The invention discloses a double-side growth four-junction solar cell with a reflecting layer and a preparation method thereof, and the solar cell comprises a GaAs substrate; the GaAs substrate is an n-type GaAs single-crystal slice that is polished in two sides; a GaAs buffer layer, a first tunnel junction, a AlGaAs/GaInAs DBR reflecting layer, a GaInNAs sub-cell, a second tunnel junction, a AlAs/AlGaAs DBR reflecting layer, a GaAs sub-cell, a third tunnel junction, a GaInP sub-cell, an ohmic contact layer, an antireflection coating, and a front electrode grow on the upper surface of the GaAs substrate from top to bottom; a Ga1-zInzP strain buffer layer, a Ga1-xInxAs sub-cell and a back electrode are provided on the lower surface of the GaAs substrate in order. According to the invention, photon absorption efficiency can be raised; at the same time, the advantages of the four-junction solar cell can play their roles; the integral open-circuit voltage and a fill factor of the GaAs multi-junction cell can be raised; and the photoelectric conversion efficiency of the cell can be improved finally.