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Process for preparing phase-change memory

A technology of phase-change memory and phase-change materials, which is applied in the field of microelectronics, can solve the problems of slow etching rate, etc., and achieve the effect of easy removal, easy realization, and promotion of development

Inactive Publication Date: 2009-07-15
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Through experiments, we found that the etching rate of oxygen to polystyrene (PS) microspheres is very fast, while other gases used in semiconductor processes such as SF6, CHF3, CF4 and other gases have very slow etching rates on PS microspheres.

Method used

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  • Process for preparing phase-change memory
  • Process for preparing phase-change memory

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Experimental program
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Embodiment 1

[0039] see Figure 1-Figure 9 , the present invention discloses a method for preparing a phase-change memory using high-density ordered self-assembled microspheres as a mask, combined with chemical mechanical polishing, which specifically includes the following steps:

[0040] [Step 1] Silicon wafer substrate cleaning.

[0041] Put the silicon chip into 1# liquid (a mixture of ammonia water, hydrogen peroxide, and deionized water, ammonia water: hydrogen peroxide: deionized water = 1:2:5) and boil for 5 minutes, cool, rinse with deionized water for 3 minutes, and then blow with nitrogen. Dry. Main function: remove oil and large particles on the silicon surface.

[0042] Put the silicon chip into 2# liquid (a mixture of hydrochloric acid, hydrogen peroxide, and deionized water, hydrochloric acid: hydrogen peroxide: deionized water = 1:2:5) to clean, the method is the same as the cleaning method of the above-mentioned 1# liquid; the main function is to remove Metal ions on th...

Embodiment 2

[0071] In this embodiment, the above-mentioned high-density ordered self-assembled microspheres are used as a mask, and the method for preparing a phase change memory in combination with chemical mechanical polishing includes the following steps:

[0072] 1. On the (100)-oriented silicon wafer, a layer of SixN dielectric layer is first prepared by chemical vapor deposition, and its thickness is controlled to be 300-500nm;

[0073] 2. Then use the method of magnetron sputtering to deposit 300nm thick Al / Ti / TiN, the corresponding thickness of each layer is 150nm / 100nm / 50nm, as the bottom electrode material, and magnetron sputtering 200nm thick metal tungsten on the bottom electrode material as marking layer material;

[0074] 3. Using electron beam lithography combined with reactive ion etching to form marking patterns as the basis for subsequent lithography alignment;

[0075] 4. Form a layer of photoresist pattern on the marking material by ultraviolet lithography to protect ...

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Abstract

The invention discloses a method for preparing a phase-change memorizer comprising a step for preparing a bottom medium layer; a step for preparing a bottom layer electrode; a step for preparing a making graph; a step for preparing a marking protection layer; a step for preparing a phase-change material; a step for preparing a mask for etching the phase-change material by using a self-assembly ordered arrangement polystyrol microsphere as the mask etching phase-change material; a step for preparing a phase-change material structure; a substrate flatness treatment step; a top layer electrode drawing-off step and a top layer silicon oxide deposition step. The implementation of the mark by using the assembly method of the invention is not limited by the device, simultaneously the mask area is made as big as possible, while the preparation efficiency of the mask is higher than the conventional method. The preparation method of the phase-change memorizer is useful for preparing the high density and low power consumption phase-change memorizer and prompting the development of the memorizer.

Description

technical field [0001] The invention belongs to the field of microelectronics and relates to a method for preparing a phase-change memory, in particular to a method for preparing a phase-change memory by using high-density ordered self-assembled microspheres as a mask and combining chemical mechanical polishing. Background technique [0002] The basic concept of phase-change memory was first proposed by Ovshinsky in 1968[, which is based on the reversible phase transition of phase-change materials, using its semiconductor high-resistance characteristics in the amorphous state and low-resistance characteristics in the polycrystalline state to realize storage technology. . The development of new phase-change materials and device manufacturing processes has gone through a very long process. In the 1970s and 1980s, limited by the research and processing level of materials and devices, the power consumption and speed of prototype devices could not be compared with conventional se...

Claims

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Application Information

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IPC IPC(8): H01L45/00H01L27/24G11C11/56H01L21/027
Inventor 宋志棠吕士龙
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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