Nanoscale metal paste for interconnect and method of use

Abstract

A paste including metal or metal alloy particles (which are preferably silver or silver alloy), a dispersant material, and a binder is used to form an electrical, mechanical or thermal interconnect between a device and a substrate. By using nanoscale particles (i.e., those which are less than 500 nm in size and most preferably less than 100 nm in size), the metal or metal alloy particles can be sintered at a low temperature to form a metal or metal alloy layer which is desired to allow good electrical, thermal and mechanical bonding, yet the metal or metal alloy layer can enable usage at a high temperature such as would be desired for SiC, GaN, or diamond (e.g., wide bandgap devices). Furthermore, significant application of pressure to form the densified layers is not required, as would be the case with micrometer sized particles. In addition, the binder can be varied so as to insulate the metal particles until a desired sintering temperature is reached; thereby permitting fast and complete sintering to be achieved.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention generally relates to materials used for interconnecting electronic devices and, particularly, devices which either generate high temperatures during use or devices which are used in high temperature applications. Furthermore, the invention is generally related to a fabrication method which reduces or eliminates the need for high pressure application during fabrication of an interconnection, such as during die attach. [0003] 2. Background Description [0004] All semiconductor chips have to be fastened or attached to a substrate to function in an electronic product. The state-of-the-art technology for interconnecting these chips typically uses a lead or lead-free solder alloy, or a conductive polymeric glue, such as an epoxy. However, these materials have poor thermal properties and do not dissipate the heat generated by the chips. They also have poor electrical properties and fail to effectively ...

AI Technical Summary

Benefits of technology

[0008] By using metal particles in the nanoscale range, it is possible to both reduce the bonding temperature (i.e., the sintering temperature in the context of the present invention), and to eliminate or reduce the need for high applied pressure. Without the need for high applied pressure, it is thus possible to make use of existing hybrid microelectronics processing techniques and fabrication equipment and, therefore, enable mass manufacturing of such components. The nanopowder of the present invention can be prepared using known techniques, or purchased directly at a price comparable to that that of micron-size powder. A dispersant is preferably used for reducing agglomeration of the particles which could lead to undesirable / low silver particle loading during mixing of the paste. The nanopowder of the present invention, preferably together with the dispersant, can be combined with a polymer binder that preferably has a volatilization temperature below the desired sintering temperature. Using a binder that preferably does not volatilize until close to the sintering temperature for the metal or metal alloy powder, assists in achieving denser interconnections since sintering occurs more uniformly throughout the composition (i.e., the binder is preferably chosen and formulated into the composition such that the metal or metal alloy powder on the edges closer to the source of heat does not start to fuse with neighboring particles until the bulk of the particles begins to fuse). Dispersion of the metal or metal alloy powder in the binder can be facilitated by ultrasonic or mechanical or methods, or combinations of the same.

[0009] The compositions of the present invention have a wide range of applications. For example, they can be used to bond silicon integrated circuit chips in computers, or silicon power chips in power supplies, or optoelectronic chips in telecommunications modules. Also, in the case of silver powder, and silver alloys, where the metal melts at temperatures over 700° C. or 800° C., the invention is suitable for attaching semiconductor chips that can be operated at high temperatures, e.g., SiC or GaN power chips. That is, by sintering silver or silver alloy that is in the form of a nanopowder (one that is less than 500 nm in size, and most preferably below 100 nm in size) at a relatively low temperatures (e.g., on the order of 300° C., a dense, conductive metal interconnection is achieved that can be operated at high temperatures without risking melting of the interconnect, as would be the case with commercial lead and lead free solders as well as conductive epoxies. The ability to allow these chips to operate at a high temperatures cuts down their cooling requirement, leading to savings in materials and energy in the manufacture and operations of the product.

Problems solved by technology

However, high applied pressure is not the norm in the packaging industry and could pose serious complications to the attachment / interconnection process, which in turn could lead to more failures (e.g., cracked die) and higher manufacturing costs.

It may require major modifications to existing production lines, thus it may not be considered as a drop-in replacement for solder.

The higher cost alone may discourage industry from adopting it.

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