The invention discloses a
trench gate silicon carbide MOSFET (
Metal-
Oxide-
Semiconductor Field Effect Transistor) device and a manufacturing method thereof, and relates to the technical field of power
semiconductor devices. An epitaxial layer is arranged on the substrate, and a drain
electrode is arranged below the substrate. The gate trench is arranged above the epitaxial layer, the two sides of the gate trench are multi-stage gate trench integration regions, and the interlayer
dielectric and the source
electrode are arranged on the gate trench integration regions.
Polycrystalline silicon and gate media are arranged in the gate trenches, the multi-stage gate trench integration region comprises a connection region, the multi-stage gate trenches and a current expansion layer, a shielding layer is arranged at the bottom, and the
polycrystalline silicon and the gate media are arranged in the multi-stage gate trench integration region. The source
electrode is connected with the drain electrode through the connecting region and is isolated from the multi-stage gate trench through the interlayer
dielectric, the shielding layer is of the second
conduction type, and the rest are of the first
conduction type. When the device is blocked, the
electric field at the
gate dielectric is reduced by applying zero or negative
gate voltage, and the
JFET effect is inhibited by applying positive
gate voltage when the device is conducted, so that the conduction capability is improved, and the loss is reduced. During avalanche, the multi-stage groove structure moves down a
breakdown point, the
heat transfer path is prolonged,
metal melting is delayed, and avalanche robustness is enhanced.