Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polishing pad and its preparation method and application

A polishing pad and polishing layer technology, which is used in grinding/polishing equipment, manufacturing tools, metal processing equipment, etc., can solve the problems of uneven wafer surface and increased wear rate, and achieve easy operation, efficiency and uniformity improvement. , Solve the effect of high curing temperature

Active Publication Date: 2021-07-30
HUBEI DINGLONG CO LTD +1
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a novel polishing pad and its Preparation method, application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing pad and its preparation method and application
  • Polishing pad and its preparation method and application
  • Polishing pad and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-6

[0079] Step (1): the treatment of the isocyanate-terminated polyurethane prepolymer (or prepolymer for short); the specific operations are as follows: 100 parts by mass of the isocyanate-terminated prepolymer obtained by the reaction of toluene diisocyanate and polytetrahydrofuran (The mass percentage of unreacted NCO group is 8.75-9.05%, the above-mentioned concrete numerical value of each embodiment is shown in Table 1 and Table 2) warming up to 80 ℃, degassing under vacuum (-0.095MPa) 2 hours; Then, add different The average diameter of the mass fraction (the content of the hollow microspheres is shown in Table 4) is the hollow microspheres of 20 microns, and the hollow microspheres are evenly dispersed in the prepolymer under stirring to obtain compositions with different microsphere contents; Compositions with different microsphere contents were degassed again under vacuum (-0.095MPa) for 2 hours, and then cooled to 50° C. to obtain prepolymers with different microsphere c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Shore hardnessaaaaaaaaaa
Shore hardnessaaaaaaaaaa
Shore hardnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a polishing pad, a preparation method and application thereof. The polishing pad has a polishing layer, the polishing layer has a central polishing area, one or more intermediate polishing areas sequentially arranged around the central polishing area, and outer edge polishing areas arranged around the intermediate polishing area, and the The central polishing area is circular, the middle polishing area is annular, and the outer edge polishing area is annular; the Shore hardness of the polishing layer decreases successively along the direction from the central polishing area to the outer edge polishing area. Small, the Shore hardness gradient of two adjacent polishing areas is 0.5‑5D. The hardness of the polishing pad decreases gradually along the diameter direction, and its wear rate remains basically consistent during the mechanical polishing process, so the surface of the wafer to be polished can be flattened, and the flattening efficiency is high.

Description

technical field [0001] The invention relates to a polishing pad and its preparation method and application. Background technique [0002] With the development of semiconductor memory (Memory) and logic devices (Logic device), in order to increase the density of electronic components and reduce production costs, there is a tendency to increase the aspect ratio (Aspect ratio) and increase the number of wire layers in the device manufacturing process. In the manufacturing process of semiconductor integrated circuits, as isolation structures, transistors, metal layers and dielectric layers are stacked layer by layer, the surface of the wafer becomes more and more uneven. Chemical Mechanical Polishing (CMP for short) has become the most effective process method for silicon wafer processing and interlayer planarization of multilayer wiring, and is also a practical technology that can achieve local and full local planarization. The chemical mechanical polishing pad is a circular s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/20B24B37/24B24B37/26B24D18/00
CPCB24B37/20B24B37/24B24B37/26B24D18/0009
Inventor 朱顺全车丽媛张季平吴晓茜
Owner HUBEI DINGLONG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com