A high-efficiency crystalline silicon solar cell

A technology of solar cells and crystalline silicon, applied in the field of solar cells, can solve problems affecting cell efficiency, Auger recombination, etc., and achieve the effect of simple and easy preparation method, simple structure and low preparation cost

Active Publication Date: 2017-12-12
锦州阳光能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the heavy aluminum diffusion layer also caused serious Auger recombination, which affected the efficiency of the battery.

Method used

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  • A high-efficiency crystalline silicon solar cell

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Embodiment 1

[0030] This embodiment discloses a crystalline silicon solar cell with simple and effective control of Auger recombination. The cell has a simple structure and low manufacturing cost, and the conventional solar cell production line can be easily upgraded to complete the cell preparation.

[0031] Specifically, high-efficiency crystalline silicon solar cells such as figure 1 As shown, it includes an upper electrode 1, a passivation anti-reflection SiN layer 2, a phosphorus diffusion layer 6, a base crystal silicon wafer 3, an aluminum diffusion layer 7, an adjustment layer 4 and a lower electrode 5 stacked in sequence;

[0032] The base crystalline silicon wafer 3 used in this embodiment is a p-type silicon wafer with a resistivity of 1-20Ωcm, the upper electrode is a silver electrode, and the lower electrode is an aluminum electrode. The adjustment layer 4 includes but not limited to: (1) Al 2 o 3 , SiN, SiO 2 , SiON or a composite film of their combination; (2) in order to...

Embodiment 2

[0042] This embodiment discloses a simple and effective controlled Auger recombination crystalline silicon solar cell. The cell has a simple structure and low manufacturing cost, and the cell can be manufactured by simply upgrading the traditional solar cell production line.

[0043] Specifically, a high-efficiency crystalline silicon solar cell includes an upper electrode 1, a passivation anti-reflection SiN layer 2, a phosphorus diffusion layer 6, a base crystal silicon wafer 3, an aluminum diffusion layer 7, an adjustment layer 4 and a lower electrode 5 stacked in sequence;

[0044] The base crystalline silicon wafer 3 used in this embodiment is an n-type silicon wafer with a resistivity of 1-20Ωcm, the upper electrode is a silver electrode, and the lower electrode is an aluminum electrode. Adjustment layer 4 includes but not limited to: (1) Al 2 o 3 , SiN, SiO 2 , SiON or a composite film of their combination; (2) in order to enhance the conductivity, the adjustment laye...

Embodiment 3

[0055] This embodiment discloses a method for preparing a high-efficiency crystalline silicon solar cell, which includes the following steps:

[0056] 1. Select a 2Ω·cm p-type silicon wafer, remove the damaged layer on the surface of the silicon wafer, and use KOH / IPA for surface texturing;

[0057] 2. Use phosphorus oxychloride to diffuse phosphorus on one side of the silicon wafer to form an n-type phosphorus diffusion layer on the front surface. The diffusion method is back-to-back diffusion, and the rear resistance of the expansion is 50±10Ω / □;

[0058] 3. Use the chain wet etching method to polish the back of the silicon wafer and remove the PSG, so as to remove the slight phosphorus diffusion layer on the back of the phosphorus diffusion to avoid leakage;

[0059] 4. Clean and deposit a SiN passivation anti-reflection layer on the front side;

[0060] 5. Deposit Al on the back side by ALD method 2 o 3 / ZnO quantum well material, here it is the adjustment layer with co...

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Abstract

The invention provides a high-efficiency crystal silicon solar cell and a fabrication method thereof. The high-efficiency crystal silicon solar cell comprises an upper electrode, a passivation anti-reflection SiN layer, a phosphorus diffusion layer, a substrate crystal silicon wafer, an aluminum diffusion layer, an adjustment layer and a lower electrode which are sequentially laminated, wherein the adjustment layer comprises a dielectric material and / or a conductive film material or a quantum well material. The invention also discloses the fabrication method of the high-efficiency crystal silicon solar cell. The high-efficiency crystal silicon solar cell is simple in structure and low in fabrication cost, and the high-efficiency crystal silicon solar cell can be simply upgraded by means of a traditional solar cell production line to complete cell fabrication.

Description

technical field [0001] The invention relates to solar cell technology, in particular to a high-efficiency crystalline silicon solar cell. Background technique [0002] At present, crystalline silicon solar cells on the market are prepared on a p-type silicon wafer by diffusion of phosphorus to form a pn junction, then deposit SiN on the upper surface, and finally print the silver upper electrode, and print the aluminum lower electrode on the back. During the sintering process of the electrode, the aluminum and silicon on the back form a silicon-aluminum alloy layer, and the aluminum diffuses into the silicon to form an aluminum back field, which has the function of field passivation. But the heavy aluminum diffusion layer also caused severe Auger recombination, affecting the efficiency of the battery. The study found that the doping concentration of Al was 10 17 cm -3 , the carrier lifetime is ~1 microsecond; the doping concentration of Al is 10 18 cm -3 , the carrier l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0256H01L31/18
CPCH01L31/0256H01L31/1804Y02E10/547Y02P70/50
Inventor 刘爱民谭鑫魏一
Owner 锦州阳光能源有限公司
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