sapphire, touch screen technology, applied in surface polishing machine tools, manufacturing tools, metal processing equipment, etc., can solve the problems of poor touch screen quality and low yield, and achieve good uniformity, high yield and good wear resistance. Effect
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Embodiment 1
[0032] The preparation method of the sapphire touch screen panel of the present embodiment specifically includes the following steps:
[0033]Step 1, crystal growth; put pure Al in the crucible of crystal growth furnace 2 o 3 Raw material, above the crucible is provided with a rotatable and lifting lifting rod, and the lower end of the lifting rod is clamped with a seed crystal with a C crystal orientation; the crystal growth furnace is vacuumed and a protective gas is introduced, and the temperature is raised to 2200 ° C, so that the Al 2 o 3 Melt, control the liquid surface temperature of the melt to 2055°C, place the seed crystal in Al 2 o 3 The upper surface of the melt is in contact with the melt for 1 hour; after the seed crystal is fully wetted with the melt, the seed crystal is pulled and rotated to achieve necking-shoulder expansion-equal diameter growth; in the necking stage, control The liquid surface temperature of the melt is 2050°C, the seed crystal is pulled...
Embodiment 2
[0044] The preparation method of the sapphire touch screen panel of the present embodiment specifically includes the following steps:
[0045] Step 1, crystal growth; put pure Al in the crucible of crystal growth furnace 2 o 3 Raw material, above the crucible is provided with a rotatable and lifting lifting rod, and the lower end of the lifting rod is clamped with a seed crystal with a C crystal orientation; the crystal growth furnace is vacuumed and a protective gas is introduced, and the temperature is raised to 2100 ° C, so that the Al 2 o 3 Melt, control the liquid surface temperature of the melt to 2055°C, place the seed crystal in Al 2 o 3 The upper surface of the melt makes it contact with the melt for 0.5h; after the seed crystal and the melt are fully wetted, the seed crystal is pulled and rotated to achieve necking-shoulder expansion-equal diameter growth; in the necking stage, Control the liquid surface temperature of the melt to 2050°C, pull the seed crystal up...
Embodiment 3
[0056] The preparation method of the sapphire touch screen panel of the present embodiment specifically includes the following steps:
[0057] Step 1, crystal growth; put pure Al in the crucible of crystal growth furnace 2 o 3 Raw material, above the crucible is provided with a rotatable and lifting lifting rod, and the lower end of the lifting rod is clamped with a seed crystal with a C crystal orientation; the crystal growth furnace is vacuumed and a protective gas is introduced, and the temperature is raised to 2150 ° C, so that the Al 2 o 3 Melt, control the liquid surface temperature of the melt to 2055°C, place the seed crystal in Al 2 o 3 The upper surface of the melt is in contact with the melt for 1 hour; after the seed crystal is fully wetted with the melt, the seed crystal is pulled and rotated to achieve necking-shoulder expansion-equal diameter growth; in the necking stage, control The liquid surface temperature of the melt is 2050°C, the seed crystal is pulle...
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