Oxide-metal multilayer film back contact crystalline silicon solar cell and preparation method thereof

Abstract

The invention discloses an oxide-metal multilayer film back contact crystalline silicon solar cell, which comprises a crystalline silicon wafer, wherein passivation layers are arranged on the front surface and the back surface of the crystalline silicon wafer; the passivation layer on the back surface is provided with an emitter, an emitter metal electrode and a base metal electrode; the emitter comprises a first oxide thin film, a metal film and a second oxide thin film; the first oxide thin film or the second oxide thin film is a WO3 thin film, an NiO thin film or a V2O5 thin film; and the metal thin film is an Ag thin film, an Au thin film, a Pd thin film, a Cu thin film, an Ni thin film, an Mo thin film, a W thin film or an Al thin film. The surface of the cell is not shielded by a metal grid line; the raw materials do not include inflammable, explosive or toxic materials and are friendly to environment; expensive devices of a photoetching device, a laser device and the like and a complicated technological process are not needed in the overall preparation process; and the crystalline silicon solar cell disclosed by the invention is free of a high temperature, simple in processing step and suitable for large-scale production, does not need to use a transparent conductive thin film, is low in cost and has a wide application prospect.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to an oxide-metal multilayer film back-contact crystalline silicon solar cell and a preparation method thereof. Background technique [0002] The most common structure type of solar cells is the p-n junction type of inorganic material system, which can be divided into homojunction and heterojunction according to the similarities and differences of materials. Heterojunction solar cells can avoid the high-temperature diffusion process, and prepare thin films and silicon substrates at low temperatures to form p-n junctions. The current commercial silicon-based heterojunction solar cells mainly include a-Si:H / c-Si heterojunction with intrinsic thin layer (HIT) and interdigitated backcontact silicon heterojunction (IBC-SHJ) solar cells. . [0003] The front surface of the IBC-SHJ solar cell uses a larger band of semiconductor material as an anti-reflection film and pass...

AI Technical Summary

Problems solved by technology

However, IBC-SHJ solar cells currently have the following problems: 1. The equipment is expensive, and the raw material silane is a flammable and explosive chemical

3. It is necessary to use transparent conductive films such as ITO and low-temperature silver paste, which are expensive and difficult to mass produce

However, the front-junction oxide-metal multilayer film / silicon-based solar cell has the following disadvantages: (1) The emitter of the cell contains a layer of metal film, which will greatly reduce the efficiency of the cell due to the reflection and absorption of light by the metal film. Photogenerated current; (2) The metal electrode on the front surface and the emitter are only partially in contact (~8%), the series resistance is large, and the fill factor is low

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