Slurry for chemical mechanical polishing of cobalt

a technology of mechanical polishing and slurry, which is applied in the field of microelectronics technology, can solve the problems of copper and cobalt easily suffering from dissolution in acidic solution containing oxidants, ta/tan is not suitable anymore, and the cobalt barrier/adhesion layer stack is not suitable anymor
US20130140273A1Inactive Publication Date: 2013-06-06FUDAN UNIV
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
FUDAN UNIV
Publication Date
2013-06-06
Estimated Expiration
Not applicable · inactive patent

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Abstract

A slurry for chemical mechanical polishing of Co. The slurry comprises components by weight as follows, Inhibitor 0.01-2%, Oxidant 0-5%, Abrasive 0.1-10%, Complexing agent 0.001-10%, and the rest of water. The pH value of the slurries is adjusted to 3-5 by a pH value adjustor. The inhibitor is chosen from one or more kinds of five-membered heterocycle compound containing S and N atoms or containing S or N atom. The oxidant is one or more chosen from H2O2, (NH4)2S2O8, KIO4, and KClO5. The abrasive is one or more chosen from SiO2, CeO2, and Al2O3. The complexing agent is one or more chosen from amino acid and citric acid. The slurry can effectively prevent Co over corrosion and reduce the polishing rate of Co in the polishing process.
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Description

TECHNICAL FIELD

[0001] The present invention relates to microelectronics technology, especially relates to chemical mechanical polishing (CMP) slurries and related applications.BACKGROUND OF THE INVENTION

[0002] With the continuous shrink of feature size in ultra large scale integrated Circuits (ULSI) technology, the size of the copper interconnect structure is getting more and more smaller. To reduce the RC delay, the thickness of barrier or adhesion layer in the copper interconnect structure is getting thinner. The traditional copper barrier / adhesion layer stack—Ta / TaN is not suitable any more, as the resistivity of Ta is relatively high and copper cannot be directly electroplated onto Ta. Compared with Ta, cobalt has lower resistivity and is relatively cheaper. The adhesion between Cu and Co is good. Cu can easily nucleate on Co, also copper can be directly electroplated on cobalt.

[0003] Porous low k dielectrics material has been already used in the current interconnect structures. I...

Claims

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