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3results about How to "Lower bonding temperature" patented technology

CMOS-mems integrated pressure sensor and its manufacturing process

The application provides a CMOS-MEMS integrated pressure sensor and a preparation process thereof. The pressure sensor comprises a bonded MEMS wafer and a CMOS wafer; a bonding sealing area and a PAD vertical interconnection structure in the bonding sealing area are arranged between the MEMS wafer and the CMOS wafer; the bonding sealing structure is formed by eutectic bonding of a metallization layer and a metal solder ball formed in corresponding bonding areas of the two wafers, and the bonding sealing structure surrounds a sensitive element to form a sealed cavity; the PAD vertical interconnection structure comprises conductive bumps respectively formed on the two wafers, the two conductive bumps are aligned with each other and bonded, and electrical interconnection between the MEMS wafer and the CMOS wafer is realized. The electrical interconnection of the pressure sensor realizes monolithic integration, not only improves the problems of increased signal transmission loss, reduced detection precision caused by additional parasitic resistance, capacitance and inductance introduced by wire bonding, and external noise interference, but also improves the service life and reliability, and reduces the size of the chip.
Owner:ZIBO PIONEER INTELLIGENT SENSING TECHNOLOGY CO LTD

Semiconductor package device

ActiveCN114050141BImprove subsidencelower bonding temperature
The present disclosure relates to a semiconductor packaging device. The semiconductor packaging device comprises a circuit layer, a pad is arranged on the surface of the circuit layer, a metal particle layer is arranged on the surface of the pad; an electronic element is arranged on the circuit layer, an active surface is electrically connected to the pad by a wire, one end of the wire is bonded to the metal particle layer. By bonding one end of the wire to the metal particle layer, the bonding temperature when the wire is electrically connected to the pad is reduced, thereby improving the problem of pad sagging caused by the bonding temperature softening the dielectric material of the circuit layer when the wire is directly combined with the pad.
Owner:ADVANCED SEMICON ENG INC

Polyphenyl ether / polystyrene foam formed body as well as preparation method and application thereof

PendingCN121949870Alower bonding temperatureMeet the needs of industrial productionPolymer sciencePlasticizer
The invention relates to a polyphenyl ether / polystyrene foam forming body as well as a preparation method and application thereof, and belongs to the technical field of foaming. The invention provides a preparation method of a polyphenyl ether / polystyrene foam formed body. The preparation method comprises a modification step, a foaming step and a bonding step, in the modification step, polyphenyl ether, a plasticizer and an antioxidant are blended and granulated to obtain modified polyphenyl ether particles; in the foaming step, the modified polyphenyl ether particles are subjected to rapid pressure relief foaming, and polyphenyl ether bead foam is obtained; in the bonding step, polyphenyl ether bead foam, expandable polystyrene foam and water are mixed and then heated, and a polyphenyl ether / polystyrene foam formed body is obtained. According to the preparation method, a first-foaming and second-mixing strategy is adopted, compared with an existing first-mixing and second-foaming strategy, the preparation method does not need to depend on limited molds and water vapor molding, the bonding temperature of the polyphenyl ether bead foam and the expandable polystyrene foam is remarkably reduced, and the requirement of industrial production can be completely met.
Owner:SHINCELL NEW MATERIAL CO LTD