Preparation method of sapphire fingerprint identification panel
A fingerprint identification and sapphire technology, which is applied in character and pattern recognition, acquisition/organization of fingerprints/palmprints, instruments, etc., can solve the problems of low yield rate and poor quality of fingerprint identification panel, and achieve high yield rate and complete chip structure , the effect of reducing production costs
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Embodiment 1
[0034] The preparation method of the sapphire fingerprint recognition panel of the present embodiment specifically includes the following steps:
[0035] Step 1, crystal growth; put pure Al in the crucible of crystal growth furnace 2 o 3 Raw material, above the crucible is provided with a rotatable and lifting lifting rod, and the lower end of the lifting rod is clamped with a seed crystal with a C crystal orientation; the crystal growth furnace is vacuumed and a protective gas is introduced, and the temperature is raised to 2200 ° C, so that the Al 2 o 3 Melt, control the liquid surface temperature of the melt to 2055°C, place the seed crystal in Al 2 o 3 The upper surface of the melt is in contact with the melt for 1 hour; after the seed crystal is fully wetted with the melt, the seed crystal is pulled and rotated to achieve necking-shoulder expansion-equal diameter growth; in the necking stage, control The liquid surface temperature of the melt is 2050°C, the seed cryst...
Embodiment 2
[0047] The preparation method of the sapphire fingerprint recognition panel of the present embodiment specifically includes the following steps:
[0048] Step 1, crystal growth; put pure Al in the crucible of crystal growth furnace 2 o 3 Raw material, above the crucible is provided with a rotatable and lifting lifting rod, and the lower end of the lifting rod is clamped with a seed crystal with a C crystal orientation; the crystal growth furnace is vacuumed and a protective gas is introduced, and the temperature is raised to 2100 ° C, so that the Al 2 o 3 Melt, control the liquid surface temperature of the melt to 2055°C, place the seed crystal in Al 2 o 3 The upper surface of the melt makes it contact with the melt for 0.5h; after the seed crystal and the melt are fully wetted, the seed crystal is pulled and rotated to achieve necking-shoulder expansion-equal diameter growth; in the necking stage, Control the liquid surface temperature of the melt to 2050°C, pull the seed...
Embodiment 3
[0060] The preparation method of the sapphire fingerprint recognition panel of the present embodiment specifically includes the following steps:
[0061] Step 1, crystal growth; put pure Al in the crucible of crystal growth furnace 2 o 3 Raw material, above the crucible is provided with a rotatable and lifting lifting rod, and the lower end of the lifting rod is clamped with a seed crystal with a C crystal orientation; the crystal growth furnace is vacuumed and a protective gas is introduced, and the temperature is raised to 2150 ° C, so that the Al 2 o 3 Melt, control the liquid surface temperature of the melt to 2055°C, place the seed crystal in Al 2 o 3 The upper surface of the melt is in contact with the melt for 1 hour; after the seed crystal is fully wetted with the melt, the seed crystal is pulled and rotated to achieve necking-shoulder expansion-equal diameter growth; in the necking stage, control The liquid surface temperature of the melt is 2050°C, the seed cryst...
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