Polishing pad and its preparation method and application

A polishing pad and polishing layer technology, which is applied in the direction of manufacturing tools, metal processing equipment, grinding tools, etc., can solve the problems of increased wear rate, uneven wafer surface, etc., achieve uniform fluid distribution, improve efficiency, and reduce polishing scratches Effect

Active Publication Date: 2021-06-04
HUBEI DINGLONG CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a novel polishing pad and its Preparation method, application

Method used

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  • Polishing pad and its preparation method and application
  • Polishing pad and its preparation method and application
  • Polishing pad and its preparation method and application

Examples

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Embodiment 1-6

[0079] Step (1): the treatment of the isocyanate-terminated polyurethane prepolymer (or prepolymer for short); the specific operations are as follows: 100 parts by mass of the isocyanate-terminated prepolymer obtained by the reaction of toluene diisocyanate and polytetrahydrofuran (The mass percentage of unreacted NCO group is 8.75-9.05%, the above-mentioned concrete numerical value of each embodiment is shown in Table 1 and Table 2) warming up to 80 ℃, degassing under vacuum (-0.095MPa) 2 hours; Then, add different The average diameter of the mass fraction (the content of the hollow microspheres is shown in Table 4) is the hollow microspheres of 20 microns, and the hollow microspheres are evenly dispersed in the prepolymer under stirring to obtain compositions with different microsphere contents; Compositions with different microsphere contents were degassed again under vacuum (-0.095MPa) for 2 hours, and then cooled to 50° C. to obtain prepolymers with different microsphere c...

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Abstract

The invention discloses a polishing pad, a preparation method and application thereof. The polishing pad has a combination sheet and a backing, the combination sheet is fixed on the backing, the combination sheet together forms a polishing layer, and the polishing layer has a central polishing area, one or more intermediate polishing areas arranged in turn around the central polishing area, and surrounding middle polishing areas. The outer edge polishing area is set in the polishing area, and the central polishing area is circular, the middle polishing area is annular, and the outer edge polishing area is annular; an annular gap is formed between two adjacent polishing areas, and the annular gap is used to receive Polishing fluid in the polishing process; the Shore hardness of the polishing layer decreases successively along the direction from the center polishing area to the outer edge polishing area; the Shore hardness gradient of two adjacent polishing areas is 0.5‑5D. The hardness of the polishing pad decreases gradually along the diameter direction, and its wear rate remains basically consistent during the mechanical polishing process, so the surface of the wafer to be polished can be flattened, and the flattening efficiency is high.

Description

technical field [0001] The invention relates to a polishing pad and its preparation method and application. Background technique [0002] With the development of semiconductor memory (Memory) and logic devices (Logic device), in order to increase the density of electronic components and reduce production costs, there is a tendency to increase the aspect ratio (Aspect ratio) and increase the number of wire layers in the device manufacturing process. In the manufacturing process of semiconductor integrated circuits, as isolation structures, transistors, metal layers and dielectric layers are stacked layer by layer, the surface of the wafer becomes more and more uneven. Chemical Mechanical Polishing (CMP for short) has become the most effective process method for silicon wafer processing and interlayer planarization of multilayer wiring, and is also a practical technology that can achieve local and full local planarization. The chemical mechanical polishing pad is a circular s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/26B24D11/00
CPCB24B37/26B24D11/003
Inventor 朱顺全车丽媛张季平吴晓茜
Owner HUBEI DINGLONG CO LTD
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