Preparation method and preparation technology of efficient PERC crystalline silicon solar cell

A solar cell and preparation technology, applied in sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems affecting battery efficiency, leakage, etc., to improve appearance, increase minority carrier life, and reduce electronic effects Effect

Inactive Publication Date: 2017-01-11
JINENG CLEAN ENERGY TECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the existence of PN on the edge and back edge after diffusion, there is still the problem of the uniformity of the coating after

Method used

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  • Preparation method and preparation technology of efficient PERC crystalline silicon solar cell
  • Preparation method and preparation technology of efficient PERC crystalline silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1: Take 800pcs polysilicon wafers, adopt liquid volume ratio to be HNO 3 : The rich nitric acid system of HF=4:1 prepares suede with a weight reduction of 0.3-0.4g; the volume ratio of the solution is HNO 3 : The rich nitric acid system of HF=10:1 carries out acid polishing to make the reflectivity of the back surface reach 27-35%; when diffusing, take 400pcs respectively for single-sided diffusion and double-sided diffusion, and use POCl 3 As a phosphorus source, a two-step diffusion method is adopted, the deposition and advancement time are 15min and 13min respectively, and the diffusion temperature is about 830°C; the volume ratio of the solution after mixing is HNO 3 : HF = 10:1 etching groove to remove the PN junction on the edge and the back; through atomic layer deposition (ALD) aluminum oxide film on the back, the deposition thickness is about 10nm; and then PECVD silicon nitride on the back, the deposition thickness is 70-90nm; Then laser grooved, t...

Embodiment 2

[0029] Example 2: Take 800pcs of monocrystalline silicon wafers, pass through an alkali tank with a liquid volume ratio of NaOH:Addition=4:1, make texture for 1100s, and a temperature of 80°C to prepare a textured surface with a weight reduction of 0.4-0.8g; The volume ratio of dosing solution is HNO 3 : The rich nitric acid system of HF=10:1 carries out acid polishing to make the reflectivity of the back surface reach 27-35%; when diffusing, take 400pcs respectively for single-sided diffusion and double-sided diffusion, and use POCl 3 As a phosphorus source, a two-step diffusion method is adopted, the deposition and advancement time are 15min and 13min respectively, and the diffusion temperature is about 830°C; the volume ratio of the solution after mixing is HNO 3 : HF = 10:1 etching groove to remove the PN junction on the edge and the back; through atomic layer deposition (ALD) aluminum oxide film on the back, the deposition thickness is about 10nm; and then PECVD silicon n...

Embodiment 3

[0030]Example 3: Take 800pcs of monocrystalline silicon wafers, prepare a textured surface with a weight removal of 0.4-0.8g through an alkali tank with a liquid volume ratio of NaOH:Addition=4:1, a texturing time of 1100s, and a temperature of 80°C; After the PE mask, carry out alkali polishing to make the reflectivity of the back surface reach 30-40%, and remove the mask through the HF tank; when diffusing, take 400pcs for single-sided diffusion and double-sided diffusion respectively, and use POCl 3 As a phosphorus source, a two-step diffusion method is adopted, the deposition and advancement time are 15min and 13min respectively, and the diffusion temperature is about 830°C; the volume ratio of the solution after mixing is HNO 3 : HF = 10:1 etching groove to remove the PN junction on the edge and the back; through atomic layer deposition (ALD) aluminum oxide film on the back, the deposition thickness is about 10nm; and then PECVD silicon nitride on the back, the deposition ...

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Abstract

The invention discloses a preparation method and a preparation technology of an efficient PERC crystalline silicon solar cell. The preparation method sequentially comprises the steps of texturing, diffusing, etching, Al2O3 plating, back SiNx plating, front SiNx plating, silk-screen printing and sintering. The characteristics lie in that acid polishing or alkaline polishing is further performed between the steps of texturing and diffusing, the step of diffusing comprises double-side diffusion and single-side diffusion, and laser grooving or tapping is performed between the steps of back SiNx plating and front SiNx plating. Transition metal impurities are gettered through double-side diffusion phosphorus gettering, electronics effects of a defect are cut down, and recombination of minority carriers is reduced, so that the minority carrier lifetime is prolonged, the conversion efficiency is further improved, and double-side diffusion is enabled to be well matched with acid polishing or alkaline polishing. Meanwhile, a problem of coating uniformity after etching of the solar cell is solved through back diffusion junction preparation, so that the appearance of back coating is improved, and substantial improvement in PERC cell efficiency is realized in a cost controllable range.

Description

technical field [0001] The invention relates to a solar cell manufacturing process, in particular to a high-efficiency PERC crystalline silicon solar cell manufacturing process and method. Background technique [0002] With the continuous improvement of crystalline silicon solar cell technology, the mass production conversion efficiency of monocrystalline silicon solar cells with traditional structure has reached 19.2%, and the mass production conversion efficiency of polycrystalline silicon solar cells has reached 17.8%. There is not much room for improvement in the efficiency of cells with traditional structures, and the improvement of cell efficiency must rely on the development of crystalline silicon solar cells with new structures. In the current high-efficiency silicon-based cell technology, since the passivated emitter and rear surface cell (PERC cell) moves the process of improving cell efficiency to the back of the cell, it is compatible with other high-efficiency c...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L21/306H01L21/228
CPCH01L21/228H01L21/306H01L31/1804Y02E10/547Y02P70/50
Inventor 黄金王继磊付少剑张娟
Owner JINENG CLEAN ENERGY TECH LTD
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