Method for quantizing characterization of thin film surface topography based on multi-dimension system theory

A technology of surface topography and system theory, applied in the field of quantitative representation, can solve problems such as difficult separation and extraction, distortion of measurement information, and insufficient identification, and achieve the effect of detailed decomposition scale

Inactive Publication Date: 2009-07-08
SICHUAN UNIV
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  • Abstract
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  • Claims
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Problems solved by technology

However, the wavelet transform method still has shortcomings, that is, when it performs the decomposition of the scanned image, the decomposition scale is not fine enough, and the interval of dividing the scale level is too wide. Problems such as extracting the micro-relief structure of the surface eventually lead to the inability to fully obtain the metrological information of the undulation structure on the surface of the film at all scales, and even lead to the distortion of the acquired metrological information

Method used

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  • Method for quantizing characterization of thin film surface topography based on multi-dimension system theory
  • Method for quantizing characterization of thin film surface topography based on multi-dimension system theory
  • Method for quantizing characterization of thin film surface topography based on multi-dimension system theory

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Embodiment

[0035] (1) First, a scanning probe microscope is used to scan the surface of the film sample in multiple stages to obtain a series of surface topography images of the film sample with different scan sizes:

[0036] Firstly, a Cu film was deposited on a Si single crystal substrate by radio frequency magnetron sputtering process, and the deposition process parameters were: background vacuum degree 5×10 -5 Pa; sputtering power 100W; substrate temperature 300K; sputtering Ar pressure 0.5Pa; Cu film thickness about 200nm.

[0037] according to figure 1In step 101 of the flowchart, a WET-SPM-9500J3 atomic force microscope (AFM) is used to scan the Cu thin film sample. The lateral limit resolution of the AFM device is 0.2nm, and the pixel value is 512 pixels × 512 pixels. However, considering that the diameter of the probe used is about 10nm, too small image scanning size will cause serious convolution effect and distort the image. Therefore, in this example, the minimum scan size ...

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Abstract

The invention discloses a method for quantifying surface appearance of a representation film based on multi-scale system theory. The method comprises the following steps: firstly using a scanning probe microscope to acquire a surface appearance image of the film through multistage conversion of scanning size, then judging whether the surface appearance of the film has multi-scale characteristics by using a multi-scale system analysis tool, and determining the characteristic size of a fluctuation structure on the surface of the film; then aiming at the surface appearance image with the multi-scale characteristics, using a two-dimensional wavelet packet analytic method to carry out multi-scale layer decomposition on the surface appearance image; comparing decomposed image group components with characteristic size values in size to determine the reconstruction delivery size corresponding to the decomposed image group components, and then selecting and reconstructing the image group components to obtain surface fluctuation structural image of the film with different characteristic sizes; and finally using a surface roughness method to evaluate a reconstructed image to acquire related quantitative information. The method is suitable for exquisite and perfect quantified representation for the surface appearance of a film material in micro/nano devices.

Description

technical field [0001] The invention relates to the technical field of quantitative characterization related to scanning probe microscopy technology, in particular to a new method for quantitatively characterizing the surface morphology of thin films with complex structural features based on multi-scale system theory. Background technique [0002] The continuous miniaturization of devices such as microelectronics, optoelectronics, and micro-electromechanical systems (MEMS) has led to the continuous reduction of the characteristic scale of thin-film materials in devices to the micro-nano scale, and the sharp increase in the ratio of the surface of the thin-film material to its volume. Therefore, the influence of the surface morphology of the thin film on its electrical, mechanical, magnetic and other properties gradually tends to be significant, and may eventually seriously affect the performance and stability of the device. Therefore, how to accurately and perfectly evaluate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N13/10G01B21/20G01B21/30G06T7/00
Inventor 汪渊杨吉军刘波刘春海尹旭
Owner SICHUAN UNIV
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