The invention belongs to the technical field of metallurgy purification, and particularly relates to a method and equipment for directional solidification and purification of polycrystalline silicon through taking tailing by a quartz tube. According to the method, under inert gas environment, silicon is melt and then is cooled to pull ingot; when solidification is completed by 85-90%, the quartz tube is stretched into the surplus melt silicon, vacuumizing is stopped, inert gas is led in, the surplus melt silicon enters the quartz tube under the action of pressure difference, ingot pulling is continuously carried out, after the upper end of a crucible leaves a heating area, a tailing collection box is stretched below the quartz tube with a point; the power is cut off so as to stop heating, melt silicon in the quartz tube expands, then the quartz tube cracks and falls into the tailing collection box, and cast ingot of high purity in the crucible is obtained. Due to the method, back-diffusion of impurity is prevented, technology processes are reduced, and the yield of cast ingot is improved. The equipment is convenient to improve and install, is simple to operate, can effectively remove impurities accumulated at the tail of the cast ingot, save production period and cost, and is applicable to industrial production.