Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polishing pad and preparation method and application thereof

A polishing pad and polishing layer technology, applied in manufacturing tools, metal processing equipment, abrasives, etc., can solve problems such as increased wear rate and uneven surface of wafers

Active Publication Date: 2020-02-21
HUBEI DINGLONG CO LTD +1
View PDF9 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a novel polishing pad and its Preparation method, application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing pad and preparation method and application thereof
  • Polishing pad and preparation method and application thereof
  • Polishing pad and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-6

[0079] Step (1): the treatment of the isocyanate-terminated polyurethane prepolymer (or prepolymer for short); the specific operations are as follows: 100 parts by mass of the isocyanate-terminated prepolymer obtained by the reaction of toluene diisocyanate and polytetrahydrofuran (The mass percentage of unreacted NCO group is 8.75-9.05%, the above-mentioned concrete numerical value of each embodiment is shown in Table 1 and Table 2) warming up to 80 ℃, degassing under vacuum (-0.095MPa) 2 hours; Then, add different The average diameter of the mass fraction (the content of the hollow microspheres is shown in Table 4) is the hollow microspheres of 20 microns, and the hollow microspheres are evenly dispersed in the prepolymer under stirring to obtain compositions with different microsphere contents; Compositions with different microsphere contents were degassed again under vacuum (-0.095MPa) for 2 hours, and then cooled to 50° C. to obtain prepolymers with different microsphere c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Shore hardnessaaaaaaaaaa
Shore hardnessaaaaaaaaaa
Shore hardnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a polishing pad and a preparation method and application thereof. The polishing pad is provided with combination pieces and a bottom lining, the combination pieces are fixed tothe bottom lining, the combination pieces form a polishing layer together, the polishing layer is provided with a central polishing area, one or more intermediate polishing areas which are sequentially arranged around the central polishing area and outer edge polishing areas which are arranged around the intermediate polishing areas, the central polishing area is circular, the intermediate polishing areas are annular, and the outer edge polishing areas are annular; annular gaps are correspondingly formed between adjacent two polishing areas, and are used for receiving polishing fluid in the polishing process; the shore hardness of the polishing layer is sequentially decreased in the direction from the central polishing area to the outer edge polishing areas; and the shore hardness gradient of the two adjacent polishing areas is 0.5-5 D. The hardness of the polishing pad is decreased gradually in the diameter direction, in the process of mechanical polishing, the wear rate of the polishing pad is basically kept to be same, thus the surface of a to-be-polished crystal plate can be flat, and the flattening efficiency is high.

Description

technical field [0001] The invention relates to a polishing pad and its preparation method and application. Background technique [0002] With the development of semiconductor memory (Memory) and logic devices (Logic device), in order to increase the density of electronic components and reduce production costs, there is a tendency to increase the aspect ratio (Aspect ratio) and increase the number of wire layers in the device manufacturing process. In the manufacturing process of semiconductor integrated circuits, as isolation structures, transistors, metal layers and dielectric layers are stacked layer by layer, the surface of the wafer becomes more and more uneven. Chemical Mechanical Polishing (CMP for short) has become the most effective process method for silicon wafer processing and interlayer planarization of multilayer wiring, and is also a practical technology that can achieve local and full local planarization. The chemical mechanical polishing pad is a circular s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/26B24D11/00
CPCB24B37/26B24D11/003
Inventor 朱顺全车丽媛张季平吴晓茜
Owner HUBEI DINGLONG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com