Integrated grinding pad and its mfg. method

The integrated structure of the elastic support layer and the polishing layer composed of chemically compatible materials solves the problems of low efficiency and complex manufacturing of existing polishing pads in the polishing process, achieves efficient planarization and real-time detection, simplifies the process and reduces the cost. cost.
CN1494986AInactive Publication Date: 2004-05-12KPX CHEM
3 Cites 7 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
KPX CHEM
Publication Date
2004-05-12
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

An integral polishing pad includes an elastic support layer and a polishing layer, which is formed on the elastic support layer and has a higher hardness than the elastic support layer. The elastic support layer and the polishing layer are made from materials chemically compatible with each other so that a structural border between the elastic support layer and the polishing layer does not exist. In addition, the integral polishing pad also includes a transparent region, which is transparent to a light source used to detect the surface state of an object being polished and integrated with the other elements of the integral polishing pad. The integral polishing pad has high planarization efficiency and uniform properties, and thus can be reliably used for polishing. In addition, the integral polishing pad prevents a congestion of a polishing slurry and facilitates delivery of the polishing slurry. The integral polishing pad does not need an adhesive for connecting elements or a process for bonding the elements, thereby simplifying manufacturing processes.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to a polishing pad and a manufacturing method thereof, in particular to a polishing pad in which an elastic support layer and a polishing layer are integrated and a manufacturing method thereof. Background technique

[0002] With the high integration and miniaturization of semiconductors and the multi-layered wiring structure, in the chemical mechanical polishing process introduced for the overall planarization of semiconductor elements, the polishing speed and planarization speed are more important, and these depend on Engineering conditions of grinding equipment, types of grinding liquid, types of pads, etc. In particular, the polishing pad, which is in direct contact with the wafer in the polishing process and is a consumable part, functions as an important factor determining the performance of the polishing process.

[0003] U.S. Patent No. 5,257,478 discloses a polishing pad that elastically compresses and expands th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More