65 results about "Nano devices" patented technology

The invention provides a three-dimensional micro-nano spherical multi-parameter synchronous mapping method based on a longitude and latitude type scanning track, and belongs to the technical field of micro-nano device and cell surface physical property characterization methods. In combination with an eccentric distance real-time compensation control algorithm, latitude scanning path parameters are established, online compensation of eccentric displacement is realized in the process of rotating along the latitude, and a normal bending deformation signal of a probe micro-cantilever is used as feedback through an upper computer, so that displacement control of a scanning positioning platform is realized. And thus, synchronous scanning imaging of the surface morphology and the nano-mechanical property of the sample is realized. A probe integrated with a protuberant tip structure is used as a micro-force sensor, a novel controllable vector angle single-point servo detection method is combined, a normal bending signal of the probe is used as feedback, and synchronous measurement of the three-dimensional surface topography and the three-dimensional surface mechanical property of a micro-nano sphere sample is realized along a longitude and latitude scanning path.

The invention belongs to the technical field of thermal expansion coefficient measurement, and relates to a micro-scale material thermal expansion coefficient measurement method and system based on in-situ video analysis, and the method comprises the following steps: 1, extracting a micron-sized sample from any position of a target material by using a focused ion beam; 2, recording a dynamic video of the heating deformation process of the sample by using an electron microscope; 3, performing frame-by-frame image processing on the dynamic video, and extracting pixel data of length, width and area of the sample; 4, converting the pixel data into an actual physical size, recording temperature-time data, and associating a video frame with a corresponding temperature value; 5, calculating the thermal expansion coefficient of the material based on the temperature-deformation curve; the problems that an existing thermal expansion coefficient measuring method is complex in operation and insufficient in accuracy and universality are solved, and particularly, higher thermal expansion coefficient measuring precision and reliability are achieved for micro-scale materials; the requirements on high-precision and high-throughput material testing in the fields of modern chips, micro-nano devices and the like can be met.

The invention discloses a bridge type structure micro-bolometer based on a Mn-Co-Ni-O thin film and a preparation method of the bridge type structure micro-bolometer. According to the method, a Mn-Co-Ni-O post-high-temperature annealing process is considered, annealing is carried out on the suspension structure where the sacrificial layer is released, an organic sacrificial layer material release process is compatible, and the problem that cracks are generated in Mn-Co-Ni-O manufacturing due to tension and compression stress of materials of all layers of a substrate at a high temperature is minimized through annealing of the suspension structure; a bridge type structure based on Mn-Co-Ni-O is provided, and the limitation that traditional Mn-Co-Ni-O can only adopt an organic sacrificial layer and back digging to carry out thermal isolation design is eliminated; the F-P resonant cavity resonance absorption structure based on Mn-Co-Ni-O is successfully manufactured, traditional self-absorption based on a Mn-Co-Ni-O thick film is replaced, and the heat capacity of a device is reduced while absorption is enhanced by adopting a thin film optical structure; the applicable scene of the invention can be expanded to all cantilever or film-suspending micro-nano devices, such as inertial sensors, pressure sensors, chemical / biological sensors and optical detectors of other principles.

The invention discloses a double-layer heterostructure device, a design method and application in spin thermoelectric conversion, and belongs to the technical field of nanoelectronics. The design method comprises the following steps: cutting two-dimensional C2N into single-layer C2NNR; based on a single-layer C2NNR, considering the alignment condition of different atoms between an upper layer and a lower layer in a transport period, and constructing b-C2NNR van der Waals heterostructures with different stacking modes; the bl-C2NNR van der Waals heterostructures in different stacking modes are used for respectively building a double-layer heterostructure device; under the condition of zero bias, the temperature of the left electrode and the right electrode of the double-layer heterostructure device and the temperature difference of the left electrode and the right electrode are changed to cause the double-layer heterostructure device to generate thermal driving current, it can be calculated that charge current Ic is restrained, at the moment, the double-layer heterostructure device can conduct spinning thermoelectric conversion, and therefore the material library of low-dimensional nano-electronic devices is expanded. The material has the potential to become one of excellent reserve materials of spinning thermoelectric nano devices.

The invention discloses a novel method for preparing a coralline In2O3 nano material by a low-heat solid-phase precursor method. According to the method, indium nitrate hydrate (In (NO3) 3 * xH2O) and sodium hydroxide (NaOH) are used as raw materials, a precursor is generated through a solid-phase chemical reaction, then calcination treatment is carried out under the low-temperature condition of 300 DEG C, and the In2O3 nanosheet material formed by self-assembly of nanoparticles is obtained after washing and vacuum drying. According to the method, a solvent-free solid-phase reaction system is innovatively adopted, the limitation of an organic solvent in a traditional liquid-phase method is broken through, the contact efficiency of a reaction interface is effectively improved, and the reaction energy consumption is reduced. The preparation method has the characteristics of simple operation steps, high safety coefficient, environmental friendliness, easiness in realization of large-scale production and the like, and has certain technical enlightenment for large-scale preparation of high-end nano devices such as photoelectric catalytic materials and gas sensitive sensor elements.

The invention discloses a photoresist composition based on metal nanoparticles and application of the photoresist composition. The photoresist composition comprises metal nanoparticles, a photosensitizer, an anti-diffusion agent and a photoresist solvent, wherein the metal nanoparticles are silver nanoparticles, copper nanoparticles and gold nanoparticles. The photoresist composition has good film-forming property and excellent patterning imaging capability, photoetching patterns with different resolutions can be obtained through ultraviolet, electron beam or extreme ultraviolet exposure, and the formed patterns have good conductivity after being subjected to heat treatment and can be directly used for processing micro-nano devices.

The application discloses a preparation and editing method of a magnetic micro-nano robot with in-situ re-editing capability, and belongs to the field of micro-nano devices. The method comprises the following steps: preparing a sacrifice layer by polyvinyl alcohol, spin-coating pNIPAM to prepare a flexible hinge layer by using a photoetching process, and preparing two magnetic driving modules by using SU-8 of pre-mixed nickel nanowires with different diameters, so as to obtain the micro-nano robot after releasing. When re-editing, one of the magnetic driving modules or both of the magnetic driving modules can be selectively magnetized by an external magnetic field, and the in-situ re-editing of the micro-nano robot is completed. The preparation process of the application is simple, the re-editing of the micro-nano robot can be realized by the simple external magnetic field, more movement modes are provided, the problems of the existing micro-nano device movement modes still being rigid and the like are solved, the flexibility is further improved, and the application has important application prospects in the fields of biological medicine, environmental detection and the like.

According to the method for rapidly testing the growth tendency of the metal whiskers and growing the metal whiskers in situ, the MAX phase serves as an A metal atom source, the growth tendency of the metal whiskers is rapidly tested, and a new technology for preparing the metal whiskers in a large scale is developed by means of the phenomenon. According to the method, an MAX phase and an alloy matrix form metallurgical bonding through hot pressing, active A atoms are provided for growth of the metal whiskers, and therefore reliable and rapid detection of the growth tendency of the metal whiskers on the to-be-detected alloy is achieved. The innovation and significance of the invention are as follows: (1) A-site atoms provided by the MAX phase are utilized to test the accommodation limit of different alloy components and organization structures to active A atoms, a new rapid and reliable metal whisker growth tendency evaluation technology is developed, and the method has important significance in evaluation of Sn whisker growth problems in electronic connection; and (2) a new technology for in-situ and rapid growth of the metal whiskers in the metal matrix is developed, and a new technical approach is provided for preparation of micro-nano devices such as MEMS (micro-electromechanical systems) and the like.

The invention relates to a chiral perovskite semiconductor circular polarization luminescence enhancement structure and a preparation method and application thereof, and belongs to the technical field of chiral photoelectric semiconductor materials and micro-nano devices. According to the structure, two layers of chiral perovskite semiconductor nanosheets are stacked through a controllable torsion angle to form a homojunction, and the torsion angle ranges from 0 degree to 90 degrees. According to the present invention, by adjusting the interlayer torsion angle, the continuous regulation and the significant enhancement of the circular polarization light emitting polarization degree are achieved, and especially during the parallel stacking (0 degree torsion angle), the circular polarization light emitting polarization degree is improved by 3 times compared with the single nanosheet and the vertical stacking (90 degree torsion angle). The enhancement effect is derived from inter-layer coupling dependent on a torsion angle, spin selective charge transfer is promoted, exciton binding energy is enhanced, and electron-phonon scattering is inhibited. The invention provides an effective way for regulating and controlling the polarization degree through the torsion angle, and is suitable for the fields of circular polarization luminescent devices, spin optoelectronic devices, quantum information processing and the like.

The invention provides a crack-free lithium niobate film based on a Si substrate and a growth method and application thereof, and belongs to the field of ferroelectric film growth methods. According to the crack-free lithium niobate thin film based on the Si substrate, the substrate is selected from a Si substrate, and a target material is selected from congruent lithium niobate ceramic doped with 2.0 mol%-5.0 mol% of erbium and congruent lithium niobate ceramic doped with 5.0 mol% of iron prepared by a solid-phase reaction method, or is selected from congruent lithium niobate crystal doped with 2.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method, or is selected from congruent lithium niobate crystal doped with 5.0 mol% of erbium and congruent lithium niobate crystal doped with 5.0 mol% of iron prepared by a Czochralski method. The lithium niobate thin film shows a lithium niobate (006) characteristic diffraction peak and a lithium-deficient phase LiNb3O8 (-602) characteristic diffraction peak, the surface of the lithium niobate thin film is flat, smooth and crack-free, the problem of surface cracking of a Si-based lithium niobate thin film for a long time is solved, and the lithium niobate thin film can be used for preparing micro-cavities, electro-optical modulators, photoelectric detectors, super-surface micro-nano devices and the like and has wide application prospects. And a foundation is laid for manufacturing and researching an integrated device on a lithium niobate film sheet.

The present invention relates to the technical field of optical MEMS micro-nano devices, and specifically discloses a MEMS Fabry-Perot filter with a dual anti-reflection structure. The filter comprises a microstructure, a driving structure, an upper Bragg reflector, a lower Bragg reflector, a compensation structure, and a substrate, which are arranged in sequence. The lower Bragg reflector has a first low-refractive-index thin film layer, and the compensation structure and the first low-refractive-index thin film layer are made of the same material. The compensation structure and the first low-refractive-index thin film layer have the same thickness. The microstructure and the compensation structure constitute a dual anti-reflection structure. The compensation structure improves the reflectivity of the lower Bragg reflector and simultaneously compensates for the stress of the lower Bragg reflector, thereby increasing the flatness and the utilization rate of the light energy in the Fabry-Perot cavity. The combined effect of the two improves the transmittance of the entire MEMS Fabry-Perot filter transmission spectrum, significantly improving the filtering quality.

The invention belongs to the technical field of new materials, and provides a TPP elastomer photoresist and a preparation method and application thereof. The TPP (two-photon polymerization) elastomer photoresist comprises polyurethane acrylate (PUA), a diluent, a cross-linking agent and an initiator, the number average molecular weight of the PUA is 2000 to 9000; the diluent is a difunctional acrylate monomer; and the cross-linking agent is an acrylate monomer with more than three functional groups. The preparation method comprises the step of mixing the four compounds according to the corresponding mass percent. The invention also discloses an application of the TPP elastomer photoresist in a micro-nano device. The TPP elastomer photoresist does not contain a solvent, has the characteristics of low viscosity and adjustable mechanical properties, and is suitable for dip printing. After TPP printing and developing, post-curing treatment is not needed, and the microstructure has good self-supporting performance and is suitable for being applied to the fields of microelectronics, biomedicine, optical devices and the like.

The present invention discloses a method for arranging one-dimensional magnetic materials over a large area in a solution, the key of which is the preparation of a large-area parallel magnetic field device. The method first utilizes a large-area parallel magnetic field device to orderly adsorb and arrange the one-dimensional magnetic materials dispersed in the solution on a desired substrate in the direction of the parallel magnetic field, and then removes the solution under certain conditions, thereby achieving a directional and orderly arrangement of the one-dimensional magnetic materials over a large area. The method of the present invention is not only simple to operate, the required device is easy to manufacture and low in cost, but also easy to arrange one-dimensional magnetic materials over a large area with controllable thickness on substrates of 4 inches or more. This large-area preparation method will greatly promote the large-scale, mass production of one-dimensional magnetic material micro-nano devices.

The present invention relates to the field of micro-nano manufacturing technology, and in particular to a method and device for forming a spherical cavity inside a silicon-based material, the method comprising the following steps: (S.1) using laser processing to prepare a silicon-based material with a cavity; (S.2) placing the silicon-based material with a cavity prepared in (S.1) in a thermal field for a heat treatment process; (S.3) adding an electric field to the environment described in (S.2) to induce shaping of the silicon-based material, and completing a three-dimensional structure of a spherical cavity inside the silicon-based material. The present invention first heat treats the silicon-based material after laser processing. After the heat treatment, the atomic mobility of silicon atoms in the cavity of the silicon material is greatly improved, and then the electric field is added to further induce shaping of the silicon-based material to promote the formation of the three-dimensional structure inside the silicon-based material. The present invention has the advantages of being simple and controllable during the preparation process, and the performance of micro-nano devices can be effectively improved by this method.

The invention provides a two-photon polymerization initiator as well as a preparation method and application thereof. The two-photon polymerization initiator has a structure as shown in a formula 1. The two-photon polymerization initiator provided by the invention can initiate two-photon polymerization of a photocuring material, has the function of a fluorescent probe, and has significantly enhanced fluorescence emission intensity after the photocuring material is cured, so that a strong fluorescence contrast is formed in a polymerized region and an unpolymerized region; in-situ and on-line monitoring of shapes such as boundary dimensions and internal defects of polymerization products can be realized, processing parameters can be adjusted in time, and the yield and the processing efficiency of micro-nano devices are improved.

The invention belongs to the technical field of photoetching for manufacturing micro-nano devices, and particularly relates to a photoetching alignment system and method based on Morie fringes. The system comprises a template and a substrate, wherein the surfaces of the template and the substrate are respectively provided with coarse alignment marks distributed at four corners and Moire fringe marks distributed at four sides; the illumination imaging unit comprises a camera, a telecentric lens group and a coaxial light source; the displacement mechanism drives the template or the substrate to move. The method comprises the following steps of: coarsely aligning to precision through geometric imaging of a cross mark, overlapping a Morie fringe mark to form a fringe with an amplified displacement effect, calculating deviation through phase analysis, and returning to zero. According to the invention, the optical diffraction limit is broken through, the alignment precision of 10-100 nm is realized, and the complexity and high cost of a traditional interference system are avoided.

The invention provides a luminous rare earth element doped LaOCl flaky crystal material as well as a preparation method and application thereof. The luminous rare earth element in the LaOCl flaky crystal material comprises any one or a combination of at least two of Tb, Eu or Ce; and the crystal domain size of the LaOCl flaky crystal material is not less than 100 microns. The crystal domain size of the LaOCl flaky crystal material is not less than 100 microns, which shows that the wafers grow and are arranged in order, and the integration compatibility of the LaOCl flaky crystal material and micro-nano processing is better; besides, the LaOCl flaky crystal material has an orderly arranged structure, so that the efficiency and convenience in the process of transferring and stacking the nanosheets can be effectively improved, and a reliable basis is provided for heterogeneous integration of the material and a micro-nano device; in addition, the LaOCl flaky crystal material also has relatively high luminous purity; therefore, the LaOCl flaky crystal material has a wider application range in the field of micro-nano photoelectric devices.

The present invention relates to the field of metal micro-nano devices, and specifically to a high-FOM biochemical sensor in the visible light band. The sensor comprises a high- and low-refractive-index dielectric layer hybrid structure composed of an upper low-refractive-index layer and a lower high-refractive-index layer. Multiple high- and low-refractive-index dielectric layer hybrid structures are sequentially connected, with a low-refractive-index substrate disposed at the bottom of the multiple high- and low-refractive-index dielectric layer hybrid structures. A high-refractive-index graphene layer is disposed on top of the high- and low-refractive-index dielectric layer hybrid structures. The graphene layer itself is disposed on top of the high-refractive-index layer. A cavity structure layer is disposed on top of the graphene layer. A periodic subwavelength metal grating array is disposed on top of the cavity structure layer. The sensor's sensitivity and quality factor are adjusted by optimizing the structural parameters of the high / low-refractive-index dielectric layer hybrid structure, the cavity length and width of the cavity structure, the grating width and height, and the period of the periodic subwavelength metal grating array, thereby achieving a high level of comprehensive evaluation indicators.

The invention relates to the technical field of optical MEMS micro-nano devices, and particularly discloses an MEMS Fabry-Perot filter with a double-anti-reflection structure, which comprises a microstructure, a driving structure, an upper Bragg reflector, a lower Bragg reflector, a compensation structure and a substrate which are arranged in sequence, the lower Bragg reflector is provided with a first low-refractive-index thin film layer, and the compensation structure and the first low-refractive-index thin film layer are made of the same material; the thickness of the compensation structure is the same as that of the first low-refractive-index thin film layer; and the microstructure and the compensation structure form a double-anti-reflection structure. The compensation structure improves the reflectivity of the lower Bragg reflector and compensates the stress of the lower Bragg reflector at the same time, so that the flatness is increased, and the utilization rate of light energy in the Fabry-Perot cavity is increased; the transmissivity of the transmission spectrum of the whole MEMS Fabry-Perot filter is improved through the combined action of the two, and the filtering quality is greatly improved.

This invention discloses a three-dimensional measurement method for micro / nano devices based on an improved focusing evaluation function. The method includes the following steps: processing acquired sequential images, calculating a structure fidelity index, and assembling the processed images into a three-dimensional image matrix; generating gradient response maps based on sliced ​​images in the three-dimensional image matrix, combining the response maps with the structure fidelity index and a noise reduction term to construct an improved focusing evaluation function, obtaining a focusing value sequence; performing a preliminary peak search on the focusing value sequence, constructing a candidate dataset, and calculating a peak quality factor; calculating the comprehensive effective quality based on the selected candidate fitting dataset, and solving for the final depth coordinates of the pixels based on the effective quality; generating an initial sparse point cloud, and using the point cloud to generate a surface consistency index, driving an anisotropic diffusion algorithm and depth iteration, outputting a three-dimensional morphology model and size parameters. This invention improves the depth measurement accuracy and edge details of three-dimensional reconstruction of micro / nano devices.

The present invention discloses a reliability optimization method for a flexoelectric cantilever beam structure based on a double-layer nesting method, which belongs to the technical field of flexoelectric effect. The method comprises the following steps: establishing a deterministic optimization design model for a polymorphic flexoelectric cantilever beam; establishing a reliability optimization design model for a polymorphic flexoelectric cantilever beam with parameter uncertainty based on a double-layer nesting method; performing reliability optimization on a polymorphic flexoelectric cantilever beam with parameter uncertainty based on a double-layer nesting method; and solving statistical moments such as mean and variance of reliability optimization constraints based on a Monte Carlo simulation sampling method. The invention provides a reliability optimization method for a flexoelectric cantilever beam structure based on a double-layer nesting method, which can ensure that the structure has optimal structural performance while meeting specified reliability requirements, that is, the optimal flexoelectric cantilever beam structure size can make the flexoelectric effect more significant, making it more potential in the development of micro-nano devices, and having a broader application prospect in the next generation of micro-nano electromechanical system equipment.

The application provides a photothermal driving bowl-shaped polydopamine nanomotor and a preparation method thereof, and belongs to the technical field of micro-nano devices, wherein the photothermal driving bowl-shaped polydopamine nanomotor comprises a hollow bowl-shaped structure constructed by polydopamine, and the hollow bowl-shaped structure is obtained by removing polyacrylic acid nanoparticles after polydopamine is polymerized on one side of the polyacrylic acid nanoparticles to form a single-sided asymmetric structure. The photothermal driving bowl-shaped polydopamine nanomotor provided by the application has strong driving capacity, fast movement speed, and an easy-to-functionalize surface, and the preparation method is simple and can be used for macro preparation, so that the photothermal driving bowl-shaped polydopamine nanomotor has a wide application prospect in the fields of environmental governance, micro-nano processing and biological medicine.

The present invention discloses a spin wave transmission channel reconstruction method, a computer device and a storage medium. The spin wave transmission channel reconstruction method includes injecting current into a magnon waveguide, controlling the current density and duration of the current, and when the Bloch domain wall moves to the target position, removing the current to allow the Bloch domain wall to relax freely. The present invention can control the position of the Bloch domain wall in the magnon waveguide by injecting current into the magnon waveguide with the Bloch domain wall, thereby reconstructing the spin wave channel and realizing the control of the spin wave transmission path by current; since the current injected into the magnon waveguide directly acts on the device itself, no additional wiring is required, the complexity of the device used is low, and the spin wave channel is controlled by injecting current, so it is suitable for nano devices, so that it is easy to obtain good performance such as high integration brought by small-size devices. The present invention is widely used in the field of electronic device technology.

The invention discloses a micro-nano device preparation-oriented environmental parameter prediction type industrial cleaning system and a regulation and control method, and the system comprises a multi-mode sensing network which is distributed in a key process area of a clean room and in micro-nano manufacturing equipment, and is used for collecting environmental parameter data of temperature, humidity, particulate matter concentration, air pressure difference and vibration amplitude in real time; the data acquisition and communication unit is in signal connection with the multi-mode sensing network; and the prediction control unit comprises a data processing module, a prediction analysis module, a decision control module and an actuator network. According to the invention, the future environment trend is accurately predicted through the environment parameter prediction model, and the prospective regulation and control instruction is generated based on the prediction result, so that intervention is carried out before the environment parameters substantially exceed the standard, the hysteresis of traditional feedback control is fundamentally eliminated, and the control precision is improved. A more stable environment guarantee is provided for key process steps, and the preparation yield of the micro-nano device is greatly improved.

The present invention provides a packaging method, device and medium for a wafer-level multi-stage vacuum environment, which relates to the technical field of microsystems and micro-nano devices. The method includes: by setting M types of sealing rings, M types of micro-cavity structures to be packaged corresponding to N devices to be packaged are formed on a pre-set wafer. The first temperature at which the M types of sealing rings are bonded is negatively correlated with the order of the packaging priorities corresponding to the devices to be packaged in the M types of micro-cavity structures to be packaged. At least one first sealing ring is included in the M types of sealing rings, and the first sealing ring includes at least one air vent; according to the order of the packaging priorities corresponding to the devices to be packaged in the M types of micro-cavity structures to be packaged from high to low, packaging operations are sequentially performed on the M types of micro-cavity structures to be packaged to form a multi-stage vacuum environment micro-cavity including M types of sealing structures. The vacuum environment of the multi-stage vacuum environment micro-cavity including M types of sealing structures is the required vacuum environment corresponding to the devices to be packaged in the M types of micro-cavity structures to be packaged pre-set.

The present invention relates to the field of functional materials and micro-nano devices, and discloses a method for photochemical deposition of copper and a method for conformally depositing a copper pattern on the inner wall of a device. The method includes: (I-1) contacting a copper salt, a photoreductant, a neutral multidentate ligand with a first deionized water, respectively, to prepare a copper salt mother liquor, a photoreductant mother liquor, and a neutral multidentate ligand mother liquor; (I-2) mixing the copper salt mother liquor, the photoreductant mother liquor, the neutral multidentate ligand mother liquor, and a second deionized water to prepare a precursor solution; (I-3) adding the precursor solution dropwise onto the surface of a substrate, performing a photochemical reaction using ultraviolet light illumination, and depositing a copper film on the surface of the substrate. The present invention utilizes a photochemical reaction rather than a conventional catalytic reaction to carry out liquid-phase metal deposition. The method of the present invention is simple, can efficiently complete patterned deposition and conformal deposition, and is applicable to complex-shaped substrates and / or the inner wall of a device.

This invention discloses a semi-flexible sealed composite material beam-membrane-island structure for micro / nano devices and its fabrication method. The invention employs both rigid and flexible materials to construct the beam-membrane-island structure of the micro / nano device. The beam and island structures are made of rigid materials that can be fabricated in micro / nano dimensions, while flexible materials fill the periphery of the beam and island structures. The flexible filling layer acts as a "displacement coordination layer," ensuring a clear mechanical response while maintaining the high modulus of the silicon beam. Simultaneously, the local deformation of the flexible layer absorbs lateral coupling stress, allowing strain fields in different directions to be separated and amplified in the beam / island region. The flexible material forms a stress transition zone between the beam and island, preventing strong stress concentration in the pure silicon beam-island structure under concentrated loads. This invention still uses materials compatible with micro / nano fabrication processes as the main structural material, enabling integration with standard photolithography, reactive ion etching, deep silicon reactive ion etching, anodic bonding processes, through-silicon vias (TSVs), and glass vias, among other micro / nano processes.

The invention belongs to the field of preparation of ceramic material micro-nano devices, and particularly relates to a test sample of a ceramic material micro-nano component and a preparation method of the test sample, which are suitable for efficient processing, development and application of ceramic and semiconductor material micro-nano devices. The test sample of the ceramic material micro-nano component comprises a test beam, a base and a connecting part which are formed on the same ceramic material, the test beam is supported on the base through the connecting part, and the connecting part is connected to at least one end of the test beam. By the adoption of the technical scheme, large-size and high-precision ceramic material and semiconductor material micro-nano components can be efficiently prepared. The obtained micro-nano component sample can be used for in-situ scanning electron microscope mechanical property characterization and microstructure observation.

The invention relates to the technical field of nano devices, in particular to a nano device structure and a preparation method thereof, and the nano device structure comprises a substrate, a shallow slot isolation region, a nanosheet channel, a metal gate, a source electrode and a drain electrode; the nanosheet channel is located above the substrate, and the metal gate surrounds the nanosheet channel; the shallow trench isolation regions are positioned on two sides of the substrate; the source and drain electrodes are connected with the nanosheet channel; a side wall structure is arranged between the source and drain electrodes and the metal gate; the source and drain electrode comprises a bottom source and drain electrode and a top source and drain electrode, an isolation layer is arranged between the bottom source and drain electrode and the top source and drain electrode, and a step-shaped structure is formed between the layer where the top source and drain electrode is located and the isolation layer. By preparing the step-shaped complementary field effect nano device structure, the source electrode and the drain electrode can be interconnected upwards, and the unit area of the device is effectively reduced; and the bottom device interconnection line does not influence the channel region, so that the current intensity is not reduced.

The application discloses a preparation method and application of a sidewall two-dimensional electron gas, and belongs to the technical field of oxide electronics and micro-nano devices. The method comprises the following steps: growing a BaTiO3 ferroelectric film on a SrTiO3 substrate; preparing source-drain electrodes by using photolithography and magnetron sputtering; forming a sidewall structure by using photolithography and ion bombardment process, and inducing the formation of a two-dimensional electron gas at a BaTiO3 / SrTiO3 interface; and forming a conductive channel at a domain wall by regulating BaTiO3 ferroelectric polarization through an external electric field. Through the synergistic regulation of the sidewall structure and the ferroelectric domain wall, the spatial controllable distribution of the interface two-dimensional electron gas is realized, the electrons are directionally aggregated in the domain wall region, and thus a stable conductive path is constructed on a nanometer scale. The method has simple preparation process, good repeatability, is compatible with existing thin film growth and micro-nano processing technology, and can be applied to the fields of multi-value storage, reconfigurable logic circuits and neuromorphic computing.