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A method of forming a trench

A trench, dry etching technology, applied in radiation control devices, semiconductor devices, electrical components, etc., can solve the problems of polysilicon residues in logic areas and pixel areas, polysilicon over-etching in logic areas, etc.

Active Publication Date: 2021-01-29
晶芯成(北京)科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a trench formation method to solve the problem of polysilicon residue in the logic region and the pixel region, or the problem of polysilicon over-etching in the logic region

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Embodiment Construction

[0031] A method for forming a trench proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0032] figure 1 It is a flowchart of a method for forming a groove according to an embodiment of the present invention. Such as figure 1 As shown, the present invention provides a method for forming a groove, comprising:

[0033] Step S10, providing a substrate, the substrate includes a pixel region and a logic region;

[0034] Step S20, sequentially forming a first oxide layer and a first hard mask layer on the substrate;

[0035] Step S30, performing a first dry etching p...

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Abstract

The present invention provides a method for forming a trench. A substrate is provided, and the substrate includes a pixel region and a logic region; a first oxide layer and a first hard mask layer are sequentially formed on the substrate; a dry etching process, forming a first trench on the substrate of the pixel region, the first trench includes a first opening and a second opening, and the first opening penetrates the first oxide layer and the first hard mask layer, the second opening is an extension of the first opening in the substrate; a first trench stop structure is formed in the first trench; a second A dry etching process, etching the first trench stop structure and the first hard mask layer on the logic region to form a third opening and a fourth opening; performing a third dry etching process, the The third opening extends downward to form a fifth opening, and the fourth opening extends downward into the substrate to form a second trench.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a trench. Background technique [0002] Image sensors usually include a logic region and a pixel region. In the existing STI (shallow trench isolation) process, different STI formation methods are used in the logic region and the pixel region, wherein the STI (shallow trench isolation) of the pixel region The isolation) depth is usually shallow to avoid the impact of dry etch residual plasma on the photoelectric conversion performance of the pixel area, while the STI in the logic area needs to be etched twice to reach a deeper depth. Specifically, first, the logic area and the pixel area are etched through the first dry etching process to obtain two STI trenches of the first depth; The STI trench of the first depth is etched to obtain the STI trench of the second depth (also called STI extended trench or deep trench isolation); then, in the pixel area...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/762H01L27/146
CPCH01L21/76229H01L27/14683
Inventor 陶磊王厚有冯永波蔡明洋陈文俊
Owner 晶芯成(北京)科技有限公司
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