Polycrystalline silicon ingoting process for shortening corner crystal growth time
A polysilicon and crystal growth technology, applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problem of high labor and electricity costs, reduce electricity and labor costs, and prevent reverse diffusion. , the effect of improving quality
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Embodiment 1
[0020] Polysilicon ingot casting is carried out according to the following process:
[0021] (1) Loading, vacuuming and preheating: put polysilicon material with a purity of 5N into the quartz crucible in the ingot furnace, then vacuumize to 0.5Pa, start preheating, and the temperature in the quartz crucible reaches 1100°C within 2 hours.
[0022] (2) Melting and heat preservation: Introduce argon gas into the ingot casting furnace as a protective gas to keep the pressure in the furnace at 40KPa, then heat up to make the temperature in the quartz crucible reach 1550°C within 4 hours and keep it warm for 8 hours.
[0023] (3) Central crystal growth stage: first adjust the pressure in the furnace to 50KPa, then lower the temperature in the quartz crucible to 1420°C within 0.5h, and then lower the temperature from 1420°C to 1410°C after 27h.
[0024] (4) Corner crystal growth stage: Cool down to 1405°C in 0.5h to complete 1 / 6 of the corner crystal growth stage.
[0025] (5) Anne...
Embodiment 2
[0029] (1) Loading, vacuuming and preheating: put the polysilicon material with a purity of 6N into the quartz crucible in the ingot furnace, then vacuumize to 0.9Pa, start preheating, and the temperature in the quartz crucible reaches 1200°C within 3 hours.
[0030] (2) Melting and heat preservation: Introduce argon gas into the ingot casting furnace as a protective gas to keep the pressure in the furnace at 60KPa, then heat up to make the temperature in the quartz crucible reach 1570°C within 6 hours and keep the temperature for 9 hours.
[0031] (3) Central crystal growth stage: first adjust the pressure in the furnace to 70KPa, then reduce the temperature in the quartz crucible to 1430°C within 0.5h, and then reduce the temperature from 1430°C to 1415°C after 29h.
[0032] (4) Corner crystal growth stage: Cool down to 1410°C in 0.5h to complete 1 / 4 of the corner crystal growth stage.
[0033] (5) Annealing: Cool the polysilicon ingot to 1370°C within 0.5h and keep it warm ...
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