Polishing solution for TSV barrier layer

Abstract

The invention discloses a chemical-mechanical polishing solution for a through silicon via (TSV) barrier layer. The polishing solution comprises at least one grinding material, a compound metal copper corrosion inhibitor, a complexing agent and a silicon nitride regulator. The polishing solution has relatively high silica removal rate and relatively low silicon nitride removal rate, can planarize the barrier layer efficiently and stop the silicon nitride layer to form the through silicon via (TSV), does not produce metal corrosion, and has relatively high defect correction capability and relatively low surface contamination index.

Description

technical field [0001] The invention relates to a polishing liquid, in particular to a chemical mechanical polishing liquid for polishing a TSV barrier layer. Background technique [0002] see Figure 5-7 , in order to improve the performance of IC, further reduce the size, reduce power consumption and cost, small size 3D TSV (TSV, Through-Silicon-Via) packaging technology has emerged as the times require. 3D TSV is the latest technology to realize the interconnection between chips by making vertical conduction between chips and between wafers. Unlike previous IC package bonding and overlay technologies using bumps, TSV can maximize the density of chips stacked in three dimensions and minimize the overall size, greatly improving the performance of chip speed and low power consumption. Its main advantages are: having the smallest size and weight, integrating different kinds of technologies into a single package, replacing long 2D interconnects with short vertical interconnec...

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