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Chemico-mechanical polishing liquid

A technology of chemical mechanics and polishing fluid, applied in the direction of polishing compositions, chemical instruments and methods, polishing compositions containing abrasives, etc., can solve problems such as polysilicon depressions, achieve the effect of reducing depressions and improving planarization efficiency

Active Publication Date: 2009-06-17
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the polysilicon removal rate of the chemical mechanical polishing fluid used for polishing polysilicon and silicon dioxide layers in the prior art, which is much higher than the removal rate of silicon dioxide, which easily leads to excessive removal of polysilicon and produces depressions Defects, while providing a chemical mechanical polishing solution with a lower polysilicon removal rate and polysilicon to silicon dioxide removal rate selectivity, which can reduce dishing

Method used

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Embodiment 1～6

[0015] Table 1 shows the polishing liquids 1 to 6 of the present invention. According to the formula in the table, each component is mixed evenly, and the balance is water. Afterwards, potassium hydroxide and nitric acid are used to adjust to a suitable pH value to obtain each polishing liquid. .

[0016] Table 1 Formulations of polishing liquids 1 to 6 of the present invention

[0017]

[0018]

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Abstract

The present invention discloses a chemical machinery polishing solution which contains seat grinding granule and water, and n-vinyl-2-pyrrolidone polymeric compound. The polishing solution provided in the invention has low polycrystalline silicon removal rate, and removal rate selection ratio between polycrystalline silicon and silicon dioxide, which can reduce depression and improve plainness efficiency of polycrystalline silicon significantly.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid. Background technique [0002] For the polishing of polysilicon, it is mainly used in two kinds of chips, one is DRAM and the other is Flash. In the latter application, polishing of silicon dioxide is often involved in the polishing of polysilicon. [0003] In the prior art, the polysilicon layer and the silicon dioxide (such as HDP) layer are mainly polished with an alkaline slurry containing silicon dioxide as abrasive particles, and the removal rate of polysilicon is often much higher than that of silicon dioxide. It is easy to cause excessive removal of polysilicon to generate depressions and affect subsequent processes. [0004] US2003 / 0153189A1 discloses a chemical mechanical polishing liquid for polysilicon polishing and a method of using the same. The polishing liquid includes a polymer surfactant and an abrasive particle selected from alumina and cerium oxide, and the polymer s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/16C09G1/02
Inventor 荆建芬杨春晓
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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