5results about How to "Reduce defect states" patented technology

The application relates to the technical field of perovskite materials, and discloses a kind of high-efficiency doped perovskite photoelectric conversion materials and preparation method thereof.The preparation raw materials of the perovskite photoelectric conversion material of the application include modified dopant, perovskite precursor solution and anti-solvent;The modified dopant of the application can inhibit the oxidation of Sn 2+ , reduce Sn vacancies and defects by introducing quinoline, thiocyanate and thiourea structure;During the preparation of the perovskite photoelectric conversion material, the introduction of modified dopant can realize efficient and uniform bulk doping, significantly improve the photoelectric conversion efficiency and long-term operation stability of the material, prevent the device from appearing efficiency decay, ion migration and phase separation and other problems under continuous work, and has broad application prospect.

This invention discloses a perovskite solar cell and its fabrication method. The method includes: spin-coating a mixed solution of lead iodide and HIAM-4024 or HIAM-4025 onto the surface of an electron transport layer, followed by annealing to obtain a lead iodide layer; and spin-coating an organic halide solution onto the surface of the lead iodide layer, followed by annealing to obtain a perovskite layer. This invention introduces HIAM-4024 or HIAM-4025 into the lead iodide layer, allowing high-energy photons to be filtered through HIAM-4024 or HIAM-4025. Through down-conversion, it emits photons in the visible light range, which are further utilized by the underlying perovskite absorber, thereby improving the light energy utilization of the perovskite solar cell. Furthermore, both HIAM-4024 and HIAM-4025 can effectively filter ultraviolet radiation that could damage the device, further enhancing the light energy utilization of the perovskite device.

The invention relates to a semiconductor structure, a preparation method thereof and electronic equipment. The semiconductor structure includes: an oxide semiconductor layer; the source / drain electrode is arranged around the oxide semiconductor layer; and the induction layer is positioned between the source / drain electrode and the oxide semiconductor layer and is used for inducing the oxide semiconductor layer to be converted into a crystalline structure from an amorphous structure. The thermal stability and reliability of the oxide transistor can be effectively improved.

The application provides a kind of display film crystalline injection process method, belongs to thin film crystalline injection technical field, method includes: S1, preparation stress buffer and crystallization control adjuvant, its raw material includes vinyltriethoxysilane, polyether modified polysiloxane surfactant and propylene glycol methyl ether acetate etc.;S2, indium nitrate, gallium nitrate, zinc acetate and adjuvant are mixed, and preparation base composite precursor solution A;S3, solution A is spin-coated into film, and gradient drying and pre-solidification are carried out to obtain pre-solidification film;S4, the impregnation liquid B obtained by diluting with adjuvant is used to carry out liquid phase assisted impregnation on pre-solidification film, and low oxygen atmosphere is carried out in low temperature activation gradient annealing;S5, in inert atmosphere, carry out rapid thermal annealing;The application realizes high-quality crystallization of film at lower temperature by adjuvant and synergistic annealing process, reduces the internal stress of film, and the prepared display film has excellent electrical performance uniformity, high light transmittance and low residual stress.

This invention discloses a high-performance inverted perovskite solar cell and its fabrication method. The solar cell sequentially comprises an ITO conductive glass layer, a hole transport layer PTAA, and a MAPbI perovskite layer modified with 3,6-dibromocarbazole. 2.91 Br 0.09 Electron transport layer OAmI, Electron transport layer PC 61 The perovskite active layer consists of a BM (bulk barrier), a hole blocking layer (BCP), and a metal electrode layer (Ag). This approach enhances the carrier transport capability of the perovskite layer by introducing conjugated carbazole molecules into the active layer. This improves the energy level matching between the perovskite and carrier transport layers, increases photocurrent, improves film morphology, balances charge transport, and achieves enhanced photoelectric conversion efficiency, improved stability, and effective suppression of device hysteresis.