38results about How to "Reduced Auger Recombination" patented technology

The present invention provides an LED and the manufacturing method thereof, and a light emitting device. The LED includes a first electrode, for connecting the LED to a negative terminal of a power supply; a substrate, located on the first electrode; and an LED chip, located on the substrate; in which a plurality of contact holes are formed through the substrate, the contact holes are evenly distributed and filled with electrode plugs connecting the first electrode to the LED chip. The light emitting device includes the LED, and further includes a base and an LED mounted on the base. The manufacturing method includes: providing a substrate; forming on the substrate an LED chip and a second electrode successively; forming a plurality of evenly distributed contact holes on a backface of the substrate, the contact holes extending through the substrate and to the LED chip; and filling the contact holes with conducting material till the backface of the substrate is covered by the conducting material. The LED has a high luminous efficiency and the manufacturing method is easy to implement.

The invention relates to a diffusion process which is applied in a silicon solar cell, the diffusion steps can be mainly divided into two steps, which specifically include: (1) a first diffusion is carried out: a silicon wafer is placed in a diffusion furnace, big nitrogen, small nitrogen and oxygen are introduced simultaneously, the diffusion temperature is at 800 to 860 DEG C and the time is 15 to 30 minutes; (2) the temperature of the diffusion furnace is increased to 870 to 920 DEG C, the silicon wafer is stably placed for 10 to 30 minutes and then is distributed; (3) a second diffusion is carried out: the diffusion temperature is at 870 to 920 DEG C, the time is 1 to 10 minutes; (4) the diffusion process is finished, the temperature of the diffusion furnace is decreased and the silicon wafer is taken out. The invention can obtain more optimized doping curve in an emission region based on the method, thereby reducing the Auger recombination which is caused by high doping in the emission region and improving the short-circuit current of the cell by 0.5 to 1mA / cm<2>. A sheet resistance in the emission region and a contact resistance between the emission region and a grid line can not be increased by using the method; furthermore, all the diffusion steps are continuously carried out in a furnace tube, and the complexity of the technique is not increased.

The invention discloses a diffusion method of a crystal wafer, which comprises the following steps that (1) the crystal wafer is made into wool and cleaned; (2) constant source diffusion is carried out, the atmosphere in a furnace comprises nitrogen, oxygen and pure nitrogen which carry diffusion sources, and the flow of the nitrogen, the oxygen and the pure nitrogen which carry the diffusion sources remains unchanged during a diffusion process; (3) impurity glass is removed, and cleaning is carried out; (4) limited source diffusion is carried out, only the nitrogen and the oxygen are fed in during the diffusion process, and the flow of the nitrogen and the oxygen remains unchanged; (5) diffusion is over, and the wafer is taken out; the surface doping concentration of the wafer is 1*1020atom / cm<3> to 5*1020atom / cm<3>; and the depth of a PN junction is 0.5mum to 1mum. According to the diffusion method, the 'dead-layer' effect caused by high surface doping concentration is effectively reduced, the auger recombination of surface photon-generated carrier is reduced, and the minority carrier lifetime is prolonged.

The invention discloses a strain multiple quantum well laser device based on GeSn / SiGeSn material and a manufacturing method thereof. A barrier layer adopts a GeSiSn material; and the barrier layer adopts a GeSn material. A pseudo substrate (Ge), a buffer layer (GeSn) and an active area (GeSn / GeSiSn) are vertically distributed on a substrate (Si) from bottom to top in sequence, and an Si3N4 tensile stress film is wrapped around the pseudo substrate, the buffer layer and the active area. The manufacturing method of the laser device disclosed by the invention comprises the following steps: (1) adopting a low-temperature solid-source molecular beam epitaxy growth technology to grow the GeSn and GeSiSn materials; and (2) adopting a standard laser device manufacturing technology to process the device. Through a multiple quantum well structure and the tensile strain introduced by the additionally added Si3N4 stress film, red shift occurs for the laser wavelength of the laser device, the optical gain of the laser device is obviously improved, and the threshold value is greatly reduced.

The invention discloses an OPV-driven OLED light source and a preparation method thereof. The OPV collects sunlight and stores it in an energy storage and a controller. The energy storage and the controller are made of organic materials. The energy storage and the controller, the OPV and the OLED After assembly, OPV, energy storage and OLED are all transparent or translucent devices. A plate-shaped integrated system is formed through stacked assembly and embedded assembly. The energy storage and the controller control the energy storage to automatically supply power to the OLED, thereby realizing the OPV-driven OLED. The light source emits light. The active layer of OPV has a double-layer structure. The active layer is made of materials with narrow bandgap width. The dual emission layer of OLED is formed by doping the guest material in the host molecular material at a low concentration. The integrated system of the present invention uses all organic materials to make a translucent integrated system, which has low preparation cost, is environmentally friendly and simple in process, provides a new idea for the future lighting industry, and has a wide range of uses for the finished product.

The invention provides a high-efficiency crystal silicon solar cell and a fabrication method thereof. The high-efficiency crystal silicon solar cell comprises an upper electrode, a passivation anti-reflection SiN layer, a phosphorus diffusion layer, a substrate crystal silicon wafer, an aluminum diffusion layer, an adjustment layer and a lower electrode which are sequentially laminated, wherein the adjustment layer comprises a dielectric material and / or a conductive film material or a quantum well material. The invention also discloses the fabrication method of the high-efficiency crystal silicon solar cell. The high-efficiency crystal silicon solar cell is simple in structure and low in fabrication cost, and the high-efficiency crystal silicon solar cell can be simply upgraded by means of a traditional solar cell production line to complete cell fabrication.

The present invention relates to a method for preparing semiconductor optical amplifier with insensitive polarization. Said method is characterized by that on N-type indium phosphide substrate said method adopts three epitaxial process, photoetching process, electrode-making process, cleavage process and anti-reflective film plating process to implement said device preparation.

The invention relates to an integration method of electric adsorption modulation laser and mode speckle converter, which comprises: growing n-type indium phosphate buffer layer on the substrate; corroding the upper 1.1Q layer on the chip, to grow buffer layer; growing silica dioxide protective layer on the whole chip, and corroding the silica dioxide protective layer at two ends of mode speckle converter; pouring low-energy phosphate ion; growing the silica dioxide protective layer again; heating, keeping warm, anneal on the chip; corroding silica dioxide protective layer; using relative lightetching plate to mask the laser and modulator, to form the upper ridge and lower ridge on the converter; growing p-type indium phosphate and indium gallium arsenic phosphate etching stop layer; etching ridge pilot structure; depositing medlin at two sides of laser and modulator; opening the electrode windows of laser and modulator; etching the electrode images on the laser and modulator to splashthe P electrode and remove the P electrode; extending the substrate, and splashing n electrode; slicing the sample to form tubular chip.

A method for preparing a passivation contact structure based on LPCVD secondary ion implantation provided by the present invention can well solve the problem encountered in preparing a heavily doped polysilicon layer by tubular LPCVD ion implantation, that is, while increasing the surface ion concentration The problem of increasing the number of ions that inevitably diffuse through the tunnel oxide layer can increase the surface ion concentration of polysilicon, increase the electrical conductivity, reduce the contact resistance, and thereby improve the battery fill factor; reduce the diffusion through the tunnel oxide layer. ions, reducing Auger recombination, improving the passivation effect of the structure, increasing the open circuit voltage and short circuit current; the process is mature and can be completed by using the existing equipment for secondary processing.

The present invention provides a large-size LED chip and a manufacturing method thereof. Tunneling junctions and several current spreading composite layers are arranged on the surface of the epitaxial stack facing away from the substrate, wherein the current spreading composite layers Layers are stacked on the surface of one side of the tunnel junction away from the epitaxial stack, and each of the current spreading composite layers includes a second N-type semiconductor layer and an ohmic contact layer stacked in sequence along the first direction; the current spreading The composite layer has a first through hole, the first through hole penetrates from the ohmic contact layer of the top layer to part of the first N-type semiconductor layer, and exposes part of the surface of the first N-type semiconductor layer; the P A tunneling effect is formed between the N-type semiconductor layer and the bottommost second N-type semiconductor layer. In this way, the transparent conductive layer of the traditional structure is replaced by the epitaxial material layer (that is, the N-type semiconductor layer), and a stable and reliable chip structure can be better realized while ensuring its current spreading effect.

Disclosed a method for one time extension forming the semiconductor laser and mode spot switch comprises following steps: (1), on the N type indium phosphide substrate, extending growing the N type indium phosphide breaker, a lower waveguide layer, a 2.4 mu m indium phosphide space layer, a lower light-limited layer of active region, a compression strain quanta active region, a upper light-limited layer, a P type indium phosphide envelope, and a high doping P type indium gallium arsenide ohmic electrode contract layer; (2), utilizing the wet corrosion process to etch the upper carinate shape of laser and mode spot switch; (3) utilizing the auto-alignment process to etch the lower carinate shape; (4), growing the SiO2 insulating layer and opening a electrode window; (5) decreasing the substrate of extended plate to 100 mu m, and manufacturing P / N electrodes to be scribed into the tube core of 250X600mu m.

The present invention discloses an epitaxial structure for semiconductor light-emitting device, comprising an electron injection region, a hole injection region, a multi-quantum well active region, a potential barrier layer for blocking carriers, and one or more band edge shaping layers. The doping type and / or doping concentration of said band edge shaping layers are different from those of the adjacent layers. It may trim the band edge shape of the semiconductor energy band through the local built-in electric field formed as a result of adjusting the doping type, doping concentration and / or layer thickness thereof, such that the carriers in the multi-quantum well active region are distributed uniformly, the overall Auger recombination is decreased, and the effective potential barrier height of the potential barrier layer for blocking carriers is increased to reduce the drain current formed by carriers overflowing out of the multi-quantum well active region, thereby improving internal quantum efficiency. The present invention further discloses a semiconductor light-emitting device that employs said epitaxial structure, which similarly achieves the effects of reduced Auger recombination and / or decreased drain current through the trimming of the band edge shape of the energy band structure by the local built-in electric field, thereby improving internal quantum efficiency of the device.