Passivation dielectric film for solar cell

A technology for solar cells and dielectric films, applied in the field of solar cells, can solve the problems of loss of passivation effect, rapid crystallization of amorphous silicon films, and inability to use solar cells for production, to achieve enhanced passivation effect, good control, and improved photoelectric conversion. performance effect

Inactive Publication Date: 2012-04-04
JA SOLAR TECH YANGZHOU +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this amorphous silicon film is extremely sensitive to high temperature. The high-temperature sintering process after conventional screen printing will cause the amorphous silicon film to crystallize rapidly and lose its passivation effect, so it cannot be used for large-scale solar cell production at all.

Method used

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  • Passivation dielectric film for solar cell
  • Passivation dielectric film for solar cell
  • Passivation dielectric film for solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] This example illustrates the application of laminated films on common n-type solar cells (the cross-sectional view of the cell is shown in figure 1 ), at this time the laminated film plays the role of passivation and optical anti-reflection at the same time. Specific steps are as follows:

[0034] A. Select a lightly doped n-type single crystal silicon wafer with a resistivity of 0.1~10 Ω·cm, place it in a texturing tank, and place it in a deionized aqueous solution of sodium hydroxide with a weight percentage of 0.5~5%. , the surface texture is carried out at a temperature of 75-90°C to form a suede structure;

[0035] B. Clean the surface of the silicon wafer with a chemical solution, the chemical solution is hydrofluoric acid, the concentration is 5-50%, the cleaning time is 0.5-60 minutes, and the temperature is 5-90°C;

[0036] C. After cleaning the above textured sheet, place it in a furnace tube at 700~1000°C for boron (B) diffusion to prepare a p-type emitter....

Embodiment 2

[0051] This embodiment illustrates the application of the laminated film structure on p-type silicon solar cells (see figure 2 ), mainly used for passivation of the backlight surface of the battery, the specific steps are as follows:

[0052] A. Select a lightly doped p-type single crystal silicon wafer with a resistivity of 0.1~10 Ω·cm, place the silicon wafer substrate in a texturing tank to remove the damaged layer and prepare the textured surface. The weight percentage is 0.5 In ~5% sodium hydroxide deionized aqueous solution, the surface texture is carried out at a temperature of 75~90°C to form a suede structure;

[0053] B. Clean the surface of the silicon wafer with a chemical solution, the chemical solution is hydrofluoric acid, the concentration is 5-50%, the cleaning time is 0.5-60 minutes, and the temperature is 5-90°C;

[0054] C. Place the silicon wafer in a furnace tube at 800-1000°C for phosphorus (P) diffusion, and form an n-type diffusion layer on the surfa...

Embodiment 3

[0064] This example illustrates that the laminated film structure is used in the production of p-type silicon solar cells to passivate the back surface of the cell and enhance the reflection of the unabsorbed solar long-wave photons on the back of the cell, thereby improving the photoelectric conversion efficiency of the cell . Specific steps are as follows:

[0065] A. Select a lightly doped p-type single crystal silicon wafer with a resistivity of 0.1~10 Ω·cm, place the silicon wafer substrate in a texturing tank to remove the damaged layer and prepare the textured surface. The weight percentage is 0.5 In ~5% sodium hydroxide deionized aqueous solution, the surface texture is carried out at a temperature of 75~90°C to form a suede structure;

[0066] B, the surface of the silicon chip is cleaned with a chemical solution, the chemical solution is a mixed solution of hydrofluoric acid and hydrochloric acid, wherein the ratio of hydrofluoric acid to hydrochloric acid is 1:1, a...

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Abstract

The invention discloses a passivation dielectric film for a solar cell. The passivation dielectric film is of a single-layer structure formed by a first dielectric film, or the passivation dielectric film is of a laminated structure formed by the first dielectric film and a second dielectric film, wherein the first dielectric film is in direct contact with a silicon substrate material; and the second dielectric film is deposited on the first dielectric film. The passivation dielectric film has good high-temperature sintering resistance, good optical antireflection performance, wider manufacturing method process window and strong feasibility and facilitates mass production.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a passivation medium film used for passivating the surface of a silicon chip of a solar cell. Background technique [0002] Photovoltaic technology is a technology that uses large-area p-n junction diodes to convert solar energy into electrical energy. This p-n junction diode is called a solar cell. The semiconductor materials used to make solar cells have a certain band gap. When the solar cell is irradiated by the sun, photons with energy exceeding the band gap generate electron-hole pairs in the solar cell. The p-n junction separates the electron-hole pairs, and the p-n junction The asymmetry determines the flow direction of different types of photo-generated carriers, and the external power can be output through the external circuit connection. This is similar to the principle of ordinary electrochemical cells. [0003] Generally speaking, the light-receivi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216
Inventor 周艳方尹海鹏张俊兵刘淑华单伟
Owner JA SOLAR TECH YANGZHOU
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