70 results about "Breakdown point" patented technology

A PMOS device can be designed and manufactured in accordance with the invention to locate its drain junction breakdown point and maximum impact ionization point to reduce or eliminate drain breakdown voltage walk-in. In some embodiments, the drain junction breakdown point and maximum impact ionization point are located sufficiently far from the gate that the device exhibits no significant drain breakdown voltage walk-in. The device can be a high voltage power transistor having an extended drain region including a P-type lightly doped drain (P-LDD) implant, with drain junction breakdown and maximum impact ionization points appropriately located by controlling the implant dose employed to produce the P-LDD implant. Other aspects of the invention are methods for designing a PMOS device including by determining relative locations of the gate and at least one of the drain junction breakdown and maximum impact ionization points to reduce drain breakdown voltage walk-in, and methods for manufacturing integrated circuits including any embodiment of the PMOS device of the invention.

The invention discloses an experiment method for monitoring cathode lithium precipitation via use of a reference electrode. The method comprises the following steps: a brass wire of a certain dimension is used as a substrate and is pre-embedded in an electrical core during electrical core making processes, the electrical core is adjusted to a certain charging state after the electrical core makingprocesses are finished, the brass wire is subjected to electrochemical deposition of lithium, a uniform lithium layer of a certain thickness is obtained, and therefore the reference electrode is obtained; a three electrode battery is connected with charge-discharge equipment, a current is applied to an anode and a cathode, electric potential change of a whole battery is monitored via user of thereference electrode during battery charging and discharging processes, and accuracy is confirmed; at last whether lithium precipitation occurs in the cathode of the battery is analyzed. The beneficialeffects of the method are that the electric potential change of all electrodes in the battery can be monitored via use of the reference electrodes through an electrochemical method, and breakdown points of cathode lithium precipitation can be determined; compared with a conventional disassembling observation method, the method disclosed in the invention is advantaged by simplicity, convenience, high credibility and high practicality.

The invention discloses a gate oxide failure point positioning method. after removal of a metal layer, a semiconductor structure to be measured obtained after removal of the metal layer is scanned by the use of an electron beam formed by medium and high accelerating voltage so as to obtain an electron microscope with a failure point pattern; and according to the electron microscope, the position of the failure point in a gate oxide is determined so as to more precisely position a breakdown point of the gate oxide. Furthermore, success rate of gate oxide breakdown voltage test failure analysis is raised effectively; preparation time of a follow-up transmission electron microscope sample is further shortened; efficiency of gate oxide breakdown voltage test failure analysis is raised; and necessary conditions are provided for the preparation of the transmission electron microscope sample which requires precise positioning. In addition, the breakdown point of the gate oxide and failure analysis of the gate oxide can still be positioned precisely when an optical positioning machine cannot be used.

A method for driving an asynchronous motor operated at an adjustable three-phase frequency to a predetermined target rotational speed is disclosed. For controlling the asynchronous motor in an operating range around its breakdown point a current rotational speed of the asynchronous motor is determined at predetermined intervals and the three-phase frequency is adjusted stepwise such that the current rotational speed lies within a predetermined maximum rotational speed deviation of an updated three-phase frequency.

A high voltage PMOS device having an improved breakdown voltage is achieved. An asymmetrical high voltage integrated circuit structure comprises a gate electrode on a substrate and source and drain regions within the substrate on either side and adjacent to the gate electrode wherein the source region is encompassed by an n-well. A symmetrical high voltage integrated circuit structure comprises a gate electrode on a substrate, source and drain regions within the substrate on either side and adjacent to the gate electrode, and an n-well in the substrate underlying the gate electrode. The n-well in both structures shifts the breakdown point from the silicon surface to the bottom of the source or drain regions.

The invention discloses a noncontact touch screen and a method for implementing mobile communication terminal using this screen. And the screen comprises: glass substrate, conducting layer, isolating points and photoelectric inductive layer, where the glass substrate is a transparent support layer, the conducting layer is coated on the glass substrate, and able to obtain 0-5V voltage by power supply system, the isolating points with very small granularity are regularly arranged on the conducting layer, and the photoelectric inductive layer is arranged on these isolating points. When a laser irradiates the screen, the photoelectric inductive layer on the screen is broken down to be short-circuited with the conducting layer, and here, a supporting processing software can calculate position of the current breakdown point according to the breakdown place and transmits the position to a microprocessor to make other judgments and corresponding event actions. And it changes the existing touch mode operation, makes up for interactive defect and solves the problems that mobile communication terminals with touch screens have large losses and short life.

The invention discloses an aluminium electrolysis bus system resistance to ground detection device and a detection method thereof. The device comprises a keyboard input device, a partial pressure filter, an amplifier, an MCU controller and an LED display; wherein all the parts are mutually electrically connected. The detection method includes 'auxiliary short circuit line method' and 'auxiliary grounding method'. The 'auxiliary short circuit line method' includes that the aluminium electrolysis cell bus system resistance to ground detection device is connected with a thick copper wire, short time short circuit to ground of the copper wire at electrolysis cell buses at different voltage classes is utilized to measure leakage current, a short circuit point is disconnected to measure the voltage to ground of the point, and equivalent resistance to ground of system is calculated according to ohm's law; and the 'auxiliary grounding method' includes that the whole series electrolysis cell support and bus piers are measured one by one, and disqualified point is found and cleaned, so as to judge and process an insulation breakdown point. The detection device and method thereof also can be applied to other occasions with strong direct current magnetic field and high distributed capacitance.

A method for quickly testing a recommended standard 485 (RS485) bus breakdown is characterized by comprising detectors and detection equipment of the detectors for use. The method includes the steps: firstly, enabling the detectors to be installed on each node of the RS485 bus which needs to be detected in a series connection mode, wherein each detector has different addresses and a controller can control multiple detectors; and then enabling the sum of the nodes on the bus to be arranged into N; and next, adopting dichotomy, first using the controller to send a control signal to the detectors at the positions of N/2 bus nodes and cutting the bus at the position of the N/2 bus nodes; and then checking whether the breakdown still exists, if judging that the breakdown occurs at the position of N/2 nodes which are close to a host machine, reusing the dichotomy in the N/2 nodes at present, and by parity of reasoning, until determining a breakdown point.

The invention discloses a testing method for yield and a breakdown voltage of an novel silicon carbide avalanche diode array, which comprises the following steps of: randomly selecting two or more devices in the novel silicon carbide avalanche diode array to test an I-V characteristic to obtain a breakdown voltage average value Vb; applying a bias voltage to a single device in the novel silicon carbide avalanche diode array with 1.1Vb as a testing highest voltage, and gradually increasing the bias voltage to the testing highest voltage; preliminarily judging whether the device is available ornot by taking the currents as 10-7A and 10-6A as the breakdown point and the current limiting point respectively; and applying the bias voltage to the single device to determine if the device is damaged due to a high voltage testing. The testing method for the yield and the breakdown voltage of the novel silicon carbide avalanche diode array reduces a testing period of a SiC-based APD array, improves the breakdown voltage testing accuracy of the SiC-based APD, improves the consistency of device operation in the array, reduces the damage caused by the testing on the device, and improves the safety of test personnel.

The invention discloses a cable insulation spark breakdown point lossless labeling device. The cable insulation spark breakdown point lossless labeling device comprises a working platform rack, wherein a color labeling device capable of forming a color coating on the outer surface of a cable insulation layer, an executor capable of converting a spark breakdown alarm electric signal into a drive color labeling device turning-on/off power output, and a transmission mechanism capable of transmitting the power output by the executor to a color labeling device control switch, the color labeling device is in an automatic paint spraying manner, an automatic paint spraying tank accommodating and fixing groove adapting to the automatic paint spraying tank in shape and size is formed in the working platform rack, and the executor is a pneumatic executor composed of a control valve and a pneumatic executing mechanism. According to the cable insulation spark breakdown point lossless labeling device, a color label can be automatically and rapidly sprayed on the outer surface of a spark breakdown point insulation layer, the labeling operation can not damage the insulation layer, and the requirement of the labeling operation of a high-speed cable production line can be met.

The invention relates to a GIS on-site voltage withstand test breakdown point locating method and a GIS on-site voltage withstand test breakdown point locating system. The GIS on-site voltage withstand test breakdown point locating method is characterized in that four audio sensors are disposed on one side of a tested device, and three audio sensors share one line, and the other audio sensor does not share the line with the above mentioned three audio sensors; the signals generated by the four audio sensors are acquired, and the signal generating time delays of the three groups of audio sensors are acquired; the signal generating time delays of the three groups of audio sensors satisfy linear independence; the signal generating time delays of the three groups of audio sensors are substituted into three locating equations, and a position of a breakdown point is acquired by solving a locating equation group constituted by three locating equations. The four audio sensors are used for the locating of the breakdown point, and therefore the locating is accurate, and the efficiency is high. The system is realized based on the method, and therefore the application of the method is facilitated.

The invention belongs to the power system field, and especially relates to a power supply line arc light earth fault range finding method; most power supply line earth faults belong to arc light earthing; after a fault line is in power failure, a DC current generator charges the line so as to boost a line voltage to earth; a fault point can be broken again when reaching a fault breakdown voltage, and the fault point fast turns to a low resistance state from a high resistance state; line distribution capacitance discharges through the breakdown point, and the voltage on the line suddenly drops. The line is considered to be a dynamic system; a line dynamic model is set up; a dynamic system parameter identification method can identify line dynamic model parameters according to a current and voltage sampling series on the line, thus calculating a fault range according to the model parameters.

The invention relates to a method for preparing vinegar from kiwi fruit wine. The method comprises the following steps: preparing kiwi fruit wine with the alcohol content of 10-12%, carrying out negative-pressure low-temperature distillation to remove part of alcohol in the kiwi fruit wine; and carrying out acetic fermentation to produce the 4-5 %vol fruit vinegar. After part of alcohol is distilled out of the kiwi fruit wine, the alcohol content of the wine is lowered to 5 %vol, and 100% fruit juice is preserved, thereby preserving various vitamins and other nutrients in the fruit juice; particularly, vitamin C in the kiwi fruit wine is well preserved since the temperature for distilling out alcohol does not exceed 70 DEG C and the breakdown point temperature of the vitamin C is 80 DEG C; and the acetic fermentation is carried out to produce the 4.5 %vol fruit vinegar with the fruit juice content of 100%, so that the fruit vinegar has higher nutritive value and conforms to the food requirements of people. The method enhances the production efficiency and raw material utilization ratio, and reduces the product flavor substance loss. Part of alcohol is removed by distillation while part of water is removed, thereby removing 10% of the volume on the whole. The raw juice is concentrated, so that the obtained kiwi fruit vinegar has thicker fruit aroma and more abundant nutrients.

The invention discloses a memory preanalysis method adopted after kernel breakdown.The method comprises the steps that when kernel breakdown is detected, an original kernel file is unloaded; whether the kernel starts CONFIG_DEBUG_INFO or not is judged; if the kernel starts CONFIG_DEBUG_INFO, breakdown point information is obtained from the original kernel file, wherein the breakdown point information comprises the virtual address and offset of a breakdown point; source code information of the breakdown point is obtained from the breakdown point information.According to the memory preanalysis method adopted after kernel breakdown, complete memory data does not need to be stored any more, and only necessary data needs to be stored, so that storage of debugging information is accelerated, time and spaced needed by storing the debugging information can be effectively reduced, and time needed by system kernel error recovery can be shortened.The invention further discloses a memory preanalysis method adopted after kernel breakdown.

The invention discloses a method for growing an epitaxial wafer of a GaN-based light emitting diode, and belongs to the field of a light emitting diode. The method comprises successively growing a buffer layer, an N-type layer, a multi-quantum well layer and a P-type layer on a substrate, wherein the P-type layer is grown by use of a high-pressure low-speed growth mode, the growth pressure of the P-type layer is 400torr to 760torr, the flow of TMGa is lower than 90sccm, the flow of TEGa is lower than 2000sccm, and the thickness of the P-type layer is 10nm to 60nm. According to the invention, through adoption of high-pressure low-speed growth, the crystal quality is quite good, the defect density caused by crystal lattice mismatch is substantially reduced, electric leakage channels between the NP layers are reduced, the current expansion capability of the NP layers is better, breakdown points are reduced, the antistatic capability of the epitaxial wafer is enhanced, requirements are met simply by growing a quite thin P-type layer, the light absorption amount of the P-type layer with a quite small thickness is smaller, and the light emitting amount of the front surface of a chip and the light emitting efficiency of a device are guaranteed.

The invention provides a screening testing method for a diode reverse characteristic and an application thereof, wherein the method relates to the field of semiconductor device testing technology. The screening testing method for the diode reverse characteristic comprises the following steps of 1), testing a breakdown voltage; 2), selecting two voltages in a range of 95%-99.5% of the breakdown voltage, testing leakage currents on the condition of the two voltages, respectively recording the two leakage currents as IR1 and IR2; and 3), calculating a ratio between the IR1 and the IR2, and determining whether the diode reverse characteristic is qualified according to the ratio. The testing method is used for screening the diode with a problem of small segmenting line at a breakdown point, thereby settling a problem of inapplicability of an existing testing method to the defective diode, improving quality of the diode after leaving a factory, and improving diode reliability.

A voltage oscillation frequency-based grounding electrode line overvoltage breakdown point positioning method disclosed by the present invention orderly comprises the following steps of 1 selecting the fault grounding electrode lines, according to the prony signal analysis, obtaining an oscillation frequency fz of a fault voltage waveform after the overvoltage breakdown; 2 according to a transfer function of the head-end voltages of the grounding electrode lines, obtaining a relation curve between the voltage oscillation frequencies fz and the grounding electrode line inductances L; 3 according to the relation curve between the voltage oscillation frequencies fz and the grounding electrode line inductances L in the step 2, obtaining the grounding electrode line inductance L corresponding to the oscillation frequency fz; 4 traversing the grounding electrode line equivalent impedances corresponding to different fault distances, and obtaining a relation curve between the grounding electrode line inductances and the fault distances; 5 according to the relation curve between the grounding electrode line inductances and the fault distances in the step 4, obtaining the fault distance d corresponding to the grounding electrode line inductance L3, thereby realizing the overvoltage breakdown point positioning.

The invention provides a comprehensive power transmission line video monitoring device based on the LTE technology and belongs to the field of power transmission line state monitoring equipment. A GSM short message processing unit and a power supply monitoring unit are respectively connected to a signal input end of a main control chip; a power supply end of the main control chip and a power supply end of the power supply monitoring unit are connected to a power supply unit through the power supply end of the power supply monitoring unit; one end of a numerical control switch, a power supply end of the power supply monitoring unit and a power supply end of an intelligent video server are connected to the power supply unit; the other end of the numerical control switch is connected to power supply ends of an LTE module and a camera respectively; and a video signal output end of the camera is connected to a video signal receiving end of the LTE module. By the adoption of the comprehensive power transmission line video monitoring device based on the LTE technology, real-time power line equipment monitoring can be realized, a newly-added breakdown point can be found in the first place, and high-definition video signals can be transmitted.

The invention discloses a point sound source sounding device and sounding method. The device comprises a laser generator, a pulse laser head arranged at a laser outgoing port of the laser generator, and a laser focusing lens located on an optical path of the pulse laser emitted from the pulse laser head; a light spot that can break through air is formed by focusing the pulse laser, the light intensity of the light spot is greater than a threshold of the light intensity generated by a plasma, when the air is broken down, a small plasma explosion with rapid expansion characteristics is generated, the expanded plasma produces a pressure pulse with a short and high peak, the frequency of the pressure pulse can exceed 100kHz, the pressure pulse propagates as a nonlinear supersonic shock wave near a breakdown point, and the propagation speed of the shock wave is determined by the energy released when the air is broken down; and for the laser pulse energy in an mJ energy range, the shock waveis rapidly attenuated into a sound wave, and thus a point sound source with sufficient sound pressure and spatial omnidirectionality can be obtained, and the point sound source is repeatable.