Polycrystalline silicon ingoting process for shortening corner crystal growth time

A polysilicon and crystal growth technology, applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problem of high labor and electricity costs, reduce electricity and labor costs, and prevent reverse diffusion. , the effect of improving quality

Inactive Publication Date: 2013-12-25
青岛隆盛晶硅科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, it takes a long time in the crystal growth stage, generally more than 60 hours, which makes the cost of manpower and electricity in the ingot casting process remain high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Polysilicon ingot casting is carried out according to the following process:

[0021] (1) Loading, vacuuming and preheating: put polysilicon material with a purity of 5N into the quartz crucible in the ingot furnace, then vacuumize to 0.5Pa, start preheating, and the temperature in the quartz crucible reaches 1100°C within 2 hours.

[0022] (2) Melting and heat preservation: Introduce argon gas into the ingot casting furnace as a protective gas to keep the pressure in the furnace at 40KPa, then heat up to make the temperature in the quartz crucible reach 1550°C within 4 hours and keep it warm for 8 hours.

[0023] (3) Central crystal growth stage: first adjust the pressure in the furnace to 50KPa, then lower the temperature in the quartz crucible to 1420°C within 0.5h, and then lower the temperature from 1420°C to 1410°C after 27h.

[0024] (4) Corner crystal growth stage: Cool down to 1405°C in 0.5h to complete 1 / 6 of the corner crystal growth stage.

[0025] (5) Anne...

Embodiment 2

[0029] (1) Loading, vacuuming and preheating: put the polysilicon material with a purity of 6N into the quartz crucible in the ingot furnace, then vacuumize to 0.9Pa, start preheating, and the temperature in the quartz crucible reaches 1200°C within 3 hours.

[0030] (2) Melting and heat preservation: Introduce argon gas into the ingot casting furnace as a protective gas to keep the pressure in the furnace at 60KPa, then heat up to make the temperature in the quartz crucible reach 1570°C within 6 hours and keep the temperature for 9 hours.

[0031] (3) Central crystal growth stage: first adjust the pressure in the furnace to 70KPa, then reduce the temperature in the quartz crucible to 1430°C within 0.5h, and then reduce the temperature from 1430°C to 1415°C after 29h.

[0032] (4) Corner crystal growth stage: Cool down to 1410°C in 0.5h to complete 1 / 4 of the corner crystal growth stage.

[0033] (5) Annealing: Cool the polysilicon ingot to 1370°C within 0.5h and keep it warm ...

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Abstract

The invention belongs to the field of polycrystalline silicon ingoting, and particularly relates to a polycrystalline silicon ingoting process for shortening corner crystal growth time. The process comprises the following steps: loading, vacuum-pumping, preheating, melting and heat-insulating, crystal growth, annealing, temperature reduction and squaring, wherein the step of crystal growth comprises a central crystal growth stage and a corner crystal growth stage. The polycrystalline silicon ingoting process is characterized in that the next step of annealing stage can be performed after 1/4-1/6 of the corner crystal growth stage is completed. The ingoting process has the advantages as follows: 1, through shortening the time of the corner crystal growth stage, the annealing stage comes in advance, and the whole process time is effectively shortened by 2-3 h, and moreover, back diffusion of impurities at the ingoting top can be effectively prevented so as to improve the polycrystalline silicon ingoting quality; 2, as the process time is shortened, the expenditure on electric power and manual labour is reduced, and as a result, the cost of the whole ingoting process is reduced by 5 percent.

Description

technical field [0001] The invention belongs to the field of polysilicon ingot casting, and in particular relates to a polysilicon ingot casting process which shortens the crystal growth time at corners. Background technique [0002] At present, my country has become the world's largest energy production and consumption country, but the per capita energy consumption level is still very low. With the continuous development of the economy and society, my country's energy demand will continue to grow. In response to the current energy shortage, countries around the world are thinking deeply, and are working hard to improve energy efficiency, promote the development and application of renewable energy, and reduce the impact on energy consumption. Reliance on imported oil to enhance energy security. [0003] As one of the important development directions of renewable energy, solar photovoltaic power generation has developed rapidly in recent years, and its proportion is increasin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B33/02C30B29/06
Inventor 谭毅李鹏廷王峰安广野姜大川熊华江黄佳琪
Owner 青岛隆盛晶硅科技有限公司
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