The present application belongs to the technical field of back-contact
cell preparation, and particularly relates to a
hybrid passivated back-contact
cell without a doped
silicon crystal layer arranged on a front face thereof, and a preparation method therefor. The method comprises: S101, forming in sequence a first
semiconductor layer and a
mask layer on a back face of a
silicon wafer, both sides of which are polished; S102, performing first
etching opening in the back face, so as to form second
semiconductor opening areas; S103, performing texturing and cleaning; S104, depositing a first intrinsic
amorphous silicon layer on the front face, and depositing a second
semiconductor layer on the back face; S105, performing second
etching opening in the second semiconductor layer on the back face; and S106, depositing a second transparent conductive film layer on the back face by using a magnetron
sputtering process, and directly depositing a first transparent conductive film layer on the front face. The present application can effectively avoid a power attenuation problem caused by a PID effect occurring in a
cell, so that one instance of PECVD
coating can be reduced, thereby effectively reducing the
reflectivity and
reflection loss of a front face, and the quality of film
layers is high, thereby improving the efficiency of conversion.