5results about How to "Lower bonding temperature" patented technology

The application provides a CMOS-MEMS integrated pressure sensor and a preparation process thereof. The pressure sensor comprises a bonded MEMS wafer and a CMOS wafer; a bonding sealing area and a PAD vertical interconnection structure in the bonding sealing area are arranged between the MEMS wafer and the CMOS wafer; the bonding sealing structure is formed by eutectic bonding of a metallization layer and a metal solder ball formed in corresponding bonding areas of the two wafers, and the bonding sealing structure surrounds a sensitive element to form a sealed cavity; the PAD vertical interconnection structure comprises conductive bumps respectively formed on the two wafers, the two conductive bumps are aligned with each other and bonded, and electrical interconnection between the MEMS wafer and the CMOS wafer is realized. The electrical interconnection of the pressure sensor realizes monolithic integration, not only improves the problems of increased signal transmission loss, reduced detection precision caused by additional parasitic resistance, capacitance and inductance introduced by wire bonding, and external noise interference, but also improves the service life and reliability, and reduces the size of the chip.

The present disclosure relates to a semiconductor packaging device. The semiconductor packaging device comprises a circuit layer, a pad is arranged on the surface of the circuit layer, a metal particle layer is arranged on the surface of the pad; an electronic element is arranged on the circuit layer, an active surface is electrically connected to the pad by a wire, one end of the wire is bonded to the metal particle layer. By bonding one end of the wire to the metal particle layer, the bonding temperature when the wire is electrically connected to the pad is reduced, thereby improving the problem of pad sagging caused by the bonding temperature softening the dielectric material of the circuit layer when the wire is directly combined with the pad.

The invention discloses a method for obtaining atomic-level cleanliness of a GaAs photocathode, comprising low-temperature thermal cleaning, ion stripping and atomic hydrogen reduction, etc., so as to obtain an activated surface with atomic-level cleanliness. The specific steps and principles are as follows: S1: low-temperature thermal cleaning: low-temperature thermal cleaning adopts a radiation heating method, and generates thermal radiation by heating a heating wire. The thermal radiation passes through AVG glass and irradiates the GaAs epitaxial layer, so as to heat it. By adopting the above scheme, product performance can be significantly improved and material cost can be reduced. Low-temperature thermal cleaning is adopted in cost control. On the one hand, the requirements for AVG glass in the GaAs photocathode are reduced, so that 7056 glass with higher cost performance can be adopted as a substitute, and the single material cost is reduced by about 50%; on the other hand, 7056 glass is adopted, and its bonding temperature is lower, thereby reducing the requirements for the bonding process and improving the qualified rate of bonding.

The invention relates to a polyphenyl ether / polystyrene foam forming body as well as a preparation method and application thereof, and belongs to the technical field of foaming. The invention provides a preparation method of a polyphenyl ether / polystyrene foam formed body. The preparation method comprises a modification step, a foaming step and a bonding step, in the modification step, polyphenyl ether, a plasticizer and an antioxidant are blended and granulated to obtain modified polyphenyl ether particles; in the foaming step, the modified polyphenyl ether particles are subjected to rapid pressure relief foaming, and polyphenyl ether bead foam is obtained; in the bonding step, polyphenyl ether bead foam, expandable polystyrene foam and water are mixed and then heated, and a polyphenyl ether / polystyrene foam formed body is obtained. According to the preparation method, a first-foaming and second-mixing strategy is adopted, compared with an existing first-mixing and second-foaming strategy, the preparation method does not need to depend on limited molds and water vapor molding, the bonding temperature of the polyphenyl ether bead foam and the expandable polystyrene foam is remarkably reduced, and the requirement of industrial production can be completely met.

The present invention relates to a micro optoelectronic device and a preparation method thereof, the preparation method comprising forming a first bonding dielectric layer on a light-emitting wafer, opening a first opening at a position corresponding to a first electrode of the light-emitting wafer in the first bonding dielectric layer, forming a first bonding metal block on the first electrode, and the first opening surrounding the first bonding metal block; forming a second bonding dielectric layer on a driving wafer, opening a second opening at a position corresponding to a second electrode of the driving wafer in the second bonding dielectric layer, forming a second bonding metal block on the second electrode, and the second opening surrounding the second bonding metal block; directly bonding the second bonding metal block to the first bonding metal block and directly bonding the second bonding dielectric layer to the first bonding dielectric layer so that the light-emitting unit is bonded to the driving circuit in correspondence; and removing the first growth substrate to expose the light-emitting unit. In the above manner, hybrid bonding reduces bonding temperature, enhances bonding strength, and reduces process difficulty and cost.