9results about How to "Reduce defect states" patented technology

The invention discloses a PN junction gate gallium oxide-based MODFET device and a preparation method thereof, the PN junction gate gallium oxide-based MODFET device sequentially comprises a substrate, a channel layer, a spacing layer, a delta doping layer and a barrier layer, and further comprises a first ohmic contact region arranged on one side of the end surfaces of the spacing layer, the delta doping layer and the barrier layer; the second ohmic contact region is arranged on the other side of the end surfaces of the spacing layer, the delta doping layer and the barrier layer; the first ohmic contact region and the second ohmic contact region are higher than the upper surface of the barrier layer; the PN junction structure is arranged on a part of the surface of the barrier layer; the dielectric layer structure is arranged above the barrier layer, the PN junction structure, the first ohmic contact region and the second ohmic contact region in a crossing manner; a source electrode disposed on the first ohmic contact region; the drain electrode is arranged on the second ohmic contact region; the gate electrode is arranged on the PN junction structure and the dielectric layer structure, and the upper end of the gate electrode extends towards the two ends of the dielectric layer structure located above the PN junction structure to form a field plate structure. The reliability of the device can be improved.

The invention belongs to the technical field of batteries, and relates to a perovskite battery interface passivation method. The preparation method comprises the following steps: dropwise adding a nickel oxide solution on an ITO substrate, uniformly spin-coating, and then drying, so that a nickel oxide nano-particle layer is cured; dropwise adding an ammonium polyphosphate solution on the cured nickel oxide nano-particle layer, and drying after uniformly spin-coating; coating the perovskite precursor solution on the surface of the ammonium polyphosphate layer of the substrate by adopting a two-step spin coating method, and annealing to complete the preparation of the perovskite layer; preparing an electron transport layer on the perovskite layer; and preparing a gold electrode on the electron transport layer. Ammonium polyphosphate is adopted for passivation of the upper interface and the lower interface of perovskite, phosphate groups of the lower interface and Ni < 2 + > / Ni < 3 + > form a strong coordination structure, a stable buried interface is formed, iodine vacancy forming energy is enhanced, defect states of the lower interface of the film are reduced, phosphate groups of the upper interface can be bonded with uncoordinated Pb < 2 + >, and therefore the defect states of the upper interface of the film are reduced, and the performance of the film is improved. The upper interface and the lower interface of the perovskite solar cell are good in dispersity.

The application relates to the technical field of perovskite materials, and discloses a kind of high-efficiency doped perovskite photoelectric conversion materials and preparation method thereof.The preparation raw materials of the perovskite photoelectric conversion material of the application include modified dopant, perovskite precursor solution and anti-solvent;The modified dopant of the application can inhibit the oxidation of Sn 2+ , reduce Sn vacancies and defects by introducing quinoline, thiocyanate and thiourea structure;During the preparation of the perovskite photoelectric conversion material, the introduction of modified dopant can realize efficient and uniform bulk doping, significantly improve the photoelectric conversion efficiency and long-term operation stability of the material, prevent the device from appearing efficiency decay, ion migration and phase separation and other problems under continuous work, and has broad application prospect.

This invention discloses a perovskite solar cell and its fabrication method. The method includes: spin-coating a mixed solution of lead iodide and HIAM-4024 or HIAM-4025 onto the surface of an electron transport layer, followed by annealing to obtain a lead iodide layer; and spin-coating an organic halide solution onto the surface of the lead iodide layer, followed by annealing to obtain a perovskite layer. This invention introduces HIAM-4024 or HIAM-4025 into the lead iodide layer, allowing high-energy photons to be filtered through HIAM-4024 or HIAM-4025. Through down-conversion, it emits photons in the visible light range, which are further utilized by the underlying perovskite absorber, thereby improving the light energy utilization of the perovskite solar cell. Furthermore, both HIAM-4024 and HIAM-4025 can effectively filter ultraviolet radiation that could damage the device, further enhancing the light energy utilization of the perovskite device.

The invention relates to a semiconductor structure, a preparation method thereof and electronic equipment. The semiconductor structure includes: an oxide semiconductor layer; the source / drain electrode is arranged around the oxide semiconductor layer; and the induction layer is positioned between the source / drain electrode and the oxide semiconductor layer and is used for inducing the oxide semiconductor layer to be converted into a crystalline structure from an amorphous structure. The thermal stability and reliability of the oxide transistor can be effectively improved.

The present invention provides a monomer self-polymerization-assisted synthesis perovskite solar cell and a preparation method thereof, specifically, adding an easily polymerizable monomer to a cesium bromide aqueous solution, then spin-coating it on a lead bromide film loaded with a titanium dioxide mesoporous electronic layer, introducing a monomer self-polymerization-assisted grain growth strategy, synthesizing a perovskite film by a two-step spin coating method, and finally scraping a carbon electrode to assemble into a solar cell. The present invention adopts a two-step method that can accurately control the raw material ratio, uses monomer additive self-polymerization to regulate the perovskite crystallization speed, the electron-donating group of the monomer passivates the metal ion state defects of the perovskite, and the monomer self-polymerization provides space for the growth of grains, eliminates the stress generated during the annealing process of the perovskite film, and obtains a high-purity perovskite film with a large grain size, low defect state density, high energy level matching and low surface roughness, thereby improving the photovoltaic performance of the battery. The present invention has simple preparation steps, high repeatability, green economy, and commercial application prospects.

The application provides a kind of display film crystalline injection process method, belongs to thin film crystalline injection technical field, method includes: S1, preparation stress buffer and crystallization control adjuvant, its raw material includes vinyltriethoxysilane, polyether modified polysiloxane surfactant and propylene glycol methyl ether acetate etc.;S2, indium nitrate, gallium nitrate, zinc acetate and adjuvant are mixed, and preparation base composite precursor solution A;S3, solution A is spin-coated into film, and gradient drying and pre-solidification are carried out to obtain pre-solidification film;S4, the impregnation liquid B obtained by diluting with adjuvant is used to carry out liquid phase assisted impregnation on pre-solidification film, and low oxygen atmosphere is carried out in low temperature activation gradient annealing;S5, in inert atmosphere, carry out rapid thermal annealing;The application realizes high-quality crystallization of film at lower temperature by adjuvant and synergistic annealing process, reduces the internal stress of film, and the prepared display film has excellent electrical performance uniformity, high light transmittance and low residual stress.

The invention belongs to the technical field of solar energy, and particularly relates to a preparation method of a perovskite solar cell with alcohol-soluble SnO2 as an electron transport layer, the alcohol-soluble SnO2 and a preparation method of the alcohol-soluble SnO2. SnO2 nano-particles with high crystallinity and small particle size are prepared by a hydrothermal method, ligands on the surface of SnO2 are optimized, and the perovskite solar cell with the alcohol-soluble SnO2 as the electron transport layer is prepared. The short-chain hydroxycarboxylic acid is selected to provide a stable ligand which is high in conductivity, low in boiling point and easy to remove, and stable coordinate bonds can be formed with SnO2 under the chelation of the diester compound. The prepared SnO2 can be dissolved in organic alcohol solvents, the solvents (such as isopropanol) cannot damage the perovskite structure, and the pH value of the system is nearly neutral, so that the SnO2 can be applied to a perovskite device to serve as an electron transport layer material.

This invention discloses a high-performance inverted perovskite solar cell and its fabrication method. The solar cell sequentially comprises an ITO conductive glass layer, a hole transport layer PTAA, and a MAPbI perovskite layer modified with 3,6-dibromocarbazole. 2.91 Br 0.09 Electron transport layer OAmI, Electron transport layer PC 61 The perovskite active layer consists of a BM (bulk barrier), a hole blocking layer (BCP), and a metal electrode layer (Ag). This approach enhances the carrier transport capability of the perovskite layer by introducing conjugated carbazole molecules into the active layer. This improves the energy level matching between the perovskite and carrier transport layers, increases photocurrent, improves film morphology, balances charge transport, and achieves enhanced photoelectric conversion efficiency, improved stability, and effective suppression of device hysteresis.