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Chemical mechanical polishing solution

A technology of chemical mechanics and polishing liquid, which is applied in other chemical processes, chemical instruments and methods, polishing compositions containing abrasives, etc., can solve the problems that the polishing rate and planarization efficiency of dielectric materials cannot be taken into account at the same time, and achieve extended Effects of polishing time, high planarization efficiency, and simplified steps

Pending Publication Date: 2021-06-22
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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Problems solved by technology

[0004] In order to solve the problem that the chemical mechanical polishing fluid in the prior art cannot simultaneously balance the polishing rate and planarization efficiency of the dielectric material when the oxide layer with steps is flattened

Method used

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Embodiment 3

[0045] Preparation method: in this embodiment, the reference example contains 1.2wt% sol-type cerium oxide, and other embodiments and comparative examples then add a certain amount of compound (see Table 5) on the basis of the reference example, and use ammonia water (NH 4 OH) or nitric acid (HNO3) to adjust the pH to 4.5.

[0046] Polishing method: Mirra polishing machine is used to perform polishing test on patterned wafer. The corresponding polishing conditions include: IC1010 polishing pad, the speed of polishing disc (Platten) and polishing head (Carrier) are 93rpm and 87rpm respectively, and the polishing liquid The flow rate was 150 mL / min and the polishing pressure was 5 psi. The TEOS film thickness was measured with a NanoSpec film thickness measurement system (NanoSpec6100-300, Shanghai Nanospec Technology Corporation). Starting at 3mm from the edge of the wafer, measure 49 points at equal intervals on the diameter line. The polishing rate is an average of 49 point...

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Abstract

The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises water, cerium oxide, polyquaternium salt, carboxylic acid containing a benzene ring and polyvinylamine. Only when the polyquaternium salt, the carboxylic acid containing the benzene ring and the polyvinylamine are used together, the real automatic stopping function can be achieved, a blank wafer has the low polishing rate, the high polishing rate is kept when the step height of the patterned silicon wafer is high, the lower the step height is, the better the polishing speed is restrained, and the better the polishing effect is achieved. Therefore, the automatic stop function is realized.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid. Background technique [0002] At present, chemical mechanical polishing (CMP) has become the most effective and mature planarization technology in the manufacturing process of micro-nano devices. In the manufacturing process of micro-nano devices, Interlayer Dielectric-ILD (Interlayer Dielectric-ILD) technology has become the mainstream isolation technology due to its outstanding isolation performance, flat surface morphology and good locking performance. The role of chemical mechanical polishing in the formation of ILD structures is to flatten the stepped oxide layer, and its main polishing performance parameters are polishing rate and planarization efficiency. It is generally more effective to use cerium oxide as polishing particles to increase the polishing rate of dielectric materials, but high polishing rates often le...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02C09K3/14H01L21/31053
Inventor 李守田任晓明贾长征
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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