80results about How to "Lower bonding temperature" patented technology

A paste including metal or metal alloy particles (which are preferably silver or silver alloy), a dispersant material, and a binder is used to form an electrical, mechanical or thermal interconnect between a device and a substrate. By using nanoscale particles (i.e., those which are less than 500 nm in size and most preferably less than 100 nm in size), the metal or metal alloy particles can be sintered at a low temperature to form a metal or metal alloy layer which is desired to allow good electrical, thermal and mechanical bonding, yet the metal or metal alloy layer can enable usage at a high temperature such as would be desired for SiC, GaN, or diamond (e.g., wide bandgap devices). Furthermore, significant application of pressure to form the densified layers is not required, as would be the case with micrometer sized particles. In addition, the binder can be varied so as to insulate the metal particles until a desired sintering temperature is reached; thereby permitting fast and complete sintering to be achieved.

A paste including metal or metal alloy particles (which are preferably silver or silver alloy), a dispersant material, and a binder is used to form an electrical, mechanical or thermal interconnect between a device and a substrate. By using nanoscale particles (i.e., those which are less than 500 nm in size and most preferably less than 100 nm in size), the metal or metal alloy particles can be sintered at a low temperature to form a metal or metal alloy layer which is desired to allow good electrical, thermal and mechanical bonding, yet the metal or metal alloy layer can enable usage at a high temperature such as would be desired for SiC, GaN, or diamond (e.g., wide bandgap devices). Furthermore, significant application of pressure to form the densified layers is not required, as would be the case with micrometer sized particles. In addition, the binder can be varied so as to insulate the metal particles until a desired sintering temperature is reached; thereby permitting fast and complete sintering to be achieved.

The present invention provides a submount that allows a semiconductor light-emitting element to be attached with a high bonding strength.

A submount 3 is equipped with a substrate 3 and a solder layer 8 formed on a primary surface 4f of the substrate 4. The density of the solder layer 8 is at least 50% and no more than 99.9% of the theoretical density of the material used in the solder layer 8. The solder layer 8 contains at least one of the following list: gold-tin alloy; silver-tin alloy; and lead-tin alloy. The solder layer 8 before it is melted is formed on the substrate 4 and includes an Ag film 8b and an Sn film 8a formed on the Ag film 8b. The submount 3 further includes an Au film 6 formed between the substrate 4 and the solder layer 8.

A bonding agent comprises a flux containing either calcium aluminate or calcium oxide and aluminum oxide and containing less than 5 wt % rare-earth elements; and aluminum nitride powder.

The invention discloses an aqueous boron nitride coating capable of binding at a low temperature and being used at a high temperature. The coating is prepared from 15-60 wt% of hexagonal boron nitride, 2-15 wt% of a composite high temperature binder, 1 wt% of carboxymethyl cellulose, 0.5 wt% of a thickener, 1 wt% of cobalt aluminate, 0.2 wt% of isooctanol, and the balance is demineralized water. Apreparation method of the coating comprises the following steps: mixing and stirring carboxymethyl cellulose used as a dispersant, the high-temperature binder, the thickener, cobalt aluminate used asa high-temperature pigment and demineralized water at a normal temperature to form a uniform solution, adding the hexagonal boron nitride and isooctanol used as a defoamer to the solution, and performing stirring until a uniform system is formed. The coating adopts an aqueous system, has no harmful substance volatilization during use, is clean and environmentally friendly, has good adhesion, anddoes not crack or spall in order to effectively block direct contact between a metal melt and the surface of a refractory material. Additionally, the coating has excellent stability and suspension capacity, and the stability and the suspension capacity do not change under high dilution.

A composition including an aromatic polyester and a copolyester having a lower melting point than the aromatic polyester. The aromatic polyester and the copolyester can be blended together to form fibers and fibrous webs. The composition can be thermally bonded at a temperature below the melting point of the aromatic polyester.

The invention discloses a low temperature solid state bonding method through a surface micro-nano structure. The low temperature solid state bonding method through the surface micro-nano structure comprises choosing two or more elements to be bonded with matching electrical interconnecting pads, wherein every two elements forms a to-be-boned couple; forming fiber-shaped nano silver metal layers on pads on one side of the to-be-boned couples; forming a metal layer of a micron size cone array structure on the pads of the other sides of the to-be-boned couples; aligning pads on the surfaces of the to-be-boned couples, and heating contact areas to a certain temperature lower than a metal melting point and meanwhile applying pressure to one or two sides of the to-be-boned couples and maintaining the state for a certain period to enable the fiber-shaped nano silver metal layers to be in solid state bonding with the metal layers of the micron size cone array structure. According to the low temperature solid state bonding method through the surface micro-nano structure, the conductivity and the electrical conductivity are higher, temperature of thermocompression bonding can be greatly reduced and bonding strength is improved.

The invention relates to a method for producing low-temperature circle sheet micro gas box, which is characterized in that: the benzocyclobutene is used to process material linkage with humid etching or dry etching technique of semi-conductor in 250Deg. C, to realize the circle sheet air-tightness sealing linkage of chip-level gas box. The invention comprises a atom gas box containing a chip-level atom clock gas box, a high-precision magnetic field sensor gas box, a atom feedback glimmer frequency stabilizer; a atom gas box containing a atom light filter, with glimmer Fabry-Perot chamber. The linked BCB glue is in 0.2ª–m thickness, the air-tightness of sealed He gas can reach 2.1-5.9X10-4Pa cm3/s, and the linkage strength is higher than 4.65MPa, while the thermal cycle reliability can fully reach the packing standard of micro electric device.

The present invention relates to a laser lift-off method to transfer the GaN liner by using a metal transition layer, in particular to a method of bonding silicon and GaN by using the metal transition layer and transferring GaN on a sapphire liner to a Si liner by combining the laser lift-off technology; and provides a method for transferring the GaN liner by using the metal transition layer. The Si liner is sputtered with Ti and Au in sequence to form a silicon chip sputtered with Ti and Au; GaN on the sapphire liner is sputtered with Ni and Au in sequence to obtain a GaN chip sputtered with Ni and Au; the silicon chip and the GaN chip are jointed front to front and then put into a bonding machine under 100 to 200 DEG C. After pre-bonding, the temperature of the bonding machine is raised to 200 to 600 DEG C. Then, the bonding machine anneals and a GaN/metal/Si bonded chip forms. After that, the GaN/metal/Si bonded chip gets adhesively connected onto a glass piece and fixed on an electric-driven platform. Laser wave with 365nm above are to radiate the bonded piece from one side of the sapphire.

The invention relates to a high-purity coating type polycrystalline silicon crucible, which comprises a crucible body, wherein a plurality of concave pits or annular grooves are uniformly distributed on the surface of the crucible body; a first nitriding layer, a second oxidation layer and a third nitriding layer are sequentially attached to the surface; according to the first nitriding layer, whey type silicon nitride coats the surface of the crucible body provided with uniformly distributed concave pits or annular grooves in a brush coating mode; the second oxidation layer is powder silicon oxide; the powder silicon oxide is spayed onto the surface of the whey type first nitriding layer which is not coagulated in a spraying mode; the second oxidation layer forms particle type on the surface of the first nitriding layer; the third nitriding layer is mist silicon nitride; the mist silicon nitride is sprayed and coated on the surface of the second oxidation layer in a spray coating mode until the particles of the second oxidation layer are covered; the third nitriding layer forms a smooth surface. The crucible has the characteristics that the coating coverage capability is high; the stability is high; a coating layer has a high isolation degree; the crucible body can be prevented from participating in the reaction in the polycrystalline silicon preparation process, and the like.

The invention discloses a copper nanorod based copper-tin-copper bonding process and structure. The process comprises the following steps of sequentially depositing an insulation layer, an adhesion layer and a seed layer on the surface of a substrate; spin-coating a layer of photoresist on the seed layer, and fabricating round holes in the photoresist; electroplating copper in the round holes to obtain copper convex points; removing the photoresist, and removing the exposed seed layer and the exposed adhesive layer; spin-coating the photoresist on the surfaces and the peripheries of the copper convex points, and exposing the upper surfaces of the copper convex points; electroplating tin convex points on the copper convex points of one of two substrate units obtained according to the above steps, and removing the photoresist; depositing copper nanorods on the copper convex points of the other substrate unit, and removing the photoresist; and bonding the two substrate units by a hot-pressing mode. The copper-tin-copper bonding structure is acquired according to the bonding process. According to the bonding process and the bonding structure, the copper nanorods are applied to copper-tin-copper bonding, the bonding temperature can be effectively reduced, and a tight bonding surface is obtained; and the preparation process is simple and controllable, is low in cost, and has great application value.

A method of manufacturing an electronic device includes preparing a lid having a seal hole, a package having a seam ring (metalization portion) and constituting an internal space along with the lid, and a crystal vibrating piece (electronic component), mounting the crystal vibrating piece in the package, placing the lid on the package such that the seal hole and the seam ring overlap each other in plan view, seam-welding the outer circumferential portion of the lid and the package, and irradiating an energy beam to bond the seal hole and the seam ring and sealing the seal hole and the internal space.

The invention relates to a high-purity coating type polycrystalline silicon crucible and a brushing method of a coating of the high-purity coating type polycrystalline silicon crucible. The high-purity coating type polycrystalline silicon crucible comprises a crucible body, wherein a plurality of pit or annular grooves are uniformly formed in the surface of the crucible body, and the surface of the crucible body is sequentially adhered with a first nitration layer, a second oxidization layer and a third nitration layer; the surface of the crucible body is brushed with the whey-state first nitration layer, powdery silicon oxide of the second oxidization layer is ejected to the surface of whey, vaporous silicon nitride is sprayed to the surface of the second oxidization layer until particles of the second oxidization layer are covered, and a smooth surface is formed on the third nitration layer. The high-purity coating type polycrystalline silicon crucible and the brushing method have the characteristics that the coating is strong in covering capacity and high in stability and isolation degree, and the crucible body is prevented from reacting during the preparation of polycrystalline silicon.

The invention discloses an inter-chip interconnection structure, a manufacturing method of the inter-chip interconnection structure and a packaging structure. The inter-chip interconnection structure comprises a substrate, and first bonding bumps formed on the substrate, and is characterized by also comprising a first three-dimensional nanostructure which is deposited on the first bonding bumps and has the conductivity. Therefore, continuous reduction of an interlayer pitch can be achieved, the bonding temperature is reduced and the integration level is improved.

The invention discloses a preparation method of an electron beam sensitive brittle material transmission electron microscope sample. The preparation method comprises the following steps: A, preparinga sheet sample; B, carrying out water milling pre-thinning on the sheet sample; C, performing low-temperature ion sputtering thinning on the pre-thinned sheet sample; and D, carrying out carbon spraying treatment on the surface of the sheet sample subjected to low-temperature ion sputtering thinning, so as to deposite a layer of amorphous carbon film on the surface of the sheet sample. According to the method, measures such as liquid nitrogen cooling, carbon spraying treatment and the like are adopted, so that the influence of adverse factors such as charge accumulation and the like on the microstructure of the sample in the TEM sample preparation process is reduced.