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Polishing pad and preparation method and application thereof

A polishing pad and polishing layer technology, which is applied in the direction of grinding/polishing equipment, manufacturing tools, metal processing equipment, etc., can solve the problems of increased wear rate and uneven wafer surface

Active Publication Date: 2020-02-21
HUBEI DINGLONG CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a novel polishing pad and its Preparation method, application

Method used

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  • Polishing pad and preparation method and application thereof
  • Polishing pad and preparation method and application thereof
  • Polishing pad and preparation method and application thereof

Examples

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Embodiment 1-6

[0079] Step (1): the treatment of the isocyanate-terminated polyurethane prepolymer (or prepolymer for short); the specific operations are as follows: 100 parts by mass of the isocyanate-terminated prepolymer obtained by the reaction of toluene diisocyanate and polytetrahydrofuran (The mass percentage of unreacted NCO group is 8.75-9.05%, the above-mentioned concrete numerical value of each embodiment is shown in Table 1 and Table 2) warming up to 80 ℃, degassing under vacuum (-0.095MPa) 2 hours; Then, add different The average diameter of the mass fraction (the content of the hollow microspheres is shown in Table 4) is the hollow microspheres of 20 microns, and the hollow microspheres are evenly dispersed in the prepolymer under stirring to obtain compositions with different microsphere contents; Compositions with different microsphere contents were degassed again under vacuum (-0.095MPa) for 2 hours, and then cooled to 50° C. to obtain prepolymers with different microsphere c...

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Abstract

The invention discloses a polishing pad and a preparation method and application thereof. The polishing pad is provided with a polishing layer; the polishing layer includes a center polishing zone, one or more middle polishing zones which surround the center polishing zone and are arranged in sequence, and a periphery polishing zone surrounding the middle polishing zones, wherein the center polishing zone is round, the middle polishing zones are annular, and the periphery polishing zone is annular; and the Shore hardness of the polishing layer is decreased in sequence in the direction from thecenter polishing zone to the periphery polishing zone, and the Shore hardness gradient of every two adjacent polishing zones is 0.5-5D. The hardness of the polishing pad is gradually decreased in thediameter direction, the wear rate of the polishing pad keeps constant generally in the mechanical polishing process, thus, the surface of a wafer needing to be polished can be made flat, and the flattening efficiency is high.

Description

technical field [0001] The invention relates to a polishing pad and its preparation method and application. Background technique [0002] With the development of semiconductor memory (Memory) and logic devices (Logic device), in order to increase the density of electronic components and reduce production costs, there is a tendency to increase the aspect ratio (Aspect ratio) and increase the number of wire layers in the device manufacturing process. In the manufacturing process of semiconductor integrated circuits, as isolation structures, transistors, metal layers and dielectric layers are stacked layer by layer, the surface of the wafer becomes more and more uneven. Chemical Mechanical Polishing (CMP for short) has become the most effective process method for silicon wafer processing and interlayer planarization of multilayer wiring, and is also a practical technology that can achieve local and full local planarization. The chemical mechanical polishing pad is a circular s...

Claims

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Application Information

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IPC IPC(8): B24B37/20B24B37/24B24B37/26B24D18/00
CPCB24B37/20B24B37/24B24B37/26B24D18/0009
Inventor 朱顺全车丽媛张季平吴晓茜
Owner HUBEI DINGLONG CO LTD
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