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A cleaning solution and cleaning method for cleaning the backside of a silicon wafer before metallization

A technology of backside metallization and silicon wafers, which is applied in the direction of chemical instruments and methods, cleaning methods using liquids, cleaning methods and utensils, etc., can solve the problems of excessive metal corrosion and the inability to remove the residue of the front peeling film, so as to improve the quality of products rate, reduce the selectivity ratio, and reduce the effect of positive metal corrosion

Active Publication Date: 2016-04-06
FOUNDER MICROELECTRONICS INT
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Problems solved by technology

[0007] The invention provides a cleaning solution and a cleaning method for cleaning the back of a silicon wafer before metallization, which is used to solve the problem of excessive corrosion of the metal on the front side while the natural oxide layer of the silicon wafer is corroded and manual cleaning in the cleaning process. The technical problem of not being able to remove the residual film on the front

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  • A cleaning solution and cleaning method for cleaning the backside of a silicon wafer before metallization
  • A cleaning solution and cleaning method for cleaning the backside of a silicon wafer before metallization

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Embodiment Construction

[0028] In order to make the purpose and technical solution of the present invention more clear and definite, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0029] The invention provides a cleaning solution for cleaning before metallization on the back side of a silicon wafer, wherein the cleaning solution is etching solution BOE and ethylene glycol (molecular formula is: C 2 h 6 o 2 ), the volume ratio of the ethylene glycol to the etching solution BOE is any ratio between 14 / 1 and 18 / 1.

[0030] The etchant BOE is made of 40% NH 4 The F (ammonium fluoride) solution and the 49.2% HF (hydrogen fluoride) solution were mixed in a volume ratio of 7 / 1.

[0031] In order to make the cleaning effect of the solution more obvious, the concentration of the ethylene glycol EG is above 98%.

[0032] When using the prepared cleaning solution to clean the silicon wafer, first pour the mixed cleaning solution in...

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Abstract

The invention discloses a cleaning fluid and a cleaning method of silicon wafer back before metalization. The cleaning fluid and the cleaning method of the silicon wafer back before metalization are applied in the field of semiconductor device production. The cleaning fluid is an inorganic solution for removing the oxide layer of the silicon wafer back and is a mixed solution of an organic solution for slowing down the removal speed, wherein the inorganic solution and the organic solution can dissolve each other and do not react. The silicon wafer is soaked by the cleaning liquid, the silicon wafer is washed after being soaked, and the silicon wafer is spin-dried after being washed. Through cleaning by the cleaning fluid and the cleaning method, the selection ration of metal and silica with a cleaning method in the prior art can be effectively reduced, good product rate of products is greatly improved, and the problems that residues can not be removed after a film is uncovered in front with a manual work way and are not safe are solved.

Description

technical field [0001] The invention relates to the field of discrete production of semiconductor devices, in particular to a cleaning solution and a cleaning method for cleaning the back of a silicon wafer before metallization. Background technique [0002] The metallization process on the back of semiconductor discrete devices is: film attachment, thinning, silicon corrosion, film removal, cleaning, and back metallization. Cleaning silicon wafers prior to backside metallization requires removal of the native oxide layer in the backside, and also requires removal of front side silicon wafer lift-off residues. [0003] At present, the industry mainly uses diluted hydrofluoric acid as the cleaning solution before backside metallization. Due to the high selectivity of the diluted hydrofluoric acid solution itself to the corrosion rate of metal and silicon dioxide, the process While corroding the natural oxide layer on the back side, the metal on the front side is corroded too...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B08B3/08
Inventor 林国胜
Owner FOUNDER MICROELECTRONICS INT
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