Chemical and mechanical polishing solution

Abstract

The invention relates to polishing solution for chemical and mechanical polishing of silicon. The polishing solution contains water, grinding particles, at least one silicon accelerator and at least one silicon inhibitor. In the polishing solution, by regulating the amount of the silicon accelerator and the amount of the silicon inhibitor, the selection ratio of silicon to silicon dioxide can be regulated, and the planarization efficiency can be improved.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid for polishing polysilicon. Background technique [0002] In the manufacture of integrated circuits, the standard of interconnect technology is increasing, and layers are deposited on top of each other, resulting in the formation of irregular topography on the substrate surface. A planarization method used in the prior art is chemical mechanical polishing (CMP). The CMP process uses a mixture containing abrasives and a polishing pad to polish the surface of a silicon wafer. In a typical chemical mechanical polishing method, the substrate is placed in direct contact with a rotating polishing pad, and a load is used to exert pressure on the backside of the substrate. During polishing, the pad and stage are rotated while maintaining a downward force on the backside of the substrate to apply an abrasive and chemically active solution (comm...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the above-mentioned polysilicon / silicon dioxide selectivity ratio is too high, and the remaining polysilicon in the silicon dioxide butterfly-shaped depression is difficult to remove, and to provide a kind of polysilicon / silicon dioxide with suitable polysilicon for polishing polysilicon CMP

Images