26 results about "Nano devices" patented technology

The invention discloses a photoresist composition based on metal nanoparticles and application of the photoresist composition. The photoresist composition comprises metal nanoparticles, a photosensitizer, an anti-diffusion agent and a photoresist solvent, wherein the metal nanoparticles are silver nanoparticles, copper nanoparticles and gold nanoparticles. The photoresist composition has good film-forming property and excellent patterning imaging capability, photoetching patterns with different resolutions can be obtained through ultraviolet, electron beam or extreme ultraviolet exposure, and the formed patterns have good conductivity after being subjected to heat treatment and can be directly used for processing micro-nano devices.

The application discloses a preparation and editing method of a magnetic micro-nano robot with in-situ re-editing capability, and belongs to the field of micro-nano devices. The method comprises the following steps: preparing a sacrifice layer by polyvinyl alcohol, spin-coating pNIPAM to prepare a flexible hinge layer by using a photoetching process, and preparing two magnetic driving modules by using SU-8 of pre-mixed nickel nanowires with different diameters, so as to obtain the micro-nano robot after releasing. When re-editing, one of the magnetic driving modules or both of the magnetic driving modules can be selectively magnetized by an external magnetic field, and the in-situ re-editing of the micro-nano robot is completed. The preparation process of the application is simple, the re-editing of the micro-nano robot can be realized by the simple external magnetic field, more movement modes are provided, the problems of the existing micro-nano device movement modes still being rigid and the like are solved, the flexibility is further improved, and the application has important application prospects in the fields of biological medicine, environmental detection and the like.

The invention relates to a chiral perovskite semiconductor circular polarization luminescence enhancement structure and a preparation method and application thereof, and belongs to the technical field of chiral photoelectric semiconductor materials and micro-nano devices. According to the structure, two layers of chiral perovskite semiconductor nanosheets are stacked through a controllable torsion angle to form a homojunction, and the torsion angle ranges from 0 degree to 90 degrees. According to the present invention, by adjusting the interlayer torsion angle, the continuous regulation and the significant enhancement of the circular polarization light emitting polarization degree are achieved, and especially during the parallel stacking (0 degree torsion angle), the circular polarization light emitting polarization degree is improved by 3 times compared with the single nanosheet and the vertical stacking (90 degree torsion angle). The enhancement effect is derived from inter-layer coupling dependent on a torsion angle, spin selective charge transfer is promoted, exciton binding energy is enhanced, and electron-phonon scattering is inhibited. The invention provides an effective way for regulating and controlling the polarization degree through the torsion angle, and is suitable for the fields of circular polarization luminescent devices, spin optoelectronic devices, quantum information processing and the like.

The invention provides a crack-free lithium niobate film based on a Si substrate and a growth method and application thereof, and belongs to the field of ferroelectric film growth methods. According to the crack-free lithium niobate thin film based on the Si substrate, the substrate is selected from a Si substrate, and a target material is selected from congruent lithium niobate ceramic doped with 2.0 mol%-5.0 mol% of erbium and congruent lithium niobate ceramic doped with 5.0 mol% of iron prepared by a solid-phase reaction method, or is selected from congruent lithium niobate crystal doped with 2.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method, or is selected from congruent lithium niobate crystal doped with 5.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method. The lithium niobate thin film shows a lithium niobate (006) characteristic diffraction peak and a lithium-deficient phase LiNb3O8 (-602) characteristic diffraction peak, the surface of the lithium niobate thin film is flat, smooth and crack-free, the problem of surface cracking of a Si-based lithium niobate thin film for a long time is solved, and the lithium niobate thin film can be used for preparing micro-cavities, electro-optical modulators, photoelectric detectors, super-surface micro-nano devices and the like and has wide application prospects. And a foundation is laid for manufacturing and researching an integrated device on a lithium niobate film sheet.

The invention belongs to the technical field of new materials, and provides a TPP elastomer photoresist and a preparation method and application thereof. The TPP (two-photon polymerization) elastomer photoresist comprises polyurethane acrylate (PUA), a diluent, a cross-linking agent and an initiator, the number average molecular weight of the PUA is 2000 to 9000; the diluent is a difunctional acrylate monomer; and the cross-linking agent is an acrylate monomer with more than three functional groups. The preparation method comprises the step of mixing the four compounds according to the corresponding mass percent. The invention also discloses an application of the TPP elastomer photoresist in a micro-nano device. The TPP elastomer photoresist does not contain a solvent, has the characteristics of low viscosity and adjustable mechanical properties, and is suitable for dip printing. After TPP printing and developing, post-curing treatment is not needed, and the microstructure has good self-supporting performance and is suitable for being applied to the fields of microelectronics, biomedicine, optical devices and the like.

The invention provides a luminous rare earth element doped LaOCl flaky crystal material as well as a preparation method and application thereof. The luminous rare earth element in the LaOCl flaky crystal material comprises any one or a combination of at least two of Tb, Eu or Ce; and the crystal domain size of the LaOCl flaky crystal material is not less than 100 microns. The crystal domain size of the LaOCl flaky crystal material is not less than 100 microns, which shows that the wafers grow and are arranged in order, and the integration compatibility of the LaOCl flaky crystal material and micro-nano processing is better; besides, the LaOCl flaky crystal material has an orderly arranged structure, so that the efficiency and convenience in the process of transferring and stacking the nanosheets can be effectively improved, and a reliable basis is provided for heterogeneous integration of the material and a micro-nano device; in addition, the LaOCl flaky crystal material also has relatively high luminous purity; therefore, the LaOCl flaky crystal material has a wider application range in the field of micro-nano photoelectric devices.

This invention discloses a three-dimensional measurement method for micro / nano devices based on an improved focusing evaluation function. The method includes the following steps: processing acquired sequential images, calculating a structure fidelity index, and assembling the processed images into a three-dimensional image matrix; generating gradient response maps based on sliced ​​images in the three-dimensional image matrix, combining the response maps with the structure fidelity index and a noise reduction term to construct an improved focusing evaluation function, obtaining a focusing value sequence; performing a preliminary peak search on the focusing value sequence, constructing a candidate dataset, and calculating a peak quality factor; calculating the comprehensive effective quality based on the selected candidate fitting dataset, and solving for the final depth coordinates of the pixels based on the effective quality; generating an initial sparse point cloud, and using the point cloud to generate a surface consistency index, driving an anisotropic diffusion algorithm and depth iteration, outputting a three-dimensional morphology model and size parameters. This invention improves the depth measurement accuracy and edge details of three-dimensional reconstruction of micro / nano devices.

The application provides a photothermal driving bowl-shaped polydopamine nanomotor and a preparation method thereof, and belongs to the technical field of micro-nano devices, wherein the photothermal driving bowl-shaped polydopamine nanomotor comprises a hollow bowl-shaped structure constructed by polydopamine, and the hollow bowl-shaped structure is obtained by removing polyacrylic acid nanoparticles after polydopamine is polymerized on one side of the polyacrylic acid nanoparticles to form a single-sided asymmetric structure. The photothermal driving bowl-shaped polydopamine nanomotor provided by the application has strong driving capacity, fast movement speed, and an easy-to-functionalize surface, and the preparation method is simple and can be used for macro preparation, so that the photothermal driving bowl-shaped polydopamine nanomotor has a wide application prospect in the fields of environmental governance, micro-nano processing and biological medicine.

The invention discloses a micro-nano device preparation-oriented environmental parameter prediction type industrial cleaning system and a regulation and control method, and the system comprises a multi-mode sensing network which is distributed in a key process area of a clean room and in micro-nano manufacturing equipment, and is used for collecting environmental parameter data of temperature, humidity, particulate matter concentration, air pressure difference and vibration amplitude in real time; the data acquisition and communication unit is in signal connection with the multi-mode sensing network; and the prediction control unit comprises a data processing module, a prediction analysis module, a decision control module and an actuator network. According to the invention, the future environment trend is accurately predicted through the environment parameter prediction model, and the prospective regulation and control instruction is generated based on the prediction result, so that intervention is carried out before the environment parameters substantially exceed the standard, the hysteresis of traditional feedback control is fundamentally eliminated, and the control precision is improved. A more stable environment guarantee is provided for key process steps, and the preparation yield of the micro-nano device is greatly improved.

This invention discloses a semi-flexible sealed composite material beam-membrane-island structure for micro / nano devices and its fabrication method. The invention employs both rigid and flexible materials to construct the beam-membrane-island structure of the micro / nano device. The beam and island structures are made of rigid materials that can be fabricated in micro / nano dimensions, while flexible materials fill the periphery of the beam and island structures. The flexible filling layer acts as a "displacement coordination layer," ensuring a clear mechanical response while maintaining the high modulus of the silicon beam. Simultaneously, the local deformation of the flexible layer absorbs lateral coupling stress, allowing strain fields in different directions to be separated and amplified in the beam / island region. The flexible material forms a stress transition zone between the beam and island, preventing strong stress concentration in the pure silicon beam-island structure under concentrated loads. This invention still uses materials compatible with micro / nano fabrication processes as the main structural material, enabling integration with standard photolithography, reactive ion etching, deep silicon reactive ion etching, anodic bonding processes, through-silicon vias (TSVs), and glass vias, among other micro / nano processes.

The application discloses a preparation method and application of a sidewall two-dimensional electron gas, and belongs to the technical field of oxide electronics and micro-nano devices. The method comprises the following steps: growing a BaTiO3 ferroelectric film on a SrTiO3 substrate; preparing source-drain electrodes by using photolithography and magnetron sputtering; forming a sidewall structure by using photolithography and ion bombardment process, and inducing the formation of a two-dimensional electron gas at a BaTiO3 / SrTiO3 interface; and forming a conductive channel at a domain wall by regulating BaTiO3 ferroelectric polarization through an external electric field. Through the synergistic regulation of the sidewall structure and the ferroelectric domain wall, the spatial controllable distribution of the interface two-dimensional electron gas is realized, the electrons are directionally aggregated in the domain wall region, and thus a stable conductive path is constructed on a nanometer scale. The method has simple preparation process, good repeatability, is compatible with existing thin film growth and micro-nano processing technology, and can be applied to the fields of multi-value storage, reconfigurable logic circuits and neuromorphic computing.

The invention belongs to the technical field of two-dimensional material lubrication, and particularly relates to a regulation and control method for graphene friction force. The preparation method comprises the following steps: performing plasma treatment on a graphene sheet on the surface of a substrate to introduce structural defects to obtain a pretreated graphene sheet; and folding the exposed edge of the pretreated graphene sheet on the surface of the substrate by adopting nano manipulation of an atomic force microscope to obtain a folded pretreated graphene sheet. According to the method, defect structures with different densities are introduced through plasma treatment to weaken and damage a pseudo magnetic field, and effective regulation and control on friction of the edge of the folded graphene are realized. The method provided by the invention is simple to operate, has high regulation and control precision on the friction force of the graphene, and can be widely applied to friction regulation and control of micro-nano devices.

The invention discloses an astigmatic displacement microscopic imaging method and an astigmatic displacement microscopic imaging device for axial sub-nanometer resolution, namely an astigmatic displacement microscope (ADM). The astigmatic displacement microscopic imaging method and the astigmatic displacement microscopic imaging device for axial sub-nanometer resolution are applied to an astigmatic displacement microscope (ADM). The ADM technology is based on the astigmatism measurement principle, has the advantage of optical non-contact, and can simultaneously realize four measurement functions: microscopic three-dimensional shape scanning imaging, displacement measurement, vibration analysis and film thickness measurement. The Z-axis resolution of three-dimensional morphology imaging is about 0.1 nm, and the thickness detection of a monatomic layer of a two-dimensional material and the like can be met; the device can be matched with any objective lens, such as working media of air, water immersion and oil immersion; a fast scanner is adopted to replace a traditional sample displacement table for scanning, and the imaging time of a single image is fast to a second level; and in combination with a normalization circuit, the influence of different sample reflectivity on a measurement signal can be eliminated. The astigmatic displacement microscope can meet the test requirements of application scenes such as micro-nano devices, semiconductors, piezoelectric sensing, material morphology measurement, in-situ surface and interface research, precise displacement measurement, microscopic vibration analysis and the like.

The invention belongs to the field of semiconductor materials and micro-nano manufacturing, and provides a method for improving the elastic limit of micro-nano-scale diamond. According to a diamond micro-nano structure prepared through a traditional method, due to surface defects and an amorphous layer, the mechanical property is far lower than a theoretical value, and the elastic strain and the fracture resistance are limited. According to the method, controllable plasma surface treatment is carried out on the diamond nanostructure processed by a focused ion beam (FIB) at room temperature, the thickness of a surface amorphous carbon layer is accurately regulated and controlled, and the elastic modulus and the elastic strain range are actively regulated. The core of the method is to reduce or optimize interface mismatch of a surface amorphous layer and internal crystalline diamond and relieve the problem of deformation and non-collaboration. After treatment, the ductility of the diamond is improved, the theoretical ultimate tensile strain is approached, the fracture resistance is enhanced, and the multi-field mechanical reliability and working stability are improved. The method is simple in process, mild in condition and high in controllability, and provides support for application of diamond-based micro-nano devices.

The invention relates to the technical field of nano material preparation, and particularly discloses a substrate growth pulling method of an ultra-long few-walled carbon nanotube array. The method comprises the following steps: firstly, pretreating a substrate, loading a zinc-based MOF derivative catalyst and forming a polymer transition layer; then in a reaction environment capable of providing an alternating magnetic field, a gradient electric field, a near-infrared light thermal field and layered gas flow, heating and introducing a carbon source gas in a pulse manner to grow the array, and meanwhile, carrying out on-line monitoring and real-time closed-loop regulation on growth parameters by utilizing a laser Raman spectrum; after the array grows to a preset height, staged gradient stress release lifting is executed, and layered airflow is used for assisting in stripping; and finally, removing the residual catalyst in an oxidizing atmosphere. The carbon nanotube array can be used in the fields of nano devices, composite material reinforcement and the like, and has the advantages of excellent directionality, low defect rate and strong structural integrity. The preparation method provided by the invention can be used for efficiently preparing the high-performance ultra-long few-walled carbon nanotube array.

The invention relates to the technical field of photonic crystal materials and micro-nano devices, in particular to a beam-shaped magnetic photonic crystal, a preparation method of the beam-shaped magnetic photonic crystal and application of a micro-nano device of the beam-shaped magnetic photonic crystal. Each one-dimensional magnetic photonic nano chain is formed by assembling a plurality of magnetic nano particles into a chain, and the magnetic nano particles in the beam-shaped magnetic photonic crystal are arranged into a one-dimensional photonic crystal structure along the axial direction of the beam-shaped magnetic photonic crystal and are arranged into a two-dimensional photonic crystal structure along the radial direction of the beam-shaped magnetic photonic crystal. Compared with a single photon nanometer chain, the beam-shaped magnetic photonic crystal shows larger color spots and unique axial-radial two-way color rendering property, the photonic crystal structural color can be displayed in the axial dimension and the radial dimension, and the beautiful structural color is displayed.

This invention discloses a multifunctional fiber optic electronic system based on D-shaped optical fiber and its fabrication method, belonging to the technical field of fiber optic optoelectronic integration and information functional devices. The system includes a D-shaped optical fiber and various heterogeneous micro / nano devices integrated in situ on the polished side surface of the D-shaped optical fiber. The D-shaped optical fiber is used for optical signal transmission and also serves as an integration substrate. The flat, processable area formed by polishing its side surface is called the polished side surface, which is used to integrate various heterogeneous micro / nano devices. These heterogeneous micro / nano devices are used to realize in-situ signal detection, logic processing, temperature self-monitoring, and wireless energy and signal interaction functions. This overcomes the losses and complexity caused by the traditional "fiber-chip" discrete architecture, significantly improving system integration, energy efficiency, and reliability.

The invention discloses atomic layer deposition equipment and method based on a local direct writing technology. The equipment comprises a deposition cavity for limiting a vacuum environment, a temperature-controllable precise displacement platform, a movable local reaction unit integrated with a micro reaction head array and a micro-area sealing structure, a three-dimensional micro-motion mechanism for driving the local reaction unit to do spatial motion, and a multi-source precursor conveying system. According to the method, the local closed or semi-closed reaction micro-area is formed on the surface of the substrate through the micro-area sealing structure, and the atomic-scale high-quality patterned film is directly drawn according to the preset path under the condition that mask and photoetching are not needed in combination with the alternating pulse time sequence of three-dimensional motion control and atomic layer deposition. According to the method, the flexibility of direct writing type printing is combined with the high-quality thin film growth capacity of atomic layer deposition, the problem that high-resolution and complex patterning deposition is difficult to achieve through a traditional ALD technology is effectively solved, and the method is particularly suitable for flexible manufacturing of multi-layer heterostructures and complex micro-nano devices.

This invention relates to the fields of micro / nano fabrication and micro-assembly technology, specifically to a microneedle array-based mass transfer device and its fabrication method, and a micro / nano device transfer method. The micro / nano device transfer method includes providing a mass transfer device comprising a carrier and a microneedle array. The mass transfer device is moved above the micro / nano device, and near-infrared light irradiation and pressure are applied to the mass transfer device to cause the microneedles to bend. The near-infrared light is removed, and the microneedles are allowed to cool to room temperature. The microneedles then pick up the micro / nano device based on dry adhesion and move it to a target substrate. Patterned near-infrared light is used to irradiate the microneedles, triggering deformation recovery and achieving selective release of the micro / nano device. This solution utilizes the synergy of near-infrared light, photothermal conversion materials, and shape memory polymers to enable the microneedle array to respond rapidly, achieving precise control of the microneedle adhesion force, thereby realizing precise and efficient pickup, mass transfer, and selective release of micro / nano devices.

The invention discloses a multi-level fine overlay method for a complex micro-nano structure, and belongs to the technical field of micro-nano machining. The multi-stage fine overlay method comprises the following steps: firstly, based on a double-layer photoresist system, forming a graphical mask with a precise undercut profile by optimizing the thicknesses of an upper photoresist layer and a lower photoresist layer, spin-coating parameters and a twice independent developing process; then, layer-by-layer overlay alignment is carried out within the alignment precision range of 800 nm to 3 microns through a global alignment mark set preset on the mask mold; and finally, realizing residue-free transfer of the high-precision metal or dielectric film pattern by combining magnetron sputtering and a precise stripping process, and sequentially completing preparation of the multi-layer micro-nano composite structure. According to the method, high-precision integrated manufacturing is guaranteed, meanwhile, the technological process can be simplified, technological compatibility is enhanced, equipment investment and manufacturing cost are reduced, a reliable technical path is provided for batch manufacturing of complex micro-nano devices, and the method has wide application prospects in the fields of integrated optics, MEMS, multifunctional sensors and the like.

This invention provides a tin film, its preparation method, and micro / nano devices. The preparation method of the tin film includes the following steps: (1) fixing a cleaned substrate on the turntable support of an electron beam evaporation equipment; installing an evaporation boat containing tin film material on a turntable between the positive and negative electrodes of the electron gun, and covering the evaporation boat with a shield; (2) evacuating the vacuum chamber, then introducing an inert gas, and then heating the evaporation boat to a preset temperature, the preset temperature being 100-150°C; (3) opening the shield for evaporation when the electron gun beam current reaches the target beam current, the target beam current being 0.02-0.15A; (4) ending the evaporation when the thickness of the tin film reaches the target film thickness. The preparation method of this invention, by bombarding the molten tin film material with an electron beam, can prepare a tin film with good uniformity and no appearance defects, significantly improving the quality of the tin film.

A multi-level fine overlay method for complex micro / nano structures belongs to the field of micro / nano fabrication technology. In this method, firstly, based on a double-layer photoresist system, a patterned mask with a precise undercut contour is formed by optimizing the thickness of the upper and lower photoresist layers, spin-coating parameters, and two independent development processes. Then, layer-by-layer overlay alignment is performed within an alignment accuracy range of 800 nm to 3 μm using a global alignment mark set pre-set on the mask mold. Finally, combining magnetron sputtering and precise lift-off processes, high-precision metal or dielectric thin film patterns are transferred without residue, sequentially completing the fabrication of multi-layer micro / nano composite structures. This invention simplifies the process flow, enhances process compatibility, and reduces equipment investment and manufacturing costs while ensuring high-precision integrated manufacturing. It provides a reliable technical path for the mass production of complex micro / nano devices and has broad application prospects in integrated optics, MEMS, and multifunctional sensors.

The application belongs to the technical field of micro-nano scale thermal measurement, and particularly relates to a thermal conductivity measurement method and a measurement device. The thermal conductivity measurement method comprises the following steps: providing a heat sink, a plurality of micro-nano devices and a sample to be measured, wherein the micro-nano devices have a first thermal resistance, the sample to be measured has a second thermal resistance, the sample to be measured and the heat sink and each contact area form a contact thermal resistance, the first thermal resistance is greater than the second thermal resistance and greater than the contact thermal resistance; applying a heating power to a thermal measurement circuit of a first micro-nano device; obtaining actual contact temperatures of contact areas of the sample to be measured and adjacent second and third micro-nano devices; obtaining actual heat flow powers of a part corresponding to the second and third micro-nano devices flowing through the sample to be measured; calculating a thermal conductivity of the sample to be measured; and calculating the thermal conductivity of the sample to be measured according to the geometric size and the thermal conductivity of the sample to be measured. The application can exclude the influence of the contact thermal resistance, improve the measurement accuracy, and has a simple structure, low cost and is suitable for mass production.

The invention provides an atomic-scale stress dynamic measurement method and system. The method comprises the following steps: acquiring an atomic resolution image of a material interface by using a spherical aberration correction transmission electron microscope (Cs-TEM); automatically positioning an atom center and calculating lattice parameters for the atomic resolution image through a computer vision algorithm; quantifying atomic-scale strain distribution based on a local stress tensor model; in combination with in-situ heating and dynamic observation technologies, the evolution rule of a stress field along with temperature and time is captured in real time. The scheme provided by the invention can be widely applied to reliability optimization of electronic packaging materials, intermetallic compounds and nano devices, and the accuracy of material design and process control is remarkably improved.

An ultra-high frequency vibration measurement device relates to the field of laser coherent detection technology, solving the problems of easy damage to the surface of micro-nano devices and low measurement frequency. The device includes a master-slave laser, a first fiber coupler for coupling the laser emitted by the master laser into the fiber and splitting it into a local oscillator beam and a signal beam. The signal beam and the laser emitted by the slave laser serve as inputs to an optical phase-locked loop (PLL) system. The optical PLL system, a first fiber collimator, a polarizing prism, a transceiver lens, and a vibrating target are sequentially arranged. The echo signal from the vibrating target and the local oscillator beam are transmitted together via a second fiber coupler to a balanced photodetector. The balanced photodetector mixes the echo signal and the local oscillator beam to form a photocurrent signal. A digital signal processing system calculates the target vibration information based on the photocurrent signal and a phase de-phase algorithm. This invention can generate ultra-high frequency dynamic carrier signals from MHz to GHz, and can also measure the vibration characteristics of the target in real time, with a measurement frequency reaching GHz.

This invention discloses a transfer stamp with controllable adhesion and multi-dimensional force sensing. The stamp integrates a driving sensing system within its cylindrical unit. This system has a stool-shaped frame, which is inverted. A driving module for inducing active deformation of the system is located on the outer side of any one "leg" of the stool-shaped frame, and a sensing module for receiving force changes is located on the outer side of each of the remaining "legs." Both the sensing module and the driving module have electrodes positioned at their respective feet. The adhesion force is adjusted by changing the stamp's bending amplitude through regulating the electrical excitation parameters of the driving module. This invention also discloses a method for transfer printing using the aforementioned stamp. This invention features "active bending" and "multi-dimensional force sensing" functions, enabling adjustment of the adhesion force between the stamp and the interface of micro / nano devices, thereby switching between the pickup and release states of the micro / nano devices; it can also instantly determine the pickup and release states of the micro / nano devices.